Structural design of dual carrier multiplication avalanche photodiodes on InP substrate

Zhao Hua-Liang; Peng Hong-Ling; Zhou Xu-Yan; Zhang Jian-Xin; Niu Bo-Wen; Shang Xiao; Wang Tian-Cai; Cao Peng

doi:10.7498/aps.72.20230885

Abstract

Avalanche photodiodes are widely used in various fields, such as optical communication and laser radar, because of their high multiplication. In order to adapt to very weak signal detection applications, devices are required to have higher gain values. The existing avalanche photodiodes generally use single carrier multiplication mode of operation, its multiplication effect is limited. In this paper is designed an InP/In_0.53Ga_0.47As/In_0.52Al_0.48As avalanche photodiode structure with electrons and holes jointly involved in multiplication. In this structure, In_0.53Ga_0.47As material is used for the absorption layer, InP material is used for the hole multiplication layer, In_0.52Al_0.48As is used for the electron multiplication layer, and the two multiplication layers are distributed on the upper side and lower side of the absorber layer. Under the reverse bias, the photogenerated electrons and the absorber-layer generated holes can enter into the respective multiplier layers in different directions and create the avalanche multiplication effect, so that the carriers are fully utilized. This structure and the conventional single multiplication layer structure are simulated by Silvaco TCAD software. Comparing the single InP multiplication layer structure with the single In_0.52Al_0.48As multiplication layer structure, the gain value of the double multiplication layer structure at 95% breakdown voltage is about 2.3 times and about 2 times of the former two, respectively, and the device has a larger gain value because both carriers are involved in multiplication in both multiplication layers at the same time. The structure has a dark current of 1.5 nA at 95% breakdown voltage, which does not increase in comparison with the single multiplication layer structure, owing to the effective control of the electric field inside the structure by multiple charge layers. Therefore, this structure is expected to improve the detection sensitivity of the system.

Keywords:

Authors and contacts

1.
School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
2.
Weifang Academy of Advanced Opto-Electronic Circuits, Weifang 261071, China
3.
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
4.
School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, China
5.
School of Physics and Electronic Information, Weifang University, Weifang 261061, China

Corresponding author: Peng Hong-Ling, hlpeng@semi.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFE0200900).

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References

[1]	Mccarthy A, Ren X, Della F A, Gemmell N R, Krichel N J, Scarcella C, Rugger A, Tosi A, Buller G S 2013 Opt. Express 21 22098 Google Scholar
[2]	Bertone N, Clark W 2007 Laser Focus World 43 69
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Cited By

图 1 双载流子倍增APD结构示意图

Figure 1. Schematic diagram of double carrier multiplication APD structure.

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图 2 双载流子倍增APD能带示意图

Figure 2. Band diagram of the double carrier multiplication APD.

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图 3 结构Ⅰ零偏压能带分布

Figure 3. Energy band distribution under zero bias of structure I.

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图 4 结构Ⅰ在击穿电压下的电场分布

Figure 4. Distribution of electric field at breakdown voltage for structure Ⅰ.

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图 5 结构Ⅰ在击穿电压下的电离系数分布

Figure 5. Distribution of ionization coefficient at breakdown voltage for structure Ⅰ.

DownLoad: Full-Size Img PowerPoint

图 6 结构Ⅰ的I-V特性与增益曲线

Figure 6. Currrent-voltage characteristics and gain of the structure Ⅰ.

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图 7 不同反向偏压下结构Ⅰ的电场分布

Figure 7. Electric field distribution of structure Ⅰ under the different reverse bias voltage.

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图 8 I-V特性与增益曲线　(a)结构Ⅱ; (b)结构Ⅲ

Figure 8. Curve of I-V characteristics and gain: (a) Structure Ⅱ; (b) structure Ⅲ.

DownLoad: Full-Size Img PowerPoint

图 9 简化的结构Ⅰ电场分布

Figure 9. Electric field distribution of the simplified structure Ⅰ.

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表 1 InAlAs和InP碰撞电离系数的仿真参数

Table 1. Simulation parameters for the ionization coefficients of InAlAs and InP.

材料 a_n/cm^–1 a_p/cm^–1 b_n/(V·cm^–1) b_p/(V·cm^–1)

InP 1.0×10⁷ 9.36×10⁷ 3.45×10⁶ 2.78×10⁶

InAlAs 6.2×10⁷ 1.00×10⁶ 4.00×10⁶ 4.00×10⁶

DownLoad: CSV

表 2 三种结构特性对比

Table 2. Comparison of the characteristics of three structures.

结构击穿电压/V 暗电流/nA 增益

Ⅰ 69 1.5(@66 V) 35(@66 V)
Ⅱ 44 2.0(@42 V) 15(@42 V)
Ⅲ 45 1.5(@43 V) 18(@43 V)

DownLoad: CSV

map

[1]	Mccarthy A, Ren X, Della F A, Gemmell N R, Krichel N J, Scarcella C, Rugger A, Tosi A, Buller G S 2013 Opt. Express 21 22098 Google Scholar
[2]	Bertone N, Clark W 2007 Laser Focus World 43 69
[3]	Mitra P, Beck J D, Skokan M R, Skokan M R, Robinson J E, Antoszewski J, Winchester K J, Keating A J, Nguyen T, Silva K, Musca C A, Dell J M, Faraone L 2006 SPIE Defense Commercial Sensing Orlando, United States, April 14–19, 2006 p70
[4]	Tosi A, Calandri N, Sanzaro M, Acerbi F 2014 IEEE J. Sel. Top. Quant. 20 192 Google Scholar
[5]	Jiang X, Itzler M, O’Donnell K, Entwistle M, Owens M, Slomkowski K, Rangwala S S 2014 IEEE J. Sel. Top. Quant. 21 5 Google Scholar
[6]	Lee C, Johnson B, Molnar A C 2015 App. Phys. Lett. 106 231105 Google Scholar
[7]	Nishida K, Taguchi K, Matsumoto Y 1979 App. Phys. Lett. 35 251 Google Scholar
[8]	Li J, Dehzangi A, Brown G J, Razeghi M 2021 Sci. Rep. 11 7104 Google Scholar
[9]	Tarof L E 1990 IEEE Photonic. Tech. L. 2 643 Google Scholar
[10]	Campbell J C, Dentai A G, Holden W S, Kasper B L 1983 Electron. Lett. 19 818 Google Scholar
[11]	Matsushima Y, Akiba S, Sakai K, Kushiro Y, Noda Y, Utaka K 1982 Electron. Lett. 22 945 Google Scholar
[12]	Capasso F, Cho A Y, Foy P W 1984 Electron. Lett. 20 635 Google Scholar
[13]	Forrest S R, Kim O K, Smith R G 1982 App. Phys. Lett. 41 95 Google Scholar
[14]	Ma C, Deen M J, Tarof L E 1995 IEEE Trans. Electron Devices 42 2070 Google Scholar
[15]	Emmons R B 1967 J. Appl. Phys. 38 3705 Google Scholar
[16]	Mcintyre R J 1966 IEEE Trans. Electron Devices 13 164 Google Scholar
[17]	曾巧玉 2014 博士学位论文 (北京: 中国科学院大学) Zeng Q Y 2014 Ph. D. Dissertation (Beijing: University of Chinese Academy of Sciences
[18]	吕粤希 2018 硕士学位论文 (北京: 中国科学院大学) Lü Y X 2018 M. S. Thesis (Beijing: University of Chinese Academy of Sciences
[19]	Cook L W, Bulman G E, Stillman G E 1982 App. Phys. Lett. 40 589 Google Scholar
[20]	Goh Y L, Massey D, Marshall A R, Ng J S, Tan C H, Ng W K, Rees G J, Hopkinson M, David J P, Jones S 2007 IEEE Trans. Electron Devices 54 11 Google Scholar
[21]	Capasso F, Mohammed K, Alavi K, Cho A Y, Foy P W 1984 App. Phys. Lett. 45 968 Google Scholar
[22]	Melchior H, Hartman A R, Schinke D P, Seidel T E 1978 Bell Syst. Tech. J. 57 1791 Google Scholar
[23]	Li X, Bamiedakis N, Wei J L, Penty R V, White I H 2014 Conference on Lasers and Electro-Optics (CLEO)—Laser Science to Photonic Applications San Jose, United States, June 8–13, 2014 p1
[24]	Campbell J C 2004 IEEE J. Sel. Top. Quant. 10 777 Google Scholar
[25]	Miller S L 1955 Phys. Rev. 99 1234 Google Scholar
[26]	Ma C F, Deen M J, Tarof L E 1997 Adv. Imag. Elect. Phys. 99 65 Google Scholar
[27]	Jones A H, March S D, Dadey A A, Muhowski A J, Bank S R, Campbell J C 2022 IEEE J. Quantum Electron. 58 1 Google Scholar
[28]	Woodson M E, Ren M, Maddox S J, Chen Y, Bank S R, Campbell J C 2016 App. Phys. Lett. 108 081102 Google Scholar
[29]	Huang J, Banerjee K, Ghosh S, Hayat M M 2013 IEEE Trans. Electron Devices 60 2296 Google Scholar
[30]	Okuto Y, Crowell C R 1974 Phys. Rev. B 10 4284 Google Scholar
[31]	谢生, 张帆, 毛陆虹 2022 华中科技大学学报(自然科学版) 5 1 Google Scholar Xie S, Zhang F, Mao L H 2022 J. Huazhong Univ. of Sci. & Tech. (Natural Science Edition) 5 1 Google Scholar
[32]	Saleh M A, Hayat M M, Sotirelis P, Holmes A L, Campbell J C, Saleh B E, Teich M C 2001 IEEE Trans. Electron Devices 48 2722 Google Scholar
[33]	李慧梅 2016 硕士学位论文 (北京: 中国科学院大学) Li H M 2016 M. S. Thesis (Beijing: University of Chinese Academy of Sciences
[34]	Haško D, Kovác J, Uherek F, Škriniarová J, Jakabovic J, Peternai L 2006 Microelectron. J. 37 483 Google Scholar

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