高能电子辐照绝缘厚样品的表面电位动态特性

李维勤; 郝杰; 张海波

doi:10.7498/aps.64.086801

摘要

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.

关键词:

Abstract

The surface potential and electron yield dynamic characteristics of an insulating thick sample under high-energy electron beam irradiation are obtained by combining the numerical simulation and experimental measurement. The numerical model takes into account the electron scattering, charge trapping, and charge transport. The results show that due to the electron scattering and transport, the space charge is weakly positive in the near surface and strongly negative inside sample; along the depth direction, the space potential decreases to a minimum value slowly, and then increases gradually and finally tends to zero; with the electron beam irradiation, the surface potential decreases to the negative kV magnitude gradually, and the total electron yield gradually increases to a stable value that is slightly less than unity. After stopping irradiation, the surface potential increases gradually, but charges are not eliminated completely. The surface potential decreases linearly with the increase of the beam energy, and increases with the increase of the incident angle, however it decreases slightly with the increase of the sample thickness.

Keywords:

作者及机构信息

1.
西安理工大学自动化与信息工程学院, 西安 710048;

2.
西安航空学院, 西安 710077;

3.
西安交通大学电子科学与技术系, 西安 710049

基金项目: 国家自然科学基金(批准号: 11175140)和陕西省自然科学基金(批准号: 2013JM8001)资助的课题.

Authors and contacts

1.
School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China;

2.
Xi'an Aeronautical University, Xi'an 710077, China;

3.
Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11175140) and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2013JM8001).

参考文献

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[3]	Belhaj M, Paulmier T, Hanna R, Arnaout M, Balcon N, Payan D, Puech J 2014 Nucl. Instrum. Meth. B 320 46
[4]	Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[5]	Sessler G M 1998 Electrets (New York: Springer-Verlag) p22
[6]	Sarrailh P, Mateo-Velez J C, Roussel J F, Dirassen B, Forest J, Thiebault B, Rodgers D, Hilgers A 2012 IEEE Trans. Plasma Sci. 40 368
[7]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
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[11]	Cornet N, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[12]	Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[13]	Rau E I, Fakhfakh S, Andrianov M V, Evstafeva E N, Jbara O, Rondot S, Mouze Z 2008 Nucl. Instrum. Meth. B 266 719
[14]	Balcon N, Payan D, Belhaj M, Tondu T, Inguimbert V 2012 IEEE Trans. Plasma Sci. 40 282
[15]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[16]	Li W Q, Zhang H B 2010 Micron 41 416
[17]	Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18]	Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
[19]	Czyźewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 3066
[20]	Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487
[21]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[22]	Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[23]	Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[24]	Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[25]	Desalvot A, Rosa R 1987 J. Phys. D 20 790
[26]	Penn D R 1987 Phys. Rev. B 35 482
[27]	Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[28]	Rau E I 2008 Appl. Surf. Sci. 254 2110
[29]	Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[30]	Li J J, Zhang H B, Feng R J 2007 J. Phys. D 40 826

施引文献

[1]	Reimer L 1993 Image Formation in Low Voltage Scanning Electron Microscopy (Bellingham: SPIE Optical Engineering Press) p71
[2]	Baer D R, Lea A S, Geller J D, Hammond J S, Kover L, Powell C J, Seah M P, Suzuki M, Watts J F, Wolstenholme J 2010 J. Electron Spectrosc. Relat. Phenom. 176 80
[3]	Belhaj M, Paulmier T, Hanna R, Arnaout M, Balcon N, Payan D, Puech J 2014 Nucl. Instrum. Meth. B 320 46
[4]	Paulmier T, Dirassen B, Payan D, Eesbeek M V 2009 IEEE Trans. Dielectr. Electr. Insul. 16 682
[5]	Sessler G M 1998 Electrets (New York: Springer-Verlag) p22
[6]	Sarrailh P, Mateo-Velez J C, Roussel J F, Dirassen B, Forest J, Thiebault B, Rodgers D, Hilgers A 2012 IEEE Trans. Plasma Sci. 40 368
[7]	Cao M, Wang F, Liu J, Zhang H B 2012 Chin. Phys. B 21 127901
[8]	Quan R H, Han J W, Zhang Z L 2013 Acta Phys. Sin. 62 245205 (in Chinese) [全荣辉, 韩建伟, 张振龙 2013 62 245205]
[9]	Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 (in Chinese) [秦晓刚, 贺德衍, 王骥 2009 58 684]
[10]	Cazaux J 2010 J. Electron Spectrosc. Relat. Phenom. 176 58
[11]	Cornet N, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Touzin M, Fitting H J 2008 J. Appl. Phys. 103 064110
[12]	Askri B, Raouadi K, Renoud R, Yangui B 2009 J. Electrostat. 67 695
[13]	Rau E I, Fakhfakh S, Andrianov M V, Evstafeva E N, Jbara O, Rondot S, Mouze Z 2008 Nucl. Instrum. Meth. B 266 719
[14]	Balcon N, Payan D, Belhaj M, Tondu T, Inguimbert V 2012 IEEE Trans. Plasma Sci. 40 282
[15]	Li W Q, Zhang H B 2010 Appl. Surf. Sci. 256 3482
[16]	Li W Q, Zhang H B 2010 Micron 41 416
[17]	Li W Q, Mu K, Xia R H 2011 Micron 42 443
[18]	Li W Q, Zhang H B, Lu J 2012 Acta Phys. Sin. 61 027302 (in Chinese) [李维勤, 张海波, 鲁君 2012 61 027302]
[19]	Czyźewski Z, MacCallum D O, Romig A, Joy D C 1990 J. Appl. Phys. 68 3066
[20]	Shimizu R, Ding Z J 1992 Rep. Prog. Phys. 55 487
[21]	Joy D C 1995 Monte Carlo Modeling for Electron Microscopy and Microanalysis (New York: Oxford University Press) p27
[22]	Li Y G, Mao S F, Li H M, Xiao S M, Ding Z J 2008 J. Appl. Phys. 104 064901
[23]	Mao S F, Ding Z J 2010 Surf. Interf. Anal. 42 1096
[24]	Da B, Mao S F, Zhang G H, Ding Z J 2012 J. Appl. Phys. 112 034310
[25]	Desalvot A, Rosa R 1987 J. Phys. D 20 790
[26]	Penn D R 1987 Phys. Rev. B 35 482
[27]	Touzin M, Goeuriot D, Guerret-Piécourt C, Juvé D, Tréheux D, Fitting H J 2006 J. Appl. Phys. 99 114110
[28]	Rau E I 2008 Appl. Surf. Sci. 254 2110
[29]	Mizuhara Y, Kato J, Nagatomi T, Takai Y, Inoue M 2002 J. Appl. Phys. 92 6128
[30]	Li J J, Zhang H B, Feng R J 2007 J. Phys. D 40 826

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