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二次电子的发射在生产实践中有着广泛的应用, 但其相关测量结果受实验环境和实验仪器的影响很大, 在实验中难以精确测量. 所以本文建立了一个包含二次电子激发、在固体内部传输和最后逸出固体表面的二次电子系统模型. 采用Monte-Carlo的模拟方法仿真二次电子运动轨迹, 定量分析二次电子的发射系数和能谱分布. 并探讨它们与一次电子的入射角度和入射能量的关系. 仿真结果表明: 本文建立的二次电子系统模型能较好地反映实际情况. 通过该模型仿真, 可以定量得到二次电子发射系数和能谱分布与一次电子的入射能量和入射角度的关系.
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关键词:
- 二次电子 /
- Monte-Carlo /
- 发射系数 /
- 能谱分布
The secondary electron emission is widely used in production practice, but it is difficult to measure accurately because the measuring result is severely affected by the experimental environment and equipment. A model of secondary electron emission is proposed in this paper. The model has three sections: the generation of secondary electrons, the motions of secondary electrons inside the solid and the escape of secondary electrons from the solid surface. Based on Monte-Carlo method, the relationship between the secondary electron emission coefficient and the range of energy with the energy and angle of the incident electrons is also analyzed. Simulation results show that the model proposed in this paper is corresponding to the actual condition very well. The relation between the secondary electron emission coefficient and the range of energy with the energy and angle of the incident electron is obtained.-
Keywords:
- secondary electrons /
- Monte-Carlo /
- electron emission coefficient /
- range of energy
[1] Kumagai K, Suzuki M, Sekiguchi T 2012 J. Appl. Phys. 111 54316
[2] Balcon N, Payan D, Belhaj M, Tondu T, Inguimbert V 2012 IEEE Trans. Plasma Sci. 40 282
[3] Chen D X 2011 M. S. Dissertation (Guangzhou: South China university of technology) (in Chinese) [陈达新 2011 硕士学位论文 (广州: 华南理工大学)]
[4] Zhang Z B, Ouyang X P, Xia H H, Chen L, Wang Q S, Wang L, Ma Y L, Pan H B, Liu L Y 2010 Acta Phys. Sin. 54 5369 (in Chinese) [张忠兵, 欧阳晓平, 夏海鸿, 陈亮, 王群书, 王兰, 马彦良, 潘洪波, 刘林月 2010 59 5369]
[5] Nilsson, Bengt A 2011 J. Vac. Sci. Technol. B 29 06F311
[6] Wang S L, Liu H X, Gao B, Cai H M 2012 Appl. Phys. Lett. 100 142105
[7] Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 148 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 55 148]
[8] Mao S F 2009 Ph. D. Dissertation (Anhui: University of science and technology of China) (in Chinese) [毛世峰 2009 博士学位论文 (安徽: 中国科学技术大学)]
[9] Thomas Joseph Quirk IV 2008 Ph. D. Dissertation (New Mexico: University of New Mexico) (in American)
[10] Thompson R L, Gurumurthy S C, Pattabi M 2011 J. Appl. Phys. 110 43533
[11] Browning R 1991 Appl. Phys. Lett. 58 2845
[12] Gryzinski M 1965 Phys. Rev. 138 336
[13] Shimizu R, lchimura 1983 Surf. Sci. 3 183
[14] Quinn J J 1962 Phys. Rev. 126 1453
[15] Song H Y, Zhang Y L, Wei Q, Kong X D 2005 Microfabrication Technology 2005(3) 14 (in Chinese) [宋会英, 张玉林, 魏强, 孔祥东 2005 微细加工技术 2005(3) 14]
[16] David C J 1995 Scanning 17 270
[17] Xie A G, Zhang J, Liu B, Wang T B 2012 High Power Laser and Particle Beams 24 481(in Chinese) [谢爱根, 张健, 刘斌, 王铁邦 2012 强激光与粒子束 24 481]
[18] Shimizu R 1974 J. Appl. Phys. J 45 2107
[19] Young J R 1957 J. Appl. Phys. 28 524
[20] Xue Z Q, Wu Q D 1993 Electron emission and the electronic energy (Beijing: Peking University Press) p145 (in Chinese) [薛增泉, 吴全德 1993 电子发射与电子能谱 (北京: 北京大学出版社) 第145页]
[21] Cheng H, Jiang J P 1986 Cathode Electronics (Xian: Northwest Telecommunication Engineering Institute Press) p176 (in Chinese) [承欢, 江剑平 1986 阴极电子学 (西安: 西北电讯工程学院出版社) 第176页]
[22] Zhuo J, Huang L X, Niu S L, Zhu J H, 2010 Chin. J. Comp. Phys. 27 805 (in Chinese) [卓俊, 黄流兴, 牛胜利, 朱金辉 2010 计算物理 27 805]
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[1] Kumagai K, Suzuki M, Sekiguchi T 2012 J. Appl. Phys. 111 54316
[2] Balcon N, Payan D, Belhaj M, Tondu T, Inguimbert V 2012 IEEE Trans. Plasma Sci. 40 282
[3] Chen D X 2011 M. S. Dissertation (Guangzhou: South China university of technology) (in Chinese) [陈达新 2011 硕士学位论文 (广州: 华南理工大学)]
[4] Zhang Z B, Ouyang X P, Xia H H, Chen L, Wang Q S, Wang L, Ma Y L, Pan H B, Liu L Y 2010 Acta Phys. Sin. 54 5369 (in Chinese) [张忠兵, 欧阳晓平, 夏海鸿, 陈亮, 王群书, 王兰, 马彦良, 潘洪波, 刘林月 2010 59 5369]
[5] Nilsson, Bengt A 2011 J. Vac. Sci. Technol. B 29 06F311
[6] Wang S L, Liu H X, Gao B, Cai H M 2012 Appl. Phys. Lett. 100 142105
[7] Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 148 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 55 148]
[8] Mao S F 2009 Ph. D. Dissertation (Anhui: University of science and technology of China) (in Chinese) [毛世峰 2009 博士学位论文 (安徽: 中国科学技术大学)]
[9] Thomas Joseph Quirk IV 2008 Ph. D. Dissertation (New Mexico: University of New Mexico) (in American)
[10] Thompson R L, Gurumurthy S C, Pattabi M 2011 J. Appl. Phys. 110 43533
[11] Browning R 1991 Appl. Phys. Lett. 58 2845
[12] Gryzinski M 1965 Phys. Rev. 138 336
[13] Shimizu R, lchimura 1983 Surf. Sci. 3 183
[14] Quinn J J 1962 Phys. Rev. 126 1453
[15] Song H Y, Zhang Y L, Wei Q, Kong X D 2005 Microfabrication Technology 2005(3) 14 (in Chinese) [宋会英, 张玉林, 魏强, 孔祥东 2005 微细加工技术 2005(3) 14]
[16] David C J 1995 Scanning 17 270
[17] Xie A G, Zhang J, Liu B, Wang T B 2012 High Power Laser and Particle Beams 24 481(in Chinese) [谢爱根, 张健, 刘斌, 王铁邦 2012 强激光与粒子束 24 481]
[18] Shimizu R 1974 J. Appl. Phys. J 45 2107
[19] Young J R 1957 J. Appl. Phys. 28 524
[20] Xue Z Q, Wu Q D 1993 Electron emission and the electronic energy (Beijing: Peking University Press) p145 (in Chinese) [薛增泉, 吴全德 1993 电子发射与电子能谱 (北京: 北京大学出版社) 第145页]
[21] Cheng H, Jiang J P 1986 Cathode Electronics (Xian: Northwest Telecommunication Engineering Institute Press) p176 (in Chinese) [承欢, 江剑平 1986 阴极电子学 (西安: 西北电讯工程学院出版社) 第176页]
[22] Zhuo J, Huang L X, Niu S L, Zhu J H, 2010 Chin. J. Comp. Phys. 27 805 (in Chinese) [卓俊, 黄流兴, 牛胜利, 朱金辉 2010 计算物理 27 805]
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