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采用辉光放电聚合技术,在不同工作压强条件下制备了掺硅的辉光放电聚合物(Si-GDP)薄膜.并采用傅里叶变换红外吸收光谱和X射线光电子能谱(XPS)对Si-GDP薄膜进行了表征,分析了压强变化对其内部结构及成分的影响.利用紫外—可见光谱对Si-GDP薄膜的光学带隙进行了分析.结果表明:Si-GDP薄膜中Si元素主要以Si—C,Si—H,Si—O,Si—CH3的键合形式存在;随着工作压强的增大,薄膜中Si—C键相对含量先减小后增加;从Si-GDP薄膜的XPS分析可以发现,C—C与C C含
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关键词:
- 硅掺杂辉光放电聚合物薄膜 /
- 工作压强 /
- 傅里叶变换红外吸收光谱 /
- X射线光电子能谱
The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different pressures. The structure and the composition of eath Si-doped glow discharge polymer film are characterized by the Fourier transform infrared spectroscopy and x-ray photoelectron. Using ultraviolet/visible spectroscopy, the optical band gap is analyzed. The results show that the Si element exists mainly in the form of Si—C, Si—H, Si—O, Si—CH3. The relative content of Si—C decreases and then increases with the increase of pressure. It can be found that the ratio between C—C and C C decreases with the increase of pressure. As the pressure increases, the optical band-gap decreases and then increases.-
Keywords:
- Si-doped glow discharge polymer films /
- pressure /
- Fourier transform infrared spectroscopy spectrum /
- x-ray photoelectron spectrum
[1] Nikroo A,Pontelandolfo J M,Castillo E R 2002 General Atomics Report GA-A23757
[2] Mokuno Y,Chayahara A,Horino Y,Nishimura Y 2002 Surf. Coat. Technol. 156 328
[3] Roy M,Mali K,Joshi N,Misra D S,Kulshreshtha S K 2007 Diam. Relat. Mater. 16 517
[4] Nikroo A,Steinman D A 1999 Fusion Technol. 35 212
[5] Hoppe M L 2000 Fusion Technol. 38 42
[6] Hoppe M L 2000 General Atomics Report GA-A23356
[7] Demichelis F,Pirri C F,Tresso E,Stapinski T 1992 J. Appl. Phys. 71 5641
[8] Liu B,Tang W J,Song Z X,Chen Y S,Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 58 2042]
[9] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[10] Bounouh Y,Thèye M L,Dehbi-Alaoui A,Matthews A,Stoquert J P 1995 Phys. Rev. B 51 9597
[11] Zhang B L,He Z B,Wu W D,Liu X H,Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 58 6436]
[12] Zhan B H,Son C L,Liu Y,Zhu J Q,Han G R 2005 J. Mater. Sci. Eng. 23 843 (in Chinese)[詹宝华、宋晨路、刘 涌、朱建强、韩高荣 2005 材料科学与工程学报 23 843]
[13] Wu W J,Mon M H 1999 Surf. Coat. Technol. 111 134
[14] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[15] Nikroo A,Czechowicz D G,Castillo E R,Pontelandolfo J M 2002 General Atomics Report GA-A23758
[16] Tauc J,Grigorovici R,Vancu A 1966 Phys. Stat. Sol. 15 627
[17] Xiao J R,Xu H,Guo A M,Wang H Y 2007 Acta Phys. Sin. 56 1809 (in Chinese) [肖剑荣、徐 惠、郭爱敏、王焕友 2007 56 1809]
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[1] Nikroo A,Pontelandolfo J M,Castillo E R 2002 General Atomics Report GA-A23757
[2] Mokuno Y,Chayahara A,Horino Y,Nishimura Y 2002 Surf. Coat. Technol. 156 328
[3] Roy M,Mali K,Joshi N,Misra D S,Kulshreshtha S K 2007 Diam. Relat. Mater. 16 517
[4] Nikroo A,Steinman D A 1999 Fusion Technol. 35 212
[5] Hoppe M L 2000 Fusion Technol. 38 42
[6] Hoppe M L 2000 General Atomics Report GA-A23356
[7] Demichelis F,Pirri C F,Tresso E,Stapinski T 1992 J. Appl. Phys. 71 5641
[8] Liu B,Tang W J,Song Z X,Chen Y S,Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 58 2042]
[9] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[10] Bounouh Y,Thèye M L,Dehbi-Alaoui A,Matthews A,Stoquert J P 1995 Phys. Rev. B 51 9597
[11] Zhang B L,He Z B,Wu W D,Liu X H,Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 58 6436]
[12] Zhan B H,Son C L,Liu Y,Zhu J Q,Han G R 2005 J. Mater. Sci. Eng. 23 843 (in Chinese)[詹宝华、宋晨路、刘 涌、朱建强、韩高荣 2005 材料科学与工程学报 23 843]
[13] Wu W J,Mon M H 1999 Surf. Coat. Technol. 111 134
[14] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[15] Nikroo A,Czechowicz D G,Castillo E R,Pontelandolfo J M 2002 General Atomics Report GA-A23758
[16] Tauc J,Grigorovici R,Vancu A 1966 Phys. Stat. Sol. 15 627
[17] Xiao J R,Xu H,Guo A M,Wang H Y 2007 Acta Phys. Sin. 56 1809 (in Chinese) [肖剑荣、徐 惠、郭爱敏、王焕友 2007 56 1809]
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