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TiO2 thin films doped with rare-earth yttrium and lanthanum were prepared on quartz plate by sol-gel/spin-coating technique. The samples were annealed at 700 to 1100 ℃ and the Raman spectra of the samples were obtained. Analysis of Raman spectra shows that with increasing annealing temperature, the anatase form of undoped TiO2 thin film transforms eventually into the rutile phase with mixed anatase/ rutil phase as an intermediate. Yttrium doping and lanthanum doping of TiO2 thin films can inhibit the phase transformation, and the latter effect is stronger. Rare-earth doping refines grain size of TiO2 thin films and increases the internal stress, thereby preventing lattice vibration. The effect of La doping is stronger than yttrium doping. The samples show significant phonon confinement effect. That is to say, the characteristic Raman peaks blue shift and the full widths at half height increase and the peak shap easymmetricaly stretches with decrease of grain size.
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Keywords:
- TiO2 thin film /
- rare-earth doping /
- Raman spectroscopy /
- sol-gel method
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[2] Liang L Y, Dai S Y, Hu L H, Dai J, Liu W Q 2009 Acta Phys. Sin. 58 1338 (in Chinese)[梁林云、戴松元、胡林华、戴 俊、刘伟庆 2008 58 1338]
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[7] Wu J C S, Chen C H 2004 J. Photochem. Photobiol. A: Chemistry 163 509
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[10] Mathews N R, Morales E R, Cortés-Jacome M A, Toledo Antonio J A 2009 Solar Energy 83 1499
[11] Zeng Q G, Ding Z J, Zhang Z M 2006 J. Lumin. 118 301
[12] Saif M, Abdel-Mottaleb M S A 2007 Inorg. Chim. Acta 360 2863
[13] Chen S Y, Ting C C, Hsieh W F 2003 Thin Solid Films 434 171
[14] Battisha I K 2007 J. Non-Cryst. Solids 353 1748
[15] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Appl. Surf. Sci. 229 140
[16] Wu X H, Qin W, Wang S, Jiang Z H, Guo Y, Xie Z Y 2006 Rare Metals 25 169
[17] Prociow E L, Domaradzki J, Podhorodecki A, Borkowska A, Kaczmarek D, Misiewicz J 2007 Thin Solid Films 515 6344
[18] Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chem. Eng. J. 155 83
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[20] Balachandran U, Eror N G 1982 J. Solid State Chem. 42 276
[21] Swamy V, Kuznetsov A, Dubrovinsky L S, Caruso R A, Shchukin D G, Muddle B C 2005 Phys. ReV. B 71 184302
[22] Orendorz A, Brodyanski A, Lsch J, Bai L H, Chen Z H, Le Y K, Ziegler C, Gnaser H 2007 Surf. Sci. 601 4390
[23] Foger K, Anderson J R 1986 Appl. Catal. A23 139
[24] Xia B, Huang H, Xie Y 1999 Mater. Sci. Eng. B 57 150
[25] Hyun C C, Young M J, Seung B K 2005 Vib. Spectrosc 37 33
[26] Turkovi Dc' A, Ivanda M, Popovi Dc' S, Toncjc A, Goti Dc' M, Dub Dc' ek P, Musi Dc' S 1997 J. Mol. Struct. 410 271
[27] Musi Dc' S, Goti Dc' M, Ivanda M, Popovi Dc' S, Turkovi Dc' A, Trojko R, Sekuli Dc' A, Furi Dc' K 1997 Mater. Sci. Eng. B 47 33
[28] Yin L S, Tan M, Chen Y P, Li T, Fan H L 2008 J. Cent. South Univ. (Science and Technology) 39 665 (in Chinese) [尹荔松、谭 敏、陈永平、李 婷、范海陆 2008 中南大学学报 (自然科学版) 39 665]
[29] Ya J, Jia D, Liu Y Z 2001 Journal of the Chinese Ceramic Society 29 90 (in Chinese) [雅 菁、贾 堤、刘云兆 2001 硅酸盐学报 29 90]
[30] Xu Z Y, Li P X 1986 Introduction to Marterial Science (Shanghai: Shanghai scientific & Technical Publishers) p326 (in Chinese) [徐祖耀、李鹏兴 1986 材料科学导论 (上海: 上海科技出版社) 第326页]
[31] Zhang S L 2008 Raman spectroscopy and Low-dimensional Nanometer Semiconductor (Beijing: Science Press) p218 (in Chinese) [张树霖 2008 拉曼光谱学与低维纳米半导体 (北京: 科学出版社) 第218页]
[32] Bersani D, Lottici P P, Ding X Z 1997 Appl. Phys. Lett. 72 73
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[1] Zhang Y, Zhao Y, Cai N, Xiong S Z 2008 Acta Phys. Sin. 57 5806 (in Chinese)[张 苑、赵 颖、蔡 宁、熊绍珍 2008 57 5806]
[2] Liang L Y, Dai S Y, Hu L H, Dai J, Liu W Q 2009 Acta Phys. Sin. 58 1338 (in Chinese)[梁林云、戴松元、胡林华、戴 俊、刘伟庆 2008 58 1338]
[3] Kashif N, Ou Y F 2009 J Environ. Sci-China 21 527
[4] Kaegi R, Ulrich A, Sinnet B, Vonbank R, Wichser A, Zuleeg S, Simmler H, Brunner S, Vonmont H, Burkhardt M, Boller M 2008 Environ. Pollut. 156 233
[5] Uroebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454
[6] Asahi R, Morikawa T, Ohwaki T, Aoki K, Taga Y 2001 Science 293 269
[7] Wu J C S, Chen C H 2004 J. Photochem. Photobiol. A: Chemistry 163 509
[8] Zhang C Q, Zhang X 1997 Rare Earth Metallurgy Principles and Processes (Beijing: Metallurgical Industry Press) p58 (in Chinese) [张长鑫、张 新 1997 稀土冶金原理与工艺 (北京: 冶金工业出版社) 第58页]
[9] Ivanda M, Musi Dc' S, Goti Dc' M, Turkovi Dc' A, Tonejc A M, Gamulin O 1999 J. Mol. Struct. 480-481 641
[10] Mathews N R, Morales E R, Cortés-Jacome M A, Toledo Antonio J A 2009 Solar Energy 83 1499
[11] Zeng Q G, Ding Z J, Zhang Z M 2006 J. Lumin. 118 301
[12] Saif M, Abdel-Mottaleb M S A 2007 Inorg. Chim. Acta 360 2863
[13] Chen S Y, Ting C C, Hsieh W F 2003 Thin Solid Films 434 171
[14] Battisha I K 2007 J. Non-Cryst. Solids 353 1748
[15] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Appl. Surf. Sci. 229 140
[16] Wu X H, Qin W, Wang S, Jiang Z H, Guo Y, Xie Z Y 2006 Rare Metals 25 169
[17] Prociow E L, Domaradzki J, Podhorodecki A, Borkowska A, Kaczmarek D, Misiewicz J 2007 Thin Solid Films 515 6344
[18] Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chem. Eng. J. 155 83
[19] Huang H, Luo H J, Yao X 2002 Acta Phys. Sin. 51 1881 (in Chinese)[黄 晖、罗宏杰、姚 熹 2002 51 1881]
[20] Balachandran U, Eror N G 1982 J. Solid State Chem. 42 276
[21] Swamy V, Kuznetsov A, Dubrovinsky L S, Caruso R A, Shchukin D G, Muddle B C 2005 Phys. ReV. B 71 184302
[22] Orendorz A, Brodyanski A, Lsch J, Bai L H, Chen Z H, Le Y K, Ziegler C, Gnaser H 2007 Surf. Sci. 601 4390
[23] Foger K, Anderson J R 1986 Appl. Catal. A23 139
[24] Xia B, Huang H, Xie Y 1999 Mater. Sci. Eng. B 57 150
[25] Hyun C C, Young M J, Seung B K 2005 Vib. Spectrosc 37 33
[26] Turkovi Dc' A, Ivanda M, Popovi Dc' S, Toncjc A, Goti Dc' M, Dub Dc' ek P, Musi Dc' S 1997 J. Mol. Struct. 410 271
[27] Musi Dc' S, Goti Dc' M, Ivanda M, Popovi Dc' S, Turkovi Dc' A, Trojko R, Sekuli Dc' A, Furi Dc' K 1997 Mater. Sci. Eng. B 47 33
[28] Yin L S, Tan M, Chen Y P, Li T, Fan H L 2008 J. Cent. South Univ. (Science and Technology) 39 665 (in Chinese) [尹荔松、谭 敏、陈永平、李 婷、范海陆 2008 中南大学学报 (自然科学版) 39 665]
[29] Ya J, Jia D, Liu Y Z 2001 Journal of the Chinese Ceramic Society 29 90 (in Chinese) [雅 菁、贾 堤、刘云兆 2001 硅酸盐学报 29 90]
[30] Xu Z Y, Li P X 1986 Introduction to Marterial Science (Shanghai: Shanghai scientific & Technical Publishers) p326 (in Chinese) [徐祖耀、李鹏兴 1986 材料科学导论 (上海: 上海科技出版社) 第326页]
[31] Zhang S L 2008 Raman spectroscopy and Low-dimensional Nanometer Semiconductor (Beijing: Science Press) p218 (in Chinese) [张树霖 2008 拉曼光谱学与低维纳米半导体 (北京: 科学出版社) 第218页]
[32] Bersani D, Lottici P P, Ding X Z 1997 Appl. Phys. Lett. 72 73
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