隧穿磁阻传感器研究进展

周子童; 闫韶华; 赵巍胜; 冷群文

doi:10.7498/aps.71.20211883

摘要

传感器作为物联网技术的基石, 在人们的生产生活中发挥着重大作用. 其中, 基于隧穿磁阻效应(tunneling magnetoresistance, TMR)的磁传感器具有灵敏度高、尺寸小、功耗低等优点, 在导航定位、生物医学、电流检测和无损检测等领域具有极大的应用前景. 本综述以TMR传感器技术路线的发展为核心, 囊括了从基本传感单元到三维空间磁场检测, 再到实际应用的多个研究重点. 首先, 介绍了TMR传感器发展历程并阐明其基本工作原理, 讨论了提高单个传感单元磁隧道结输出线性度的方法. 接下来, 详细介绍了传感器的重要电路结构—惠斯通电桥, 以及制备TMR全桥结构的多种工艺方法. 进一步, 从三维空间磁场检测这一市场需求入手, 深入讨论了基于TMR传感器的三维传感结构的设计和制备方法. 同时, 以传感器灵敏度和噪声水平这两大基本性能为切入点, 列举了TMR传感器性能的优化方案. 最后, 本文对TMR传感器的应用展开了详细介绍, 以自旋麦克风, 生物传感器两个新兴应用为例, 对TMR传感器未来在物联网中的发展和应用进行了展望.

关键词:

Abstract

Sensors play an important role in Internet of Things (IoT) industry and account for a rapidly growing market share. Among them, the magnetic sensor based on tunneling magnetoresistance (TMR) effect possesses great potential applications in the fields of biomedical, navigation, positioning, current detection, and non-destructive testing due to its extremely high sensitivity, small device size and low power consumption. In this paper, we focus on the development of TMR sensor technology routes, covering a series of research advances from a sensor transducer to three-dimensional magnetic field detection, and then to the applications. Firstly, we recall the development history of TMR sensors, explain its working principle, and discuss the method to improve the output linearity of single magnetic tunnel junction. Next, we state the Wheatstone-bridge structure, which can inhibit temperature drift in detail and review several methods of fabricating the full bridge of TMR sensors. Furthermore, for the market demand of three-dimensional magnetic field detection, we summarize the methods of designing and fabricating three-dimensional sensing structure of the TMR sensor. At the same time, we list several optimization schemes of TMR sensor performance in terms of sensitivity and noise level. Finally, we discuss two types of emerging applications of TMR sensors in recent years. The TMR sensors can also be used in intelligence healthcare due to their ultra-high sensitivity. In addition, devices from the combination of spin materials and MEMS structure have attracted wide attention, especially, because of the large commercial market of microphones, spin-MEMS microphones utilized TMR techniques will be the next research hotspot in this interdisciplinary field.

Keywords:

作者及机构信息

1.
北京航空航天大学集成电路科学与工程学院, 北京　100191

2.
北京航空航天大学青岛研究院, 北航歌尔微电子研究院, 青岛　266000

通信作者: 赵巍胜, weisheng.zhao@buaa.edu.cn ; 冷群文, lengqw@bhqditi.com

基金项目: 山东省重点研发项目(批准号: 2021CXGC010109)、北京市科技委项目(批准号: Z201100004220002)和国际合作项目(批准号: B16001)资助的课题

Authors and contacts

1.
School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

2.
Institute of Beihang-Goertek Microelectronics, Qingdao Research Institute, Beihang University, Qingdao 266000, China

Corresponding author: Zhao Wei-Sheng, weisheng.zhao@buaa.edu.cn ; Leng Qun-Wen, lengqw@bhqditi.com

Funds: Project supported by the Key Research and Development Program of Shandong Province, China (Grant No. 2021CXGC010109), the Beijing Municipal Science and Technology Project, China (Grant No. Z201100004220002), and the International Collaboration Project, China (Grnat No. B16001)

文章全文 : translate this paragraph

参考文献

[1]	Liu X, Lam K H, Zhu K, Zheng C, Li X, Du Y, Liu C, Pong P W T 2019 IEEE Trans. Magn. 55 1 Google Scholar
[2]	Mohsen A, Al-Mahdawi M, Fouda M M, Oogane M, Ando Y, Fadlullah Z M 2020 ICC 2020-2020 IEEE International Conference on Communications (ICC) Dublin Ireland, 27 July 2020 pp1–6
[3]	Leroy P, Coillot C, Mosser V, Roux A, Chanteur G 2007 Sens. Lett. 5 162 Google Scholar
[4]	Thomson W 1857 Proc. R. Soc. London 8 546
[5]	Baibich M N, Broto J M, Fert A, Van Dau F N, Petroff F, Etienne P, Creuzet G, Friederich A, Chazelas J 1988 Phys. Rev. Lett. 61 2472 Google Scholar
[6]	Binasch G, Grünberg P, Saurenbach F, Zinn W 1989 Phys. Rev. B 39 4828
[7]	Julliere M 1975 Phys. Lett. A 54 225 Google Scholar
[8]	Miyazaki T, Tezuka N 1995 J. Magn. Magn. Mater. 139 L231 Google Scholar
[9]	Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273 Google Scholar
[10]	Parkin S S, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M, Yang S H 2004 Nat. Mater. 3 862 Google Scholar
[11]	Ikeda S, Hayakawa J, Ashizawa Y, Lee Y, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Appl. Phys. Lett. 93 082508 Google Scholar
[12]	Cao Z, Chen W, Lu S, Yan S, Zhang Y, Zhou Z, Yang Y, Li Z, Zhao W, Leng Q 2021 Appl. Phys. Lett. 118 122402 Google Scholar
[13]	Chen W, Yan S, Yang Y, Cao Z, Lin Y, Zhou Z, Yan S, Leng Q 2021 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Chengdu China, 8–11 April 2021 pp1–3
[14]	Tumanski S 2016 Handbook of Magnetic Measurements (CRC Press) pp159–256
[15]	Su D, Wu K, Saha R, Peng C, Wang J P 2020 Micromachines 11 34
[16]	Wang M, Wang Y, Peng L, Ye C 2019 IEEE Sens. J. 19 9610 Google Scholar
[17]	Ichkitidze L, Bazaev N, Telyshev D, Preobrazhensky R, Gavrushina M 2015 Biomed. Eng. 48 305 Google Scholar
[18]	Markevicius V, Navikas D, Zilys M, Andriukaitis D, Valinevicius A, Cepenas M 2016 Sensors 16 78 Google Scholar
[19]	Zhou X 2013 2013 IEEE Sensors Applications Symposium Proceedings Galveston TX USA, 19–21 February 2013 pp80–83
[20]	Rosado L S, Cardoso F A, Cardoso S, Ramos P M, Freitas P P, Piedade M S 2014 Sens. Actuators, A 212 58 Google Scholar
[21]	Sun X, Huang Q, Hou Y, Jiang L, Pong P W 2013 IEEE Trans. Power Delivery 28 2145 Google Scholar
[22]	Jin Z, Mohd Noor Sam M A I, Oogane M, Ando Y 2021 Sensors 21 668 Google Scholar
[23]	Wang C, Su W, Hu Z, Pu J, Guan M, Peng B, Li L, Ren W, Zhou Z, Jiang Z 2018 IEEE Trans. Magn. 54 1 Google Scholar
[24]	Diao Z, Zheng Y, Kaiser C, Jiang X, Chen L, Roy A, Chien C, Wang M, Gider S, Mauri D 2015 2015 IEEE International Magnetics Conference (INTERMAG) Beijing China, 11–15 May 2015 p1
[25]	Liu X, Ren C, Xiao G 2002 J. Appl. Phys. 92 4722 Google Scholar
[26]	Chaves R, Cardoso S, Ferreira R, Freitas P 2011 J. Appl. Phys. 109 07E506 Google Scholar
[27]	Silva A V, Leitao D C, Valadeiro J, Amaral J, Freitas P P, Cardoso S 2015 Eur. Phys. J. :Appl. Phys. 72 10601 Google Scholar
[28]	Wiśniowski P, Almeida J, Cardoso S, Barradas N, Freitas P 2008 J. Appl. Phys. 103 07A910 Google Scholar
[29]	Van Driel J, De Boer F, Lenssen K M, Coehoorn R 2000 J. Appl. Phys. 88 975 Google Scholar
[30]	van Dijken S, Coey J 2005 Appl. Phys. Lett. 87 022504 Google Scholar
[31]	Wei H, Qin Q, Wen Z, Han X, Zhang XG 2009 Appl. Phys. Lett. 94 172902 Google Scholar
[32]	Nakano T, Oogane M, Furuichi T, Ando Y 2017 Appl. Phys. Lett. 110 012401 Google Scholar
[33]	Yuan L, Liou SH, Wang D 2006 Phys. Rev. B 73 134403 Google Scholar
[34]	Reig C, Cardoso S, Mukhopadhyay S C 2013 Smart Sensors, Measurement and Instrumentation (Springer) pp103–131
[35]	Cao J, Freitas P 2010 J. Appl. Phys. 107 09E712 Google Scholar
[36]	Berthold I, Müller M, Klötzer S, Ebert R, Thomas S, Matthes P, Albrecht M, Exner H 2014 Appl. Surf. Sci. 302 159 Google Scholar
[37]	Franco F, Silva M, Cardoso S, Freitas P P 2021 Appl. Phys. Lett. 118 072401 Google Scholar
[38]	Luong V, Jeng J, Lai B, Lu C 2015 2015 IEEE International Magnetics Conference (INTERMAG) Beijing China, 11–15 May 2015 p1
[39]	Freitas P P, Ferreira R, Cardoso S 2016 Proc. IEEE 104 1894 Google Scholar
[40]	Yan S, Cao Z, Guo Z, Zheng Z, Cao A, Qi Y, Leng Q, Zhao W 2018 Sensors 18 1832 Google Scholar
[41]	Cao Z, Wei Y, Chen W, Yan S, Lin L, Li Z, Wang L, Yang H, Leng Q, Zhao W 2021 Sci. China: Inf. Sci. 64 1
[42]	Luong V S, Jeng J T, Lai B L, Hsu J H, Chang C R, Lu C C 2015 IEEE Trans. Magn. 51 4004504 Google Scholar
[43]	Lu C C, Huang J 2015 Sensors 15 14727 Google Scholar
[44]	Cerro G, Ferrigno L, Laracca M, Milano F, Bellitti P, Serpelloni M, Piedrafita O C 2020 2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Dubrovnik Croatia, 25–28 May 2020 pp1–6
[45]	Deak Z J 2015 Association for Sensors and Measurement (AMA) Conferences Nürnberg Germany, 19–21 May 2015 pp245–250
[46]	Chiang C Y, Jeng J T, Lai B L, Luong V S, Lu C C 2015 J. Appl. Phys. 117 17A321 Google Scholar
[47]	Su Y H, Lu C C, Jeng J T, Hsu J H, Liao M H, Wu J C, Lai M H, Chang C R 2017 IEEE Trans. Nanotechnol. 17 11 Google Scholar
[48]	Yan S, Zhou Z, Cao Z, Yang Y, Li Z, Chen W, Leng Q, Zhao W 2021 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Chengdu China, 8–11 April 2021 pp1–3
[49]	Li R, Zhang S, Luo S, Guo Z, Xu Y, Ouyang J, Song M, Zou Q, Xi L, Yang X 2021 Nat. Electron. 4 179 Google Scholar
[50]	TDK 2020 TDK Product Catalog [EB/OL]
[51]	Lee Y, Hayakawa J, Ikeda S, Matsukura F, Ohno H 2007 Appl. Phys. Lett. 90 212507 Google Scholar
[52]	Almeida J, Freitas P 2009 J. Appl. Phys. 105 07E722 Google Scholar
[53]	Orgassa D, Fujiwara H, Schulthess T, Butler W 1999 Phys. Rev. B 60 13237 Google Scholar
[54]	Tezuka N, Ikeda N, Mitsuhashi F, Sugimoto S 2009 Appl. Phys. Lett. 94 162504 Google Scholar
[55]	Fujiwara K, Oogane M, Yokota S, Nishikawa T, Naganuma H, Ando Y 2012 J. Appl. Phys. 111 07C710 Google Scholar
[56]	Lei Z, Li G, Egelhoff W F, Lai P, Pong P W 2011 IEEE Trans. Magn. 47 602 Google Scholar
[57]	Nyquist H 1928 Phys. Rev. 32 110 Google Scholar
[58]	Johnson J B 1928 Phys. Rev. 32 97 Google Scholar
[59]	Ingvarsson S, Xiao G, Parkin S, Gallagher W, Grinstein G, Koch R 2000 Phys. Rev. Lett. 85 3289 Google Scholar
[60]	Smith N, Arnett P 2001 Appl. Phys. Lett. 78 1448 Google Scholar
[61]	Egelhoff Jr W, Pong P, Unguris J, McMichael R, Nowak E, Edelstein A, Burnette J, Fischer G 2009 Sens. Actuators, A 155 217 Google Scholar
[62]	Freitas P, Ferreira R, Cardoso S, Cardoso F 2007 J. Phys.: Condens. Matter 19 165221 Google Scholar
[63]	Nowak E, Weissman M, Parkin S 1999 Appl. Phys. Lett. 74 600 Google Scholar
[64]	Almeida J, Wisniowski P, Freitas P 2008 IEEE Trans. Magn. 44 2569 Google Scholar
[65]	Liou S H, Zhang R, Russek S E, Yuan L, Halloran S T, Pappas D P 2008 J. Appl. Phys. 103 07E920 Google Scholar
[66]	Kandiah K, Whiting F 1978 Solid·State Electron. 21 1079
[67]	Xi H, Loven J, Netzer R, Guzman J I, Franzen S, Mao S 2006 J. Phys. D: Appl. Phys. 39 2024 Google Scholar
[68]	Polovy H, Guerrero R, Scola J, Pannetier-Lecoeur M, Fermon C, Feng G, Fahy K, Cardoso S, Almeida J, Freitas P 2010 J. Magn. Magn. Mater. 322 1624 Google Scholar
[69]	Torrejon J, Solignac A, Chopin C, Moulin J, Doll A, Paul E, Fermon C, Pannetier-Lecoeur M 2020 Phys. Rev. Appl. 13 034031 Google Scholar
[70]	Garzon S, Chen Y, Webb R A 2007 Physica E (Amsterdam, Neth. ) 40 133
[71]	Fermon C, Pannetier-Lecoeur M 2013 Giant Magnetoresistance (GMR) Sensors (Springer) pp47–70
[72]	Wisniowski P, Almeida J M, Freitas P P 2008 IEEE Trans. Magn. 44 2551 Google Scholar
[73]	Deak J G, Zhou Z, Shen W 2017 AIP Adv. 7 056676 Google Scholar
[74]	Moulin J, Doll A, Paul E, Pannetier-Lecoeur M, Fermon C, Sergeeva-Chollet N, Solignac A 2019 Appl. Phys. Lett. 115 122406 Google Scholar
[75]	Huang L, Yuan Z, Tao B, Wan C, Guo P, Zhang Q, Yin L, Feng J, Nakano T, Naganuma H 2017 J. Appl. Phys. 122 113903 Google Scholar
[76]	Cui Y, Khodadadi B, Schäfer S, Mewes T, Lu J, Wolf S A 2013 Appl. Phys. Lett. 102 162403 Google Scholar
[77]	Valadeiro J P, Amaral J, Leitao D C, Ferreira R, Cardoso S F, Freitas P J 2015 IEEE Trans. Magn. 51 4400204 Google Scholar
[78]	Tondra M, Daughton J M, Wang D, Beech R S, Fink A, Taylor J A 1998 J. Appl. Phys. 83 6688 Google Scholar
[79]	Guerrero R, Pannetier-Lecoeur M, Fermon C, Cardoso S, Ferreira R, Freitas P 2009 J. Appl. Phys. 105 113922 Google Scholar
[80]	Edelstein A S, Fischer G A 2002 J. Appl. Phys. 91 7795 Google Scholar
[81]	Edelstein A, Fischer G, Pedersen M, Nowak E, Cheng S F, Nordman C 2006 J. Appl. Phys. 99 08B317 Google Scholar
[82]	Guedes A, Jaramillo G, Buffa C, Vigevani G, Cardoso S, Leitao D, Freitas P, Horsley D 2012 IEEE Trans. Magn. 48 4115 Google Scholar
[83]	Hu J, Pan M, Tian W, Chen D, Zhao J, Luo F 2012 Appl. Phys. Lett. 100 244102 Google Scholar
[84]	Hu J, Pan M, Tian W, Chen D, Zhao J 2012 Rev. Sci. Instrum. 83 055009 Google Scholar
[85]	Du Q, Hu J, Sun K, Chen D, Pan L, Che Y, Zhang X, Li P, Zhang B, Peng J 2019 IEEE Electron Device Lett. 40 1824 Google Scholar
[86]	Hu J, Du Q, Pan M, Li P, Sun K, Wang W, Zhang J, Peng J, Qiu W, Chen D 2020 2020 IEEE Sensors Rotterdam Netherlands, October 25–28, 2020 pp1–4
[87]	Zhang J, Pan M, Du Q, Hu J, Sun K, Yu Y, Zhang X, Luo H 2021 Micromachines 12 722 Google Scholar
[88]	Liu Z, Chen J, Zou X 2021 Sensors 21 87
[89]	Pan L, Pan M, Hu J, Hu Y, Che Y, Yu Y, Wang N, Qiu W, Li P, Peng J 2020 Sensors 20 1440 Google Scholar
[90]	Che Y, Hu J, Pan L, Li P, Pan M, Chen D, Sun K, Zhang X, Du Q, Yu Y 2020 AIP Adv. 10 105032 Google Scholar
[91]	Zheng C, Zhu K, De Freitas S C, Chang J Y, Davies J E, Eames P, Freitas P P, Kazakova O, Kim C, Leung C W 2019 IEEE Trans. Magn. 55 0800130 Google Scholar
[92]	Song D, Nowak J, Larson R, Kolbo P, Chellew R 2000 IEEE Trans. Magn. 36 2545 Google Scholar
[93]	Vopsaroiu M, Blackburn J, Cain M G 2007 J. Phys. D:Appl. Phys. 40 5027 Google Scholar
[94]	Hayakawa J, Ikeda S, Lee Y M, Sasaki R, Meguro T, Matsukura F, Takahashi H, Ohno H 2005 Jpn. J. Appl. Phys. 44 L1267 Google Scholar
[95]	Diao Z, Apalkov D, Pakala M, Ding Y, Panchula A, Huai Y 2005 Appl. Phys. Lett. 87 232502 Google Scholar
[96]	Aurelio D, Torres L, Finocchio G 2009 J. Magn. Magn. Mater. 321 3913 Google Scholar
[97]	Jeng J T, Lu C C, Hsu H Y 2017 Measurement 109 297 Google Scholar
[98]	Deak J, Jin I 2019 IEEE Trans. Magn. 55 6700104 Google Scholar
[99]	Hainz S, de la Torre E, Guettinger J 2021 AmE 2021-Automotive Meets Electronics; 12th GMM-Symposium online, March 10–11, 2021 pp1–4
[100]	Rohrmann K, Sandner M, Meier P, Prochaska M 2018 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Houston TX USA, May 14–17, 2018 pp1–6
[101]	Guo D, Cardoso F, Ferreira R, Paz E, Cardoso S, Freitas P 2014 J. Appl. Phys. 115 17E513 Google Scholar
[102]	Lawrence D, Donnal J S, Leeb S 2016 IEEE Sens. J. 16 6095 Google Scholar
[103]	Simmons L P, Welsh J S 2013 5th International Conference on Computational Intelligence, Modelling and Simulation Seoul Korea (South), September 24–25, 2013 pp69–74
[104]	Sedaghat S B, Ganji B A 2019 Microsyst. Technol. 25 217 Google Scholar
[105]	Fuji Y, Hara M, Higashi Y, Kaji S, Masunishi K, Nagata T, Yuzawa A, Otsu K, Okamoto K, Baba S 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Kaohsiung Taiwan, June 18–22, 2017 pp63–66
[106]	Higashi Y, Fuji Y, Kaji S, Masunishi K, Nagata T, Yuzawa A, Otsu K, Okamoto K, Baba S, Ono T 2018 IEEE Micro Electro Mechanical Systems (MEMS) Belfast UK, January 21–25, 2018 pp1060–1063
[107]	Fuji Y, Higashi Y, Kaji S, Masunishi K, Yuzawa A, Nagata T, Okamoto K, Baba S, Ono T, Hara M 2018 IEEE International Electron Devices Meeting (IEDM) San Francisco CA USA, December 1–5, 2018 pp4.2.1–4.2. 4
[108]	Bermúdez G S C, Fuchs H, Bischoff L, Fassbender J r, Makarov D 2018 Nat. Electron. 1 589 Google Scholar
[109]	Tanwear A, Liang X, Liu Y, Vuckovic A, Ghannam R, Böhnert T, Paz E, Freitas P P, Ferreira R, Heidari H 2020 IEEE Trans. Biomed. Circuits Syst. 14 1299 Google Scholar
[110]	Fujiwara K, Oogane M, Kanno A, Imada M, Jono J, Terauchi T, Okuno T, Aritomi Y, Morikawa M, Tsuchida M 2018 Appl. Phys. Express 11 023001 Google Scholar
[111]	Hajba L, Guttman A 2016 Biotechnol. Adv. 34 354 Google Scholar
[112]	Liu W J, Ou S L, Chang Y H, Chen Y T, Liang Y C, Chang C Y, Chu C L, Wu T H 2021 Surf. Eng. 37 429 Google Scholar
[113]	Kim K, Hall D A, Yao C, Lee J R, Ooi C C, Bechstein D J, Guo Y, Wang S X 2018 Sci. Rep. 8 1

施引文献

图 1 磁隧道结　(a) 膜层示意图; (b) R-H曲线图

Fig. 1. Magnetic tunnel junction: (a) Schematic diagram of the MTJ stacks; (b) R-H loop curve.

下载: 全尺寸图片幻灯片

图 2 TMR传感器的图形化工艺流程图

Fig. 2. Flow chart of pattern process of TMR sensors.

下载: 全尺寸图片幻灯片

图 3 线性化方案图示　(a) 外加偏置场结构; (b) 强形状各向异性结构; (c) 双钉扎结构; (d) 交叉易磁化轴结构

Fig. 3. Linearization scheme diagram: (a) MTJ junction with bias field; (b) MTJ junction with strong shape anisotropic; (c) MTJ junction of double pinning; (d) MTJ junction with linear perpendicular magnetic anisotropy.

下载: 全尺寸图片幻灯片

图 4 惠斯通电桥结构示意图

Fig. 4. Schematic diagram of the Wheatstone-bridge structure

下载: 全尺寸图片幻灯片

图 5 惠斯通全桥制备方法　(a) 机械组装式; (b) 局部退火式; (c) 分区域光刻式; (d) 后退火式

Fig. 5. Wheatstone bridge manufacturing method: (a) Mechanical assembly; (b) local annealing; (c) divide different areas for photolithography; (d) annealing after pattern process.

下载: 全尺寸图片幻灯片

图 6 组装式三维TMR传感器　(a)传感器结构示意图; (b)带软磁管降噪的三维结构^[38]

Fig. 6. Assembled three-dimensional TMR sensor: (a) Schematic diagram of sensor structure; (b) three-dimensional structure with soft magnetic tube for noise reduction^[38].

下载: 全尺寸图片幻灯片

图 7 带磁通控制器的三维磁阻式传感器　(a) 传感器结构示意图^[42]; (b) 磁通控制器对于Z轴磁场磁通量的影响^[43]

Fig. 7. Three-dimensional TMR sensor with flux guides: (a) Schematic diagram of sensor structure^[42]; (b) effect of flux guides on magnetic flux of Z-axis magnetic field^[43].

下载: 全尺寸图片幻灯片

图 8 传感器后端基本电路结构图

Fig. 8. Basic back-end circuit diagram of sensor.

下载: 全尺寸图片幻灯片

图 9 磁通聚集器的结构图以及周围磁通量分布情况^[52]　(a) 光学显微镜下磁通聚集器和磁隧道结; (b) 磁通聚集器两端的模拟磁通量浓度; (c) 模拟磁通量浓度区域放大图

Fig. 9. The structure diagram of the magnetic flux concentrator and the surrounding magnetic flux distribution^[52]: (a) Magnetic flux concentrator and magnetic tunnel junction under light microscope; (b) simulated magnetic flux concentrations at both ends of the flux concentrator; (c) enlarged image of simulated magnetic flux concentration area.

下载: 全尺寸图片幻灯片

图 10 噪声功率谱密度曲线　(a) 热噪声和1/f噪声功率谱密度曲线; (b) RTN噪声功率谱密度曲线^[69]

Fig. 10. Noise power spectral density curve: (a) Power spectral density curves of thermal noise and 1/ f noise; (b) RTN noise power spectral density curve^[69].

下载: 全尺寸图片幻灯片

图 11 通过串并联MTJ来降低噪声的方法

Fig. 11. Noise is reduced by series and parallel MTJ.

下载: 全尺寸图片幻灯片

图 12 水平运动磁通聚集器原理图^[81]

Fig. 12. Schematic diagram of horizontal motion flux concentrator^[81].

下载: 全尺寸图片幻灯片

图 13 垂直运动磁通聚集器原理图^[83]　(a) 磁通调制膜靠近间隙; (b) 远离间隙

Fig. 13. Schematic diagram of vertical motion flux concentrator^[83]: (a) The state of flux modulated film close to the air gap; (b) the state of flux modulated film far away from the air gap.

下载: 全尺寸图片幻灯片

图 14 电调制磁通聚集器原理图^[89]　(a) 电调制磁通聚集器结构图; (b) 电压为0时的磁通分布; (c) 电压为V_i时的磁通分布; (d) 磁通调制膜的磁导率和空气间隙中的磁通量随着电压发生周期性变化

Fig. 14. Schematic diagram of magnetic flux electric modulation^[89]: (a) Structure diagram of MFEM; (b) the magnetic flux distribution at voltage = 0; (c) the magnetic flux distribution at voltage = V_i; (d) the permeability of the FXF and the magnetic flux in the air gap change periodically with the voltage.

下载: 全尺寸图片幻灯片

图 15 自旋-MEMS麦克风^[106]　(a) 原理图; (b) 版图结构

Fig. 15. Spin-MEMS microphone^[106]: (a) Schematic diagram; (b) physical structure.

下载: 全尺寸图片幻灯片

图 16 集成TMR传感器的可穿戴眼动仪工作原理^[109]

Fig. 16. Working principle diagram of wearable eye tracker integrated with TMR sensor^[109].

下载: 全尺寸图片幻灯片

图 17 TMR传感器在心磁图和脑磁图测试中的应用^[110]　(a) 心磁场测试原理图; (b) 脑磁场测试原理图

Fig. 17. Application of TMR sensor in magnetocardiogram and magnetoencephalography testing^[110]: (a) Schematic diagram of magnetocardiogram testing; (b) schematic diagram of magnetoencephalography testing.

下载: 全尺寸图片幻灯片

表 1 不同磁传感器技术性能对比^[14]

Table 1. Performance comparison of different magnetic sensor technologies^[14].

	HALL	AMR	GMR	TMR
物理效应	霍尔效应	各向异性磁阻效应	巨磁阻效应	隧穿磁阻效应
感应方向	垂直	面内	面内	面内/垂直
最大磁阻率/%	—	2.0^[23]	24^[24]	604^[10,11]
磁场探测范围/T	10^–3—10	10^–9—10^–3	10^–5—10⁴	10^–12—10
退火温度/℃	—	—	220—280	280—340
磁场灵敏度/(mV·V^–¹·Oe^–1)	~0.05	~1	~3	~100
噪声指数/(nT·Hz^–1/2)@1 Hz	>100	0.1—10	1—10	0.01~10
功耗/mA	5—10	1—10	1—10	0.001—0.1
芯片尺寸/mm²	~1×1	~1×1	~0.5×0.5	~0.5×0.5

下载: 导出CSV

map

[1]	Liu X, Lam K H, Zhu K, Zheng C, Li X, Du Y, Liu C, Pong P W T 2019 IEEE Trans. Magn. 55 1 Google Scholar
[2]	Mohsen A, Al-Mahdawi M, Fouda M M, Oogane M, Ando Y, Fadlullah Z M 2020 ICC 2020-2020 IEEE International Conference on Communications (ICC) Dublin Ireland, 27 July 2020 pp1–6
[3]	Leroy P, Coillot C, Mosser V, Roux A, Chanteur G 2007 Sens. Lett. 5 162 Google Scholar
[4]	Thomson W 1857 Proc. R. Soc. London 8 546
[5]	Baibich M N, Broto J M, Fert A, Van Dau F N, Petroff F, Etienne P, Creuzet G, Friederich A, Chazelas J 1988 Phys. Rev. Lett. 61 2472 Google Scholar
[6]	Binasch G, Grünberg P, Saurenbach F, Zinn W 1989 Phys. Rev. B 39 4828
[7]	Julliere M 1975 Phys. Lett. A 54 225 Google Scholar
[8]	Miyazaki T, Tezuka N 1995 J. Magn. Magn. Mater. 139 L231 Google Scholar
[9]	Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273 Google Scholar
[10]	Parkin S S, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M, Yang S H 2004 Nat. Mater. 3 862 Google Scholar
[11]	Ikeda S, Hayakawa J, Ashizawa Y, Lee Y, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Appl. Phys. Lett. 93 082508 Google Scholar
[12]	Cao Z, Chen W, Lu S, Yan S, Zhang Y, Zhou Z, Yang Y, Li Z, Zhao W, Leng Q 2021 Appl. Phys. Lett. 118 122402 Google Scholar
[13]	Chen W, Yan S, Yang Y, Cao Z, Lin Y, Zhou Z, Yan S, Leng Q 2021 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Chengdu China, 8–11 April 2021 pp1–3
[14]	Tumanski S 2016 Handbook of Magnetic Measurements (CRC Press) pp159–256
[15]	Su D, Wu K, Saha R, Peng C, Wang J P 2020 Micromachines 11 34
[16]	Wang M, Wang Y, Peng L, Ye C 2019 IEEE Sens. J. 19 9610 Google Scholar
[17]	Ichkitidze L, Bazaev N, Telyshev D, Preobrazhensky R, Gavrushina M 2015 Biomed. Eng. 48 305 Google Scholar
[18]	Markevicius V, Navikas D, Zilys M, Andriukaitis D, Valinevicius A, Cepenas M 2016 Sensors 16 78 Google Scholar
[19]	Zhou X 2013 2013 IEEE Sensors Applications Symposium Proceedings Galveston TX USA, 19–21 February 2013 pp80–83
[20]	Rosado L S, Cardoso F A, Cardoso S, Ramos P M, Freitas P P, Piedade M S 2014 Sens. Actuators, A 212 58 Google Scholar
[21]	Sun X, Huang Q, Hou Y, Jiang L, Pong P W 2013 IEEE Trans. Power Delivery 28 2145 Google Scholar
[22]	Jin Z, Mohd Noor Sam M A I, Oogane M, Ando Y 2021 Sensors 21 668 Google Scholar
[23]	Wang C, Su W, Hu Z, Pu J, Guan M, Peng B, Li L, Ren W, Zhou Z, Jiang Z 2018 IEEE Trans. Magn. 54 1 Google Scholar
[24]	Diao Z, Zheng Y, Kaiser C, Jiang X, Chen L, Roy A, Chien C, Wang M, Gider S, Mauri D 2015 2015 IEEE International Magnetics Conference (INTERMAG) Beijing China, 11–15 May 2015 p1
[25]	Liu X, Ren C, Xiao G 2002 J. Appl. Phys. 92 4722 Google Scholar
[26]	Chaves R, Cardoso S, Ferreira R, Freitas P 2011 J. Appl. Phys. 109 07E506 Google Scholar
[27]	Silva A V, Leitao D C, Valadeiro J, Amaral J, Freitas P P, Cardoso S 2015 Eur. Phys. J. :Appl. Phys. 72 10601 Google Scholar
[28]	Wiśniowski P, Almeida J, Cardoso S, Barradas N, Freitas P 2008 J. Appl. Phys. 103 07A910 Google Scholar
[29]	Van Driel J, De Boer F, Lenssen K M, Coehoorn R 2000 J. Appl. Phys. 88 975 Google Scholar
[30]	van Dijken S, Coey J 2005 Appl. Phys. Lett. 87 022504 Google Scholar
[31]	Wei H, Qin Q, Wen Z, Han X, Zhang XG 2009 Appl. Phys. Lett. 94 172902 Google Scholar
[32]	Nakano T, Oogane M, Furuichi T, Ando Y 2017 Appl. Phys. Lett. 110 012401 Google Scholar
[33]	Yuan L, Liou SH, Wang D 2006 Phys. Rev. B 73 134403 Google Scholar
[34]	Reig C, Cardoso S, Mukhopadhyay S C 2013 Smart Sensors, Measurement and Instrumentation (Springer) pp103–131
[35]	Cao J, Freitas P 2010 J. Appl. Phys. 107 09E712 Google Scholar
[36]	Berthold I, Müller M, Klötzer S, Ebert R, Thomas S, Matthes P, Albrecht M, Exner H 2014 Appl. Surf. Sci. 302 159 Google Scholar
[37]	Franco F, Silva M, Cardoso S, Freitas P P 2021 Appl. Phys. Lett. 118 072401 Google Scholar
[38]	Luong V, Jeng J, Lai B, Lu C 2015 2015 IEEE International Magnetics Conference (INTERMAG) Beijing China, 11–15 May 2015 p1
[39]	Freitas P P, Ferreira R, Cardoso S 2016 Proc. IEEE 104 1894 Google Scholar
[40]	Yan S, Cao Z, Guo Z, Zheng Z, Cao A, Qi Y, Leng Q, Zhao W 2018 Sensors 18 1832 Google Scholar
[41]	Cao Z, Wei Y, Chen W, Yan S, Lin L, Li Z, Wang L, Yang H, Leng Q, Zhao W 2021 Sci. China: Inf. Sci. 64 1
[42]	Luong V S, Jeng J T, Lai B L, Hsu J H, Chang C R, Lu C C 2015 IEEE Trans. Magn. 51 4004504 Google Scholar
[43]	Lu C C, Huang J 2015 Sensors 15 14727 Google Scholar
[44]	Cerro G, Ferrigno L, Laracca M, Milano F, Bellitti P, Serpelloni M, Piedrafita O C 2020 2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Dubrovnik Croatia, 25–28 May 2020 pp1–6
[45]	Deak Z J 2015 Association for Sensors and Measurement (AMA) Conferences Nürnberg Germany, 19–21 May 2015 pp245–250
[46]	Chiang C Y, Jeng J T, Lai B L, Luong V S, Lu C C 2015 J. Appl. Phys. 117 17A321 Google Scholar
[47]	Su Y H, Lu C C, Jeng J T, Hsu J H, Liao M H, Wu J C, Lai M H, Chang C R 2017 IEEE Trans. Nanotechnol. 17 11 Google Scholar
[48]	Yan S, Zhou Z, Cao Z, Yang Y, Li Z, Chen W, Leng Q, Zhao W 2021 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Chengdu China, 8–11 April 2021 pp1–3
[49]	Li R, Zhang S, Luo S, Guo Z, Xu Y, Ouyang J, Song M, Zou Q, Xi L, Yang X 2021 Nat. Electron. 4 179 Google Scholar
[50]	TDK 2020 TDK Product Catalog [EB/OL]
[51]	Lee Y, Hayakawa J, Ikeda S, Matsukura F, Ohno H 2007 Appl. Phys. Lett. 90 212507 Google Scholar
[52]	Almeida J, Freitas P 2009 J. Appl. Phys. 105 07E722 Google Scholar
[53]	Orgassa D, Fujiwara H, Schulthess T, Butler W 1999 Phys. Rev. B 60 13237 Google Scholar
[54]	Tezuka N, Ikeda N, Mitsuhashi F, Sugimoto S 2009 Appl. Phys. Lett. 94 162504 Google Scholar
[55]	Fujiwara K, Oogane M, Yokota S, Nishikawa T, Naganuma H, Ando Y 2012 J. Appl. Phys. 111 07C710 Google Scholar
[56]	Lei Z, Li G, Egelhoff W F, Lai P, Pong P W 2011 IEEE Trans. Magn. 47 602 Google Scholar
[57]	Nyquist H 1928 Phys. Rev. 32 110 Google Scholar
[58]	Johnson J B 1928 Phys. Rev. 32 97 Google Scholar
[59]	Ingvarsson S, Xiao G, Parkin S, Gallagher W, Grinstein G, Koch R 2000 Phys. Rev. Lett. 85 3289 Google Scholar
[60]	Smith N, Arnett P 2001 Appl. Phys. Lett. 78 1448 Google Scholar
[61]	Egelhoff Jr W, Pong P, Unguris J, McMichael R, Nowak E, Edelstein A, Burnette J, Fischer G 2009 Sens. Actuators, A 155 217 Google Scholar
[62]	Freitas P, Ferreira R, Cardoso S, Cardoso F 2007 J. Phys.: Condens. Matter 19 165221 Google Scholar
[63]	Nowak E, Weissman M, Parkin S 1999 Appl. Phys. Lett. 74 600 Google Scholar
[64]	Almeida J, Wisniowski P, Freitas P 2008 IEEE Trans. Magn. 44 2569 Google Scholar
[65]	Liou S H, Zhang R, Russek S E, Yuan L, Halloran S T, Pappas D P 2008 J. Appl. Phys. 103 07E920 Google Scholar
[66]	Kandiah K, Whiting F 1978 Solid·State Electron. 21 1079
[67]	Xi H, Loven J, Netzer R, Guzman J I, Franzen S, Mao S 2006 J. Phys. D: Appl. Phys. 39 2024 Google Scholar
[68]	Polovy H, Guerrero R, Scola J, Pannetier-Lecoeur M, Fermon C, Feng G, Fahy K, Cardoso S, Almeida J, Freitas P 2010 J. Magn. Magn. Mater. 322 1624 Google Scholar
[69]	Torrejon J, Solignac A, Chopin C, Moulin J, Doll A, Paul E, Fermon C, Pannetier-Lecoeur M 2020 Phys. Rev. Appl. 13 034031 Google Scholar
[70]	Garzon S, Chen Y, Webb R A 2007 Physica E (Amsterdam, Neth. ) 40 133
[71]	Fermon C, Pannetier-Lecoeur M 2013 Giant Magnetoresistance (GMR) Sensors (Springer) pp47–70
[72]	Wisniowski P, Almeida J M, Freitas P P 2008 IEEE Trans. Magn. 44 2551 Google Scholar
[73]	Deak J G, Zhou Z, Shen W 2017 AIP Adv. 7 056676 Google Scholar
[74]	Moulin J, Doll A, Paul E, Pannetier-Lecoeur M, Fermon C, Sergeeva-Chollet N, Solignac A 2019 Appl. Phys. Lett. 115 122406 Google Scholar
[75]	Huang L, Yuan Z, Tao B, Wan C, Guo P, Zhang Q, Yin L, Feng J, Nakano T, Naganuma H 2017 J. Appl. Phys. 122 113903 Google Scholar
[76]	Cui Y, Khodadadi B, Schäfer S, Mewes T, Lu J, Wolf S A 2013 Appl. Phys. Lett. 102 162403 Google Scholar
[77]	Valadeiro J P, Amaral J, Leitao D C, Ferreira R, Cardoso S F, Freitas P J 2015 IEEE Trans. Magn. 51 4400204 Google Scholar
[78]	Tondra M, Daughton J M, Wang D, Beech R S, Fink A, Taylor J A 1998 J. Appl. Phys. 83 6688 Google Scholar
[79]	Guerrero R, Pannetier-Lecoeur M, Fermon C, Cardoso S, Ferreira R, Freitas P 2009 J. Appl. Phys. 105 113922 Google Scholar
[80]	Edelstein A S, Fischer G A 2002 J. Appl. Phys. 91 7795 Google Scholar
[81]	Edelstein A, Fischer G, Pedersen M, Nowak E, Cheng S F, Nordman C 2006 J. Appl. Phys. 99 08B317 Google Scholar
[82]	Guedes A, Jaramillo G, Buffa C, Vigevani G, Cardoso S, Leitao D, Freitas P, Horsley D 2012 IEEE Trans. Magn. 48 4115 Google Scholar
[83]	Hu J, Pan M, Tian W, Chen D, Zhao J, Luo F 2012 Appl. Phys. Lett. 100 244102 Google Scholar
[84]	Hu J, Pan M, Tian W, Chen D, Zhao J 2012 Rev. Sci. Instrum. 83 055009 Google Scholar
[85]	Du Q, Hu J, Sun K, Chen D, Pan L, Che Y, Zhang X, Li P, Zhang B, Peng J 2019 IEEE Electron Device Lett. 40 1824 Google Scholar
[86]	Hu J, Du Q, Pan M, Li P, Sun K, Wang W, Zhang J, Peng J, Qiu W, Chen D 2020 2020 IEEE Sensors Rotterdam Netherlands, October 25–28, 2020 pp1–4
[87]	Zhang J, Pan M, Du Q, Hu J, Sun K, Yu Y, Zhang X, Luo H 2021 Micromachines 12 722 Google Scholar
[88]	Liu Z, Chen J, Zou X 2021 Sensors 21 87
[89]	Pan L, Pan M, Hu J, Hu Y, Che Y, Yu Y, Wang N, Qiu W, Li P, Peng J 2020 Sensors 20 1440 Google Scholar
[90]	Che Y, Hu J, Pan L, Li P, Pan M, Chen D, Sun K, Zhang X, Du Q, Yu Y 2020 AIP Adv. 10 105032 Google Scholar
[91]	Zheng C, Zhu K, De Freitas S C, Chang J Y, Davies J E, Eames P, Freitas P P, Kazakova O, Kim C, Leung C W 2019 IEEE Trans. Magn. 55 0800130 Google Scholar
[92]	Song D, Nowak J, Larson R, Kolbo P, Chellew R 2000 IEEE Trans. Magn. 36 2545 Google Scholar
[93]	Vopsaroiu M, Blackburn J, Cain M G 2007 J. Phys. D:Appl. Phys. 40 5027 Google Scholar
[94]	Hayakawa J, Ikeda S, Lee Y M, Sasaki R, Meguro T, Matsukura F, Takahashi H, Ohno H 2005 Jpn. J. Appl. Phys. 44 L1267 Google Scholar
[95]	Diao Z, Apalkov D, Pakala M, Ding Y, Panchula A, Huai Y 2005 Appl. Phys. Lett. 87 232502 Google Scholar
[96]	Aurelio D, Torres L, Finocchio G 2009 J. Magn. Magn. Mater. 321 3913 Google Scholar
[97]	Jeng J T, Lu C C, Hsu H Y 2017 Measurement 109 297 Google Scholar
[98]	Deak J, Jin I 2019 IEEE Trans. Magn. 55 6700104 Google Scholar
[99]	Hainz S, de la Torre E, Guettinger J 2021 AmE 2021-Automotive Meets Electronics; 12th GMM-Symposium online, March 10–11, 2021 pp1–4
[100]	Rohrmann K, Sandner M, Meier P, Prochaska M 2018 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Houston TX USA, May 14–17, 2018 pp1–6
[101]	Guo D, Cardoso F, Ferreira R, Paz E, Cardoso S, Freitas P 2014 J. Appl. Phys. 115 17E513 Google Scholar
[102]	Lawrence D, Donnal J S, Leeb S 2016 IEEE Sens. J. 16 6095 Google Scholar
[103]	Simmons L P, Welsh J S 2013 5th International Conference on Computational Intelligence, Modelling and Simulation Seoul Korea (South), September 24–25, 2013 pp69–74
[104]	Sedaghat S B, Ganji B A 2019 Microsyst. Technol. 25 217 Google Scholar
[105]	Fuji Y, Hara M, Higashi Y, Kaji S, Masunishi K, Nagata T, Yuzawa A, Otsu K, Okamoto K, Baba S 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Kaohsiung Taiwan, June 18–22, 2017 pp63–66
[106]	Higashi Y, Fuji Y, Kaji S, Masunishi K, Nagata T, Yuzawa A, Otsu K, Okamoto K, Baba S, Ono T 2018 IEEE Micro Electro Mechanical Systems (MEMS) Belfast UK, January 21–25, 2018 pp1060–1063
[107]	Fuji Y, Higashi Y, Kaji S, Masunishi K, Yuzawa A, Nagata T, Okamoto K, Baba S, Ono T, Hara M 2018 IEEE International Electron Devices Meeting (IEDM) San Francisco CA USA, December 1–5, 2018 pp4.2.1–4.2. 4
[108]	Bermúdez G S C, Fuchs H, Bischoff L, Fassbender J r, Makarov D 2018 Nat. Electron. 1 589 Google Scholar
[109]	Tanwear A, Liang X, Liu Y, Vuckovic A, Ghannam R, Böhnert T, Paz E, Freitas P P, Ferreira R, Heidari H 2020 IEEE Trans. Biomed. Circuits Syst. 14 1299 Google Scholar
[110]	Fujiwara K, Oogane M, Kanno A, Imada M, Jono J, Terauchi T, Okuno T, Aritomi Y, Morikawa M, Tsuchida M 2018 Appl. Phys. Express 11 023001 Google Scholar
[111]	Hajba L, Guttman A 2016 Biotechnol. Adv. 34 354 Google Scholar
[112]	Liu W J, Ou S L, Chang Y H, Chen Y T, Liang Y C, Chang C Y, Chu C L, Wu T H 2021 Surf. Eng. 37 429 Google Scholar
[113]	Kim K, Hall D A, Yao C, Lee J R, Ooi C C, Bechstein D J, Guo Y, Wang S X 2018 Sci. Rep. 8 1

[1]	程奥迪, 余辉洋, 汪辰涛, 范梓阳, 张佳琪, 吴可滢, 黄见秋. 基于PVDF-EtP纳米纤维膜的压电性能研究及其在压力传感器中的应用. , 2025, 74(7): . doi: 10.7498/aps.74.20241680
[2]	高裕昆, 赵洁, 周晶晶, 周静. 压电纤维复合材料智能传感器的有限元预测与器件性能. , 2025, 74(5): 057701. doi: 10.7498/aps.74.20241379
[3]	温涛, 马宇航, 王德全, 谌浩然, 李艳芳, 许洋, 王志广. 基于巨磁阻抗效应的双模态型低噪声大量程磁传感器. , 2025, 74(3): 038501. doi: 10.7498/aps.74.20241498
[4]	葛一璇, 于婷婷, 梁文杰. 原位合成方法制备超灵敏和高特异性的微型氢气传感器. , 2024, 73(2): 020701. doi: 10.7498/aps.73.20231265
[5]	张嘉伟, 姚鸿博, 张远征, 蒋伟博, 吴永辉, 张亚菊, 敖天勇, 郑海务. 通过机器学习实现基于摩擦纳米发电机的自驱动智能传感及其应用. , 2022, 71(7): 078702. doi: 10.7498/aps.71.20211632
[6]	吴健, 韩文, 程珍珍, 杨彬, 孙利利, 王迪, 朱程鹏, 张勇, 耿明昕, 景龑. 基于流体模型的碳纳米管电离式传感器的结构优化方法. , 2021, 70(9): 090701. doi: 10.7498/aps.70.20201828
[7]	罗实, 魏大鹏, 魏大程. 二维材料在生物传感器中的应用. , 2021, 70(6): 064701. doi: 10.7498/aps.70.20201613
[8]	侯星宇, 郭传飞. 柔性压力传感器的原理及应用. , 2020, 69(17): 178102. doi: 10.7498/aps.69.20200987
[9]	潮兴兵, 潘鲁平, 王子圣, 杨锋涛, 丁剑平. 图像传感器像素化效应对菲涅耳非相干关联全息分辨率的影响. , 2019, 68(6): 064203. doi: 10.7498/aps.68.20181844
[10]	乔学光, 邵志华, 包维佳, 荣强周. 光纤超声传感器及应用研究进展. , 2017, 66(7): 074205. doi: 10.7498/aps.66.074205
[11]	曹江伟, 王锐, 王颖, 白建民, 魏福林. 隧穿磁电阻效应磁场传感器中低频噪声的测量与研究. , 2016, 65(5): 057501. doi: 10.7498/aps.65.057501
[12]	孙小亮, 陈长虹, 孟德佳, 冯士高, 于洪浩. 复合金属光栅模式分离与高性能气体传感器应用. , 2015, 64(14): 147302. doi: 10.7498/aps.64.147302
[13]	宋佳, 罗清华, 彭喜元. 基于节点健康度的无线传感器网络冗余通路控制方法. , 2014, 63(12): 128401. doi: 10.7498/aps.63.128401
[14]	杨波, 卜雄洙, 王新征, 于靖. 高斯噪声和弱正弦信号驱动的时间差型磁通门传感器. , 2014, 63(20): 200702. doi: 10.7498/aps.63.200702
[15]	娄淑琴, 王鑫, 尹国路, 韩博琳. 基于侧漏型光子晶体光纤高灵敏度宽线性范围弯曲传感器的研究. , 2013, 62(19): 194209. doi: 10.7498/aps.62.194209
[16]	祁浩, 王福豹, 邓宏. 基于无线传感器网络的地震信号特征提取方法研究. , 2013, 62(10): 104301. doi: 10.7498/aps.62.104301
[17]	吴少兵, 陈实, 李海, 杨晓非. TMR与GMR传感器1/f噪声的研究进展. , 2012, 61(9): 097504. doi: 10.7498/aps.61.097504
[18]	黄覃, 冷逢春, 梁文耀, 董建文, 汪河洲. 光子晶体的相位特性在高灵敏温度传感器中的应用. , 2010, 59(6): 4014-4017. doi: 10.7498/aps.59.4014
[19]	李政颖, 王洪海, 姜宁, 程松林, 赵磊, 余鑫. 光纤气体传感器解调方法的研究. , 2009, 58(6): 3821-3826. doi: 10.7498/aps.58.3821
[20]	戎海武, 王向东, 徐伟, 孟光, 方同. 窄带随机噪声作用下Duffing振子的双峰稳态概率密度. , 2005, 54(6): 2557-2561. doi: 10.7498/aps.54.2557

计量

文章访问数: 17837
PDF下载量: 862
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板