稀土元素掺杂的Hf基栅介质材料研究进展

郑晓虎; 黄安平; 杨智超; 肖志松; 王玫; 程国安

doi:10.7498/aps.60.017702

摘要

随着金属氧化物半导体场效应管(MOSFETs)等比缩小到45 nm技术节点,具有高介电常数的栅介质材料(高k材料)取代传统的SiO2已经成为必然,然而Hf基高k材料在实际应用中仍然存在许多不足,而稀土元素掺杂在提高Hf基栅介质材料的k值、降低缺陷密度、调整MOSFETs器件的阈值电压等方面表现出明显的优势.本文综述了Hf基高k材料的发展历程,面临的挑战,稀土掺杂对Hf基高k材料性能的调节以及未来研究的趋势.

关键词:

Abstract

As the scaling of MOSFETs continues towards 45 nm technology node, it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics, decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress, the challenge of Hf-based high-k materials, the influence of rare earth doping on Hf-based high-k materials and its future trend.

Keywords:

PACS:

作者及机构信息

(1)北京航空航天大学物理系,北京 100191; (2)北京师范大学射线束技术与材料改性教育部重点实验室,北京 100875

基金项目: 国家自然科学基金(批准号:50802005,11074020),教育部新世纪优秀人才基金(NCET-08-0035)和教育部博士点基金(批准号:200800061055)资助的课题.

Authors and contacts

(1)Department of Physics, Beihang University, Beijing 100191, China; (2)Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China

参考文献

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[1]	Moore G E 1975 Electron Devices Meeting December 1—3, 1975 21 p11
[2]	Robertson J 2006 Rep. Prog. Phys. 69 327
[3]	Wilk G D, Wallace R M, Anthony J M 2001 J. Appl. Phys. 89 5243
[4]	Sharma R K, Kumar A, Anthony J M 2001 JOM 53 53
[5]	Yeo Y C, King T J, Hu C 2002 J. Appl. Phys. 92 7266
[6]	Plummer J D, Griffin P B 2001 Proc. IEEE 89 240
[7]	Houssa M, Pantisano L, Ragnarsson L A, Degraeve R, Schram T, Pourtois G, Gendt S D, Groeseneken G, Heyns M M 2006 Mater. Sci. Eng. R 51 37
[8]	Bae S H, Lee C H, Clark R, Kwong D L 2003 IEEE Electron Dev. Lett. 24 556
[9]	Robertson J 2000 J. Vac. Sci. Technol. B 18 1785
[10]	Robertson J, Chen C W 1999 Appl. Phys. Lett. 74 1168
[11]	Koike M, Ino T, Kamimuta Y, Koyama M, Kamata Y, Suzuki M, Mitani Y, Nishiyama A, Tsunashima Y 2003 IEEE International Electron Devices Meeting Washington, D. C., December 08—10, 2003 p107
[12]	Yu X F, Zhu C X, Yu M B 2007 Appl. Phys. Lett. 90 103502
[13]	Umezawa N, Shiraishi K, Ohno K, Watanabe H, Chikyow T, Torii K, Yamabe K, Yamada K, Kitajima H, Arikado T 2005 Appl. Phys. Lett. 86 143507
[14]	Visokay M R, Chambers J J, Rotondaro A L P, Shanware A, Colombo L 2002 Appl. Phys. Lett. 80 3183
[15]	Xu G B, Xu Q X 2009 Chin. Phys. B 18 768
[16]	Sa N, Kang J F, Yang H, Liu X Y, Zhang X, Han R Q 2006 Acta Phys. Sin. 55 1419 (in Chinese) [萨宁、康晋锋、杨红、刘晓彦、张兴、韩汝琦 2006 55 1149]
[17]	Quevedo-Lopez M A, Krishnan S A, Kirsch P D, Pant G, Gnade B E, Wallace R M 2005 Appl. Phys. Lett. 87 262902
[18]	Choi C H, Jeon T S, Clark R, Kwong D L 2003 IEEE Electron Dev. Lett. 24 215
[19]	Wang S J, Chai J W, Dong Y F, Feng Y P, Sutanto N, Pan J S, Huan A C H 2006 Appl. Phys. Lett. 88 192103
[20]	Green M L, Gusev E P, Degraeve R, Garfunkel E L 2001 J. Appl. Phys. 90 2057
[21]	Chiou Y K, Chang C H, Wang C C, Lee K Y, Wu T B, Kwo R, Hong M H 2007 J. Electrochem Soc. 154 G99
[22]	Toriumi A, Iwamoto K, Ota H, Kadoshima M, Mizubayashi W, Nabatame T, Ogawa A, Tominaga K, Horikawa T, Satake H 2005 Microelectron. Eng. 80 190
[23]	Zhu W J, Tamagawa T, Gibson M, Furukawa T, Ma T P 2002 IEEE Electron Dev. Lett. 23 649
[24]	Wang X F, Li Q, Lee P F, Dai J Y, Gong X G 2010 Micron 41 15
[25]	Yu X F, Zhu C X, Li M F, Chin A, Yu M B, Du A Y, Kwong D L 2004 IEEE Electron Dev. Lett. 25 501
[26]	Yu X F, Yu M B, Zhu C X 2006 IEEE Electron Dev. Lett. 27 498
[27]	Yu X F, Yu M B, Zhu C X 2007 IEEE Electron Dev. Lett. 54 284
[28]	Zhang M H, Rhee S J, Kang C Y, Choi C H, Akbar M S, Krishnan S A, Lee T, 2005 Appl. Phys. Lett. 87 232901
[29]	Stacy D W, Wilder D R 1975 J. Am. Ceram. Soc. 58 285
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[35]	Park P K, Kang S W 2006 Appl. Phys. Lett. 89 192905
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[39]	Kita K, Kyuno K, Toriumi A 2005 Appl. Phys. Lett. 86 102906
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[48]	Toriumi A, Kita K, Tomida K, Yamamoto Y 2005 208th ECS Meeting, Los Angeles, California, October 16—21, 2005 p185
[49]	Yamamoto Y, Kita K, Kyuno K, Toriumi A 2006 Appl. Phys. Lett. 89 032903
[50]	Wang X P, Yu H Y, Li M F, Zhu C X, Biesemans S, Chin A, Sun Y Y, Feng Y P, Lim A, Yeo Y C, Loh W Y, Lo G Q, Kwong D L 2007 IEEE Electron Dev. Lett. 28 258
[51]	Gavartin J L, Muoz Ramo D, Shluger A L 2006 Appl. Phys. Lett. 89 082908
[52]	Liu D, Robertson J 2009 Appl. Phys. Lett. 94 042904
[53]	Xiong K, Robertson J, Clark S J 2006 Phys. Status Solidi B 243 2071
[54]	Umezawa N, Shiraishi K, Sugino S, Tachibana A, Ohmori K, Kakushima K, Iwai H, Chikyow T, Ohno T, Nara Y, Yamada K 2007 Appl. Phys. Lett. 91 132904
[55]	Lee B H, Oh J, Tseng H H, Jammy R, Huff H 2006 Mater. Today 8 32
[56]	Yeo Y C, King T J, Hu C M 2002 J. Appl. Phys. 92 7266
[57]	Yeo Y C, Ranade P, King T J, Hu C M 2002 IEEE Electron Dev. Lett. 23 342
[58]	Wen H C, Majhi P, Choi K, Park C S, Alshareef H N, Harris H R, Luan H, Niimi H, Park H B, Bersuker G, Lysaght P S, Kwong D L, Song S C, Lee B H, Jammy R 2008 Microelectron. Eng. 85 2
[59]	Kirsch P D, Sivasubramani P, Huang J, Young C D, Quevedo-Lopez M A, Wen H C, Alshareef H, Choi K, Park C S, Freeman K, Hussain M M, Bersuker G, Harris H R, Majhi P, Choi R, Lysaght P, Lee B H, Tseng H H, Jammy R, B?scke T S, Lichtenwalner D J, Jur J S, Kingon A I 2008 Appl. Phys. Lett. 92 092901
[60]	Arimura H, Oku Y, Saeki M, Kitano N, Hosoi T, Shimura T, Watababe H 2010 J. Appl. Phys. 107 034104
[61]	Xu Q X, Xu G B, Wang W W, Chen D P, Shi S L, Han Z S, Ye C T 2008 Appl. Phys. Lett. 93 252903
[62]	Kirsch P D, Quevedo-Lopez M A, Krishnan S A, Krug C, AlShareef H, Park C S, Harris R, Moumen N, Neugroschel A, Bersuker G, Lee B H, Wang J G, Pant G, Gnade B E, Kim M J, Wallace R M, Jur J S, Lichtenwalner D J, Kingon A I, Jammy R 2006 IEEE Electron Devices Meeting, San Francisco, CA, December 11—13, 2006 p1
[63]	Yan Z J, Wang Y Y, Xu R, Jang Z M 2004 Acta Phys. Sin. 53 2771 (in Chinese) [阎志军、王印月、许闰、蒋最敏 2004 53 2771]

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