Initial growth behavior of bismuth on Ag(111) and Au(111)

Hu Jin-Ping; He Bing-Chen; Wang Hong-Bing; Zhang Huan; Huang Chao-Qin; Xie Lei; Guo Xiao; Liang Zhao-Feng; Chen Shi; Huang Han; Song Fei

doi:10.7498/aps.71.20211360

Abstract

The Rashba effect of surface alloys of semimetallic bismuth (Bi) is strongly related to its specific structural properties. The initial growth behaviors of Bi atoms on Ag(111) substrate and Au(111) substrate are systematically investigated by combining scanning tunneling microscopy (STM) and density flooding theory (DFT) in this paper. Continuous Ag₂Bi alloy films are formed preferentially at the step edge on Ag(111) held at room temperature; Bi atoms replace step edge atoms with low coordination number and are randomly distributed from single atoms to the forming of long-range ordered Ag₂Bi alloy phase as the coverage increases to 0.33 ML on Ag(111) held at 570 K. With the coverage increasing, Ag₂Bi is converted into Bi films with a $ p\times \sqrt{3} $ structure by the dealloying process. In contrary to Ag(111), Bi growth behavior on Au(111) held at room temperature and at 570 K are consistent: Bi atoms are adsorbed preferentially on Au atom pairs with coordination 5 and are dispersed as single atoms and clusters in the densely packed region and the corners of the herringbone reconstruction when coverage level is below 0.40 ML; as the coverage level increases to 0.60 ML, the disordered Bi atoms gradually transform into the long-range ordered ($ \sqrt{37}\times \sqrt{37} $) phase. Moreover, the adsorption of Bi atoms leads the Au(111) surface strain to gradually release. The different growth behaviors of Bi atoms on Ag(111) substrate and Au(111) substrate suggest that the interaction between Bi atoms and the substrate plays a key role. Bi atoms are adsorbed preferentially around atoms with low surface coordination number under low coverage.

Keywords:

Authors and contacts

1.
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China
3.
Affiliated High School of South China Normal University, Guangzhou 510630, China
4.
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, China
5.
Shanghai Synchrotron Radiation Faciality, Zhangjiang Laboratory, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201200, China
6.
School of Physics Science and Electronics, Central South University, Changsha 410083, China

Corresponding author: Huang Han, physhh@csu.edu.cn ; Song Fei, songfei@sinap.ac.cn

Funds: Projected supported by National Natural Science Foundation of China (Grant Nos. 11874380, 11874427) and the National Key Research and Development Program of China (Grant No. 2021YFA1600802).

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References

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Cited By

图 1 0.10 ML Bi原子沉淀到Ag(111)表面的STM图　(a) 大面积的STM图, 图中包含Ag(111)台阶, 在台阶处有大量的Bi原子聚集; (b) 图(a)中靠近台阶边的放大图; (c) 图(a)中台面上的放大图; (d) Bi原子嵌入到Ag(111)表面的模型图; Ag原子: 白色; Bi原子: 紫色. 图中标尺和整个图的比例为1∶5

Figure 1. STM images of 0.10 ML Bi deposited on Ag(111) surface: (a) Large scale STM image contains Ag(111) step where an amount of Bi atoms are aggregated; (b) high-resolution STM image is obtained at step edge in Figure (a); (c) high-resolution STM image is obtained far away the step edge in Figure (a); (d) model structure of Bi atom embedded in Ag(111) surface. Ag atom: white; Bi atom: purple. The scale ruler of images in Figure (a)–(c) images is 1∶5.

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图 2 (a) 干净的Au(111) STM图, 左下角插图是Au(111)原子分辨; (b), (c) 在常温Au(111)表面沉积0.04 ML, 0.15 ML Bi

Figure 2. (a) Large-scale STM image of cleaning Au(111) surface. The bottom left inset shows the atomic resolution STM image of Au(111) surface; (b), (c) different amounts of Bi are deposited on Au(111) surface of Au(111) at room temperature. The coverage of (a), (b) is 0.04 ML, and 0.15 ML, respectively.

DownLoad: Full-Size Img PowerPoint

图 3 在570 K的Ag(111)衬底上沉淀不同覆盖度的Bi原子　(a) 0.10 ML; (b) 0.25 ML; (c) 0.31 ML; (d) 0.33 ML. (b), (c)中的插图是FFT变换; (d)中的插图是LEED图, 黄色圆圈中的点是Ag(111)的第一级衍射斑点, 品红色圆圈中的点是$ \sqrt{3}\times \sqrt{3} $结构的第一级衍射斑点; (c)中的黑色虚线标明了三个原子长度的线缺陷. 图中标尺和整个图的比例为1∶5

Figure 3. Bi atoms were deposited on Ag(111) surface with 570 K: (a) 0.10 ML; (b) 0.25 ML; (c) 0.31 ML; (d) 0.33 ML. The insets are FFT transform in Figure (b) and (c). The inset is a LEED image where the dots in the yellow circle are the first order diffraction spots of Ag(111) and the dots in the magenta circle are the first order diffraction spots of the $ \sqrt{3}\times \sqrt{3} $ structure in (d). The black dotted line in c indicates a line defect of three atomic lengths. The scale ruler of images in Figure (a)–(d) images is 1∶5.

DownLoad: Full-Size Img PowerPoint

图 4 在常温和加热570 K的情况, Bi膜退合金过程　(a) 在保持常温的$ \sqrt{3}\times \sqrt{3} $结构上再沉淀0.07 ML Bi得到的STM图, 左下角插图是单层$ p\times \sqrt{3} $结构的原子分辨图; (b) 在图(a)的基础上, 将样品加热至570 K并保温10 min得到的STM图; (c) $\sqrt{3}\times $$ \sqrt{3}$结构和$ p\times \sqrt{3} $结构交界处的侧视图. Ag原子: 蓝绿色; Bi原子: 紫色. 图中标尺和整个图的比例为1∶5

Figure 4. Observation of Bi film alloying-to-dealloying transition at room temperature and 570 K: (a) 0.07 ML Bi was deposited on $ \sqrt{3}\times \sqrt{3} $ structure kept at room temperature. The bottom left inset shows the atomic resolution STM image of $ p\times \sqrt{3} $ structure; (b) heating the sample to 570 K and holding for 10 min; (c) side view of $ \sqrt{3}\times \sqrt{3} $ structure and $ p\times \sqrt{3} $ structure. Ag atom: blue-green; Bi atom: purple. The scale ruler of images in Figure (a)–(b) is 1∶5.

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图 5 低覆盖度下, Bi原子调控鱼骨纹形状　(a), (c) 570 K的Au(111)衬底上蒸镀0.02 ML, 0.18 ML Bi原子; (b), (d) 分别是图(a)和图(c)的放大图

Figure 5. Bi atoms regulate the shape of herringbone below 0.18 ML: (a), (c) 0.02 ML and 0.18 ML Bi is deposited on Au(111) surface with 570 K; (b), (d) high-resolution STM images of Figure(a) and Figure (c), respectively.

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图 6 (a), (c) 在保温570 K的Au(111)衬底上蒸镀0.40 ML, 0.60 ML Bi原子; (b), (d) 分别是图(a)和图(c)的放大图. 图中标尺和整个图的比例为1:5

Figure 6. (a), (c) 0.40 ML, 0.60 ML Bi is deposited on Au(111) surface with 570 K; (b), (d) high-resolution STM images of Figure (a) and Figure (c), respectively. The scale ruler of images in Figure (a) and Figure (c) is 1∶5.

DownLoad: Full-Size Img PowerPoint

map

[1]	Hofmann P 2006 Prog. Surf. Sci. 81 191 Google Scholar
[2]	Yang F Y, Liu K, Hong K M, Reich D H, Searson P C, Chien C L 1999 Science 284 1335 Google Scholar
[3]	Ast C R, Hochst H 2004 Phys. Rev. B 70 245122 Google Scholar
[4]	Pascual J I, Bihlmayer G, Koroteev Y M, Rust H P, Ceballos G, Hansmann M, Horn K, Chulkov E V, Blugel S, Echenique P M, Hofmann P 2004 Phys. Rev. Lett. 93 196802 Google Scholar
[5]	Hofmann P, Gayone J E, Bihlmayer G, Koroteev Y M, Chulkov E V 2005 Phys. Rev. B 71 195413 Google Scholar
[6]	赵林, 刘国东, 周兴江 2021 70 017406 Google Scholar Zhao L, Liu G D, Zhou X J 2021 Acta Phys. Sin. 70 017406 Google Scholar
[7]	Wang Z F, Liu B, Zhu W 2019 Phys. Rev. Lett. 123 126403 Google Scholar
[8]	Chen G Y, Huang A, Lin Y H, Chen C J, Lin D S, Chang P Y, Jeng H T, Bihlmayer G, Hsu P J 2020 npj Quantum Mater. 5 89 Google Scholar
[9]	Chen R, Lee J, Lee W, Li D 2019 Chem. Rev. 119 9260 Google Scholar
[10]	Weitzel B, Micklitz H 1991 Phys. Rev. Lett. 66 385 Google Scholar
[11]	Dong P, Cheng J, Li Y K 2019 Mater. Res. Bull. 111 154 Google Scholar
[12]	Xiao S H, Wei D H, Jin X F 2012 Phys. Rev. Lett. 109 166805 Google Scholar
[13]	Kowalczyk P J, Mahapatra O, Brown S A, Bian G, Wang X, Chiang T C 2013 Nano Lett. 13 43 Google Scholar
[14]	Heremans J P, Thrush C M, Morelli D T, Wu M C 2002 Phys. Rev. Lett. 88 216801 Google Scholar
[15]	Roushan P, Seo J, Parker C V, Hor Y S, Hsieh D, Qian D, Richardella A, Hasan M Z, Cava R J, Yazdani A 2009 Nature 460 1106 Google Scholar
[16]	Yamada K, Souma S, Yamauchi K, Shimamura N, Sugawara K, Trang C X, Oguchi T, Ueno K, Takahashi T, Sato T 2018 Nano Lett. 18 3235 Google Scholar
[17]	Fang A, Adamo C, Jia S, Cava R J, Wu S C, Felser C, Kapitulnik A 2018 Sci. Adv. 4 eaaq0330 Google Scholar
[18]	孟雨欣, 赵漪凡, 李绍春 2021 70 148101 Google Scholar Meng Y X, Zhao Y F, Li S C 2021 Acta Phys. Sin. 70 148101 Google Scholar
[19]	Reis F, Li G, Dudy L, Bauernfeind M, Glass S, Hanke W, Thomale R, Schafer J, Claessen R 2017 Science 357 287 Google Scholar
[20]	Kawakami N, Lin C L, Kawai M, Arafune R, Takagi N 2015 Appl. Phys. Lett. 107 031602 Google Scholar
[21]	Song F, Wells J W, Jiang Z, Saxegaard M, Wahlstrom E 2015 ACS Appl. Mater. Interfaces 7 8525 Google Scholar
[22]	Gou J, Kong L J, He X Y, Huang Y L, Sun J T, Meng S, Wu K H, Chen L, Wee A T S 2020 Sci. Adv. 6 eaba2773 Google Scholar
[23]	Sun J T, Huang H, Wong S L, Gao H J, Feng Y P, Wee A T S 2012 Phys. Rev. Lett. 109 246804 Google Scholar
[24]	Zhang K H L, McLeod I M, Lu Y H, Dhanak V R, Matilainen A, Lahti M, Pussi K, Egdell R G, Wang X S, Wee A T S, Chen W 2011 Phys. Rev. B 83 235418 Google Scholar
[25]	Hu J B, Hu J P, Zhang Z D, Shen K C, Liang Z F, Zhang H, Tian Q W, Wang P, Jiang Z, Huang H, Well J W, Song F 2020 Appl. Surf. Sci. 513 145797 Google Scholar
[26]	Hu J P, Liang Z F, Shen K C, Xie L, Zhang H, Huang C Q, Huang Y B, Huang H, Tang J X, Jiang Z, Yu M, Song F 2021 Nano Res. 14 4704 Google Scholar
[27]	Horcas I, Fernández R, Gómez-Rodríguez J M, Colchero J, Gómez-Herrero J, Baró A M 2007 Rev. Sci. Instrum. 78 013705 Google Scholar
[28]	Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, Singh D J, Fiolhais C 1993 Phys. Rev. B 48 4978
[29]	Liang Z F, Wang Y, Hua C Q, Xiao C C, Chen M G, Jiang Z, Tai R Z, Lu Y H, Song F 2019 Nanoscale 11 14134 Google Scholar
[30]	Blochl P E 1994 Phys. Rev. B 50 17953 Google Scholar
[31]	Kresse G, Joubert D 1999 Phys. Rev. B 59 1758
[32]	郭宇, 周思, 赵纪军 2021 70 027102 Google Scholar Guo Y, Zhou S, Zhao J J 2021 Acta Phys. Sin. 70 027102 Google Scholar
[33]	Dong L, Wang A, Li E, Wang Q, Li G, Huan Q, Gao H J 2019 Chin. Phys. Lett. 36 028102 Google Scholar
[34]	Huang H, Sun J-T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys. 13 20933 Google Scholar
[35]	Yang S, Hu Z P, Wang W H, Cheng P, Chen L, Wu K H 2020 Chin. Phys. Lett. 37 096803 Google Scholar
[36]	Campos L C, Manfrinato V R, Sanchez-Yamagishi J D, Kong J, Jarillo-Herrero P 2009 Nano Lett. 9 2600 Google Scholar
[37]	Zhang S, Song Y, Li H, Li J M, Qian K, Liu C, Wang J O, Qian T, Zhang Y Y, Lu J C 2020 Chin. Phys. Lett. 37 068103 Google Scholar
[38]	Narasimhan S, Vanderbilt D 1992 Phys. Rev. Lett. 69 1564 Google Scholar
[39]	Hanke F, Björk J 2013 Phys. Rev. B 87 235422
[40]	Kawakami N, Lin C L, Kawahara K, Kawai M, Arafune R, Takagi N 2017 Phys. Rev. B 96 205402 Google Scholar
[41]	Chen H H, Su S H, Chang S L, Cheng B Y, Chen S W, Chen H Y, Lin M F, Huang J C A 2015 Sci. Rep. 5 11623 Google Scholar
[42]	Zhou D C, Si N, Jiang B H, Song X F, Huang H, Ji Q M, Niu T C 2019 Adv. Mater. Interfaces 6 1901050 Google Scholar
[43]	He B C, Tian G, Gou J, Liu B X, Shen K C, Tian Q W, Yu Z Q, Song F, Xie H P, Gao Y L 2019 Surf. Sci. 679 147 Google Scholar
[44]	Girard Y, Chacon C, de Abreu G, Lagoute J, Repain V, Rousset S 2013 Surf. Sci. 617 118 Google Scholar
[45]	Walen H, Liu D J, Oh J, Lim H, Evans J W, Kim Y, Thiel P A 2015 J. Chem. Phys. 143 014704 Google Scholar
[46]	Min B K, Deng X, Pinnaduwage D, Schalek R, Friend C M 2005 Phys. Rev. B 72 121410 Google Scholar
[47]	Jewell A D, Tierney H L, Sykes E C H 2010 Phys. Rev. B 82 205401 Google Scholar

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