介质材料二次电子发射特性对微波击穿的影响

翁明; 谢少毅; 殷明; 曹猛

doi:10.7498/aps.69.20200026

摘要

以介质填充的平行板放电结构为例, 本文主要研究了介质填充后微波低气压放电和微放电的物理过程. 为了探究介质材料特性对微波低气压放电和微放电阈值的影响, 本文采用自主研发的二次电子发射特性测量装置, 测量了7种常见介质材料的二次电子发射系数和二次电子能谱. 依据二次电子发射过程中介质表面正带电的稳定条件, 计算了介质材料稳态表面电位与二次电子发射系数以及能谱参数的关系. 在放电结构中引入与表面电位相应的等效直流电场后, 依据电子扩散模型和微放电中电子谐振条件, 分别探讨了介质表面稳态表面电位的大小对微波低气压放电和微放电阈值的影响. 结果表明, 介质材料的二次电子发射系数以及能谱参数越大, 介质材料的稳态表面电位也越大, 对应的微波低气压放电和微放电阈值也越大. 所得结论对于填充介质的选择有一定的理论指导价值.

关键词:

Abstract

For a microwave device filled with dielectrics, the secondary electron (SE) emission has a very important influence on the mechanism of microwave breakdown including low pressure discharge and multipactor. In this work, the SE yields (SEYs) and the SE energy spectra of seven kinds of dielectric materials are first measured and then used to examine their effects. In the positive charging process under electron irradiation, the surface potential of the dielectric layer trends to be steady with the SEY being one. Based on the measurement data, the steady surface potential is calculated under the charging stability condition. The steady surface potential is bigger for a bigger SEY. For a given SEY, the steady surface potential is found to be proportional to the peak energy E_peak of the SE energy spectrum. Furthermore, the effect of steady surface potential on low pressure discharge and multipactor are respectively studied for a parallel plate system filled with a dielectric layer. A static electric field related to the positive charging is introduced. The electron diffusion model in low pressure discharge process is modified by considering the static electric field. The electrons drift in a fixed direction under the action of static electric field, and the electron diffusion length decreases. Consequently, the effective electrons for low discharge decreases and the threshold microwave power increases. Therefore, a dielectric material with higher SEY and bigger E_peak is helpful in suspending the inhibition of low pressure discharge. Furthermore, the effect of steady electric field on multipactor is also explored. Two effects related to dielectric material and metal are analyzed in detail. The SE emission from dielectric material is held back by the steady electric field and some low energy electrons return back to the dielectric materials. The effective SEY thus decreases. On the other hand, the electric field reduces the landing electron energy on the metal, and the corresponding SEY also decreases. The electron oscillation condition with considering both microwave field and stead electric field is derived and the threshold values for microwave power of multipactor are calculated. The susceptibility curves corresponding to different materials are plotted. Our result may be used to choose the filling dielectric materials for a microwave device.

Keywords:

作者及机构信息

1.
西安交通大学电子与信息学部，电子物理与器件教育部重点实验室，西安　710049

2.
西北核技术研究院，西安　710613

通信作者: 曹猛, mengcao@mail.xjtu.edu.cn

基金项目: 国家级-国家自然科学基金(61971342)

Authors and contacts

1.
Key laboratory of Physical Electronics and Devices, Ministry of Education, School of Electronic and Informtion Engineering, Xi’an Jiaotong University, Xi’an 710049, China

2.
Northwest Institute of Nuclear Technology, Xi’an 710613, China

Corresponding author: Cao Meng, mengcao@mail.xjtu.edu.cn

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参考文献

[1]	Yu M 2007 IEEE Microwave Mag. 8 88
[2]	常超 2018 科学通报 63 1390 Google Scholar Chang C 2018 Chin. Sci. Bull. 63 1390 Google Scholar
[3]	Keneshloo R, Dadashzadeh G, Frotanpour A, Okhovvat, Okhovvat M 2012 J. Commun. Eng. 1 18
[4]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501 Google Scholar
[5]	Ángela C, Germán T P, Carlos V, Benito G, Vicente E B 2008 IEEE Trans. Electron Devices 55 2505 Google Scholar
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[11]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2018 67 177902 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2018 Acta Phys. Sin. 67 177902 Google Scholar
[12]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2017 66 207901 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2017 Acta Phys. Sin. 66 207901 Google Scholar
[13]	Weng M, Cao M, Zhao H J, Zhang H B 2014 Rev. Sci. Instrum. 85 036108 Google Scholar
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[15]	Weng M, Liu W, Yin M, Wang F, Cao M 2018 Chin. Phys. Lett. 35 047901 Google Scholar
[16]	翁明, 胡天存, 曹猛, 徐伟军 2015 64 157901 Google Scholar Weng M, Hu T C, Cao M, Xu W J 2015 Acta Phys. Sin. 64 157901 Google Scholar
[17]	Insepov Z, Ivanov V, Frisch H 2010 Nucl. Instrum. Methods Phys. Res., Sect. B 268 3315 Google Scholar
[18]	Lin Y H, Joy D C 2005 Surf. Interface Anal. 37 895 Google Scholar
[19]	Yong Y C, Thong J T L 2000 Scanning 22 161
[20]	Lisovskii V A 1999 Tech. Phys. 44 1282 Google Scholar
[21]	Albert J H, Williams H B 1954 J. Appl. Phys. 25 417 Google Scholar
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施引文献

图 1 7种介质材料SEY的测量结果

Fig. 1. The measured SEY of seven kinds of dielectric materials.

下载: 全尺寸图片幻灯片

图 2 能谱分布示意图

Fig. 2. The diagram of the secondary electron energy spectrum.

下载: 全尺寸图片幻灯片

图 3 稳态表面电位与SEY及能谱参数E_peak的关系

Fig. 3. The relationships of the steady state surface potential with the SEY and the spectrum parameter E_peak.

下载: 全尺寸图片幻灯片

图 4 稳态表面电位与入射电子能量的关系

Fig. 4. The relationships between the steady state surface potential and the incident electron energy.

下载: 全尺寸图片幻灯片

图 5 介质填充的平板系统示意图

Fig. 5. The schematic diagram of parallel plate discharge system filled with dielectric layer.

下载: 全尺寸图片幻灯片

图 6 V_dc对敏感区域右边界中不同模式最低击穿点的影响

Fig. 6. The influence of V_dc on the minimum breakdown point at different pattern of the right boundary in suscep-tibility zone.

下载: 全尺寸图片幻灯片

图 7 V_dc对敏感区域右边界斜率的影响

Fig. 7. The influence of V_dc on the slope of the right boundary in susceptibility zone.

下载: 全尺寸图片幻灯片

表 1 7种介质材料的SEY参数

Table 1. SEY of seven kinds of dielectric materials

样品	PMMA	Al₂O₃	SiO₂	PTFE	PE	PI	Mica
δ_m	2.517	7.355	4.149	2.244	2.564	1.819	4.333
E_pm/eV	278.9	881.9	285.4	321.3	279.5	237.6	335.4
y	1.67	1.67	1.50	1.55	1.61	1.67	1.55
W₁/eV	56.8	58.8	35.0	75.4	56.2	70.2	38.6
W₂/eV	1599	25051	8045	2185	1960	837	7555

下载: 导出CSV

表 2 7种材料的能谱特性

Table 2. The characteristics of energy spectrum of seven kinds of materials.

材料	PMMA	PTFE	PE	PI	Al₂O₃	SiO₂	Mica
E_peak/eV	4.264	4.203	4.023	3.087	2.898	2.376	2.988
FWHM/eV	14.058	13.851	13.284	10.206	9.765	7.857	9.882

下载: 导出CSV

map

[1]	Yu M 2007 IEEE Microwave Mag. 8 88
[2]	常超 2018 科学通报 63 1390 Google Scholar Chang C 2018 Chin. Sci. Bull. 63 1390 Google Scholar
[3]	Keneshloo R, Dadashzadeh G, Frotanpour A, Okhovvat, Okhovvat M 2012 J. Commun. Eng. 1 18
[4]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501 Google Scholar
[5]	Ángela C, Germán T P, Carlos V, Benito G, Vicente E B 2008 IEEE Trans. Electron Devices 55 2505 Google Scholar
[6]	Apostolos L S, Edén S, Michael M 2014 The 8th European Conference on Antennas and Propagation Hague, Netherlands, April 6−11, 2014 p1469
[7]	Germán T P, Ángela C, Benito G M, Isabel M, Carlos V, Vicente E B 2010 IEEE Trans. Electron Devices 57 1160 Google Scholar
[8]	Sorolla E, Belhaj M, Sombrin J, Puech J 2017 Phys. Plasmas 24 103508 Google Scholar
[9]	翟永贵, 王瑞, 王洪广, 林舒, 陈坤, 李永东 2018 67 157901 Google Scholar Zhai Y G, Wang R, Wang H G, Lin S, Chen K, Li Y D 2018 Acta Phys. Sin. 67 157901 Google Scholar
[10]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2018 67 037901 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2018 Acta Phys. Sin. 67 037901 Google Scholar
[11]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2018 67 177902 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2018 Acta Phys. Sin. 67 177902 Google Scholar
[12]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2017 66 207901 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2017 Acta Phys. Sin. 66 207901 Google Scholar
[13]	Weng M, Cao M, Zhao H J, Zhang H B 2014 Rev. Sci. Instrum. 85 036108 Google Scholar
[14]	殷明, 翁明, 刘婉, 王芳, 曹猛 2019 西安交通大学学报 53 163 Yin M, Weng M, Liu W, Wang F, Cao M 2019 Journal of Xi’an Jiaotong University 53 163
[15]	Weng M, Liu W, Yin M, Wang F, Cao M 2018 Chin. Phys. Lett. 35 047901 Google Scholar
[16]	翁明, 胡天存, 曹猛, 徐伟军 2015 64 157901 Google Scholar Weng M, Hu T C, Cao M, Xu W J 2015 Acta Phys. Sin. 64 157901 Google Scholar
[17]	Insepov Z, Ivanov V, Frisch H 2010 Nucl. Instrum. Methods Phys. Res., Sect. B 268 3315 Google Scholar
[18]	Lin Y H, Joy D C 2005 Surf. Interface Anal. 37 895 Google Scholar
[19]	Yong Y C, Thong J T L 2000 Scanning 22 161
[20]	Lisovskii V A 1999 Tech. Phys. 44 1282 Google Scholar
[21]	Albert J H, Williams H B 1954 J. Appl. Phys. 25 417 Google Scholar
[22]	Albert J H, Williams H B 1958 Phys. Rev. 112 681 Google Scholar

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