Polarization-dependent nonlinear optical response in GeSe<sub>2</sub>

Ouyang Hao; Hu Si-Yang; Shen Man-Ling; Zhang Chen-Xi; Cheng Xiang-Ai; Jiang Tian

doi:10.7498/aps.69.20200443

Abstract

Germanium diselenide (GeSe₂), a layered IV-VI semiconductor, has an in-plane anisotropic structure and a wide band gap, exhibiting unique optical, electrical, and thermal properties. In this paper, polarization axis Raman spectrum and linear absorption spectrum are used to characterize the crystal axis orientation and energy band characteristics of GeSe₂ flake, respectively. Based on the results, a micro-domain I scan system is used to study the optical nonlinear absorption mechanism of GeSe₂ near the resonance band. The results show that the nonlinear absorption mechanism in GeSe₂ is a superposition of saturation absorption and excited state absorption, and is strongly dependent on the polarization and wavelength of incident light. Under near-resonance excitation (450 nm), the excited state absorption is more greatly dependent on polarization. With different polarizations of incident light, the modulation depth can be changed from 4.6% to 9.9%; for non-resonant excitation (400 nm), the modulation depth only changes from 7.0% to 9.7%. At the same time, compared with saturation absorption, the polarization-dependent excited state absorption is greatly affected by the distance away from the resonance excitation wavelength.

Keywords:

Authors and contacts

1.
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
2.
State Key Laboratory of Pulsed Power Laser Technology, Changsha 410073, China
3.
Hunan Provincial Key Laboratory of High Energy Laser Technology, Changsha 410073, China

Corresponding author: Jiang Tian, tjiang@nudt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11802339, 11805276, 61805282, 61801498, 11804387, 11902358), the Scientific Researches Foundation of National University of Defense Technology, China (Grant Nos. ZK16-03-59, ZK18-01-03, ZK18-03-36, ZK18-03-22), the Natural Science Foundation of Hunan Province, China (Grant No. 2016JJ1021), the Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology, China (Grant No. SKL2018ZR05), the Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology, China (Grant No. GNJGJS03), the Opening Foundation of State Key Laboratory of Laser Interaction with Matter, China (Grant No. SKLLIM1702), and the Youth Talent Lifting Project, China (Grant No. 17-JCJQ-QT-004)

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References

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Cited By

图 1 (a) GeSe₂原子结构示意图; (b) 机械剥离GeSe₂纳米片的AFM图, 样品的厚度为88 nm; (c) 偏振选择的拉曼光谱, 其中4个拉曼峰位置分别在118, 212, 251, 307 cm^–1; (d)—(g) 4个拉曼峰强度分别对应的极坐标示意图

Figure 1. (a) Schematic diagram of the atomic structure of GeSe₂; (b) AFM image of GeSe₂ flake by mechanical exfoliation. The thickness of the sample is 88 nm; (c) polarization-dependent Raman spectrum. Four Raman peak positions are at 118, 212, 251, 307 cm^–1, respectively; (d)–(g) polar diagrams of the intensity of the four Raman peaks.

DownLoad: Full-Size Img PowerPoint

图 2 线性吸收谱对层状GeSe₂的各向异性能带表征　(a) 0°—180°偏振方向的线性吸收谱, 其中间隔15°; (b) 0°偏振方向的能带确定; 由陶克定理间接得到的能带位置, 其中切线与横坐标交点位置为2.717 eV; (c) 90°偏振方向的能带确定; 由陶克定理间接得到的能带位置, 其中切线与横坐标交点位置为2.7291 eV; (d) 层状GeSe₂的各向异性能带; b轴方向上的带隙最大, 而a轴方向的带隙最小; (e) 层状GeSe₂在400 nm处的各向异性线性吸收率极坐标图; (f) 层状GeSe₂在450 nm处的各向异性线性吸收率极坐标图

Figure 2. Characterization of anisotropic bands of layered GeSe₂ by linear absorption spectrum: (a) Linear absorption spectrum with polarization directions from 0° to 180° with intervals of 15°; (b) the energy band of the 0° polarization direction is determined. The band position obtained indirectly from Tauc’s theorem, where the position of the intersection of the tangent and the abscissa is 2.717 eV; (c) determination of the energy band of the 90° polarization direction. The band position obtained indirectly from Tauc’s theorem, where the position of the intersection of the tangent and the abscissa is 2.7291 eV; (d) anisotropic energy bands of layered GeSe₂. The band gap in the b-axis direction is the largest, and the band gap in the a-axis direction is the smallest; (e) polar graph of anisotropic linear absorptivity of layered GeSe₂ at 400 nm; (f) polar graph of anisotropic linear absorption of layered GeSe₂ at 450 nm.

DownLoad: Full-Size Img PowerPoint

图 3 400 nm非共振激发下不同偏振方向的叠加态吸收实验结果　(a) I扫描实验结果, 圆圈表示实验数据, 实线表示激发态吸收拟合曲线; (b) 偏振相关的非线性调制深度极坐标图; (c) 偏振相关的线性吸收系数α₀变化趋势极坐标图; (d) 偏振相关饱和吸收光强I_1,s极坐标图; (e) 偏振相关的激发态吸收系数β₀变化趋势极坐标图; (f) 激发态吸收的偏振相关饱和光强I_2,s极坐标图

Figure 3. Experimental results of superposition state absorption of different polarization directions under 400 nm non-resonant excitation: (a) Results of the I-scan experiment. The circles indicate the experimental data, and the solid lines indicate the excited state absorption curve; (b) polarization-dependent non-linear modulation depth polar plot; (c) polar plot of the change in polarization-dependent linear absorption coefficient α₀; (d) polarization diagram of polarization-dependent saturated absorption intensity I_1,s; (e) polarization diagram of the polarization-dependent excited state absorption coefficient β₀; (f) polarized graph of polarization-dependent saturation light intensity I_2,s absorbed by the excited state.

DownLoad: Full-Size Img PowerPoint

图 4 450 nm近共振激发下不同偏振方向的叠加态吸收实验结果　(a) I扫描实验结果, 圆圈表示实验数据, 实线表示激发态吸收拟合曲线; (b) 偏振相关的非线性调制深度极坐标图; (c) 偏振相关的线性吸收系数α₀变化趋势极坐标图; (d) 饱和吸收的偏振相关饱和光强I_1,s极坐标图; (e) 偏振相关的激发态吸收系数β₀变化趋势极坐标图; (f) 激发态吸收的偏振相关饱和光强I_2,s极坐标图

Figure 4. Experimental results of superposition state absorption of different polarization directions under 450 nm non-resonant excitation: (a) Results of the I-scan experiment. The circles indicate the experimental data, and the solid lines indicate the excited state absorption curve: (b) polarization-dependent non-linear modulation depth polar plot: (c) polar plot of the change in polarization-dependent linear absorption coefficient α₀; (d) polarization diagram of polarization-dependent saturated absorption intensity I_1,s; (e) polarization diagram of the polarization-dependent excited state absorption coefficient β₀; (f) polarized graph of polarization-dependent saturation light intensity I_2,s absorbed by the excited state.

DownLoad: Full-Size Img PowerPoint

图 5 GeSe₂偏振型全光开关的原理示意图

Figure 5. Schematic diagram of GeSe₂ based polarized-dependent all-optical switching

DownLoad: Full-Size Img PowerPoint

表 1 400 nm非共振激发偏振相关的I扫描非线性叠加态吸收参数的拟合结果

Table 1. Fitting results of I-scan nonlinear superposition state absorption parameters related to 400 nm non-resonant excitation polarization

Polarization/(°)	α₀/cm^–1	β₀/cm·GW^–1	I_1,s/GW·cm^–2	I_2,s/GW·cm^–2	δT/%
0	31559	508	15947	41	7.0
30	33593	559	7962	38	7.5
60	36579	606	972	35	8.2
90	38790	663	349	34	9.7
120	36972	599	1394	36	8.1
150	34029	543	6629	39	7.3
180	31062	496	17082	41	7.0

DownLoad: CSV

表 2 450 nm近共振激发偏振相关的I扫描非线性叠加态吸收参数的拟合结果

Table 2. Fitting results of I-scan nonlinear superposition state absorption parameters related to 450 nm non-resonant excitation polarization

Polarization/(°)	α₀/cm^–1	β₀/cm·GW^–1	I_1,s/GW·cm^–2	I_2,s/GW·cm^–2	δT/%
0	43909	175	9390	63	4.6
30	49631	157	1258	69	5.6
60	60289	65	409	75	7.1
90	67501	22	188	79	9.9
120	57266	81	469	76	6.8
150	48345	158	2333	68	5.0
180	43173	176	10483	62	4.6

DownLoad: CSV

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[2]	Jiang T, Liu H, Huang D, Zhang S, Li Y, Gong X, Shen Y R, Liu W T, Wu S 2014 Nat. Nanotechnol. 9 825 Google Scholar
[3]	Zhang J, Ouyang H, Zheng X, You J, Chen R, Zhou T, Sui Y, Liu Y, Cheng X, Jiang T 2018 Opt. Lett. 43 243 Google Scholar
[4]	Wang R, Ruzicka B A, Kumar N, Bellus M Z, Chiu H Y, Zhao H 2012 Phys. Rev. B 86 045406 Google Scholar
[5]	令维军, 夏涛, 董忠, 刘勍, 路飞平, 王勇刚 2017 66 114207 Google Scholar Ling W J, Xia T, Dong Z, Liu Q, Lu F P, Wang Y G 2017 Acta Phys. Sin. 66 114207 Google Scholar
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[10]	Zhang J, Jiang T, Zhou T, Ouyang H, Zhang C X, Xin Z, Wang Z Y, Cheng X a 2018 Photonics Res. 6 14 Google Scholar
[11]	Jiang T, Miao R, Zhao J, Xu Z, Zhou T, Wei K, You J, Zheng X, Wang Z, Cheng X A 2019 Chin. Opt. Lett. 17 020005 Google Scholar
[12]	刘畅, 刘祥瑞 2019 68 175 Google Scholar Liu C, Liu X R 2019 Acta Phys. Sin. 68 175 Google Scholar
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[14]	Youngblood N, Peng R, Nemilentsau A, Low T, Li M 2016 ACS Photonics 4 8 Google Scholar
[15]	Zhou Y, Zhang M, Guo Z, Miao L, Han S-T, Wang Z, Zhang X, Zhang H, Peng Z 2017 Mater. Horiz. 4 997 Google Scholar
[16]	Bao Q, Loh K P 2012 ACS Nano 6 3677 Google Scholar
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[18]	Guo B, Xiao Q L, Wang S H, Zhang H 2019 Laser Photonics Rev. 13 1800327 Google Scholar
[19]	Yang Y, Wang X, Liu S C, Li Z, Sun Z, Hu C, Xue D J, Zhang G, Hu J S 2019 Adv. Sci. 6 1801810 Google Scholar
[20]	Xia F, Wang H, Jia Y 2014 Nat. Commun. 5 4458 Google Scholar
[21]	Zheng J, Yang Z, Si C, Liang Z, Chen X, Cao R, Guo Z, Wang K, Zhang Y, Ji J, Zhang M, Fan D, Zhang H 2017 ACS Photonics 4 1466 Google Scholar
[22]	Tan D Z, Lim H E, Wang F, Mohamed N B, Mouri S, Zhang W J, Miyauchi Y H, Ohfuchi M, Matsuda K 2016 Nano Res. 10 546 Google Scholar
[23]	黄多辉, 万明杰, 王藩侯, 杨俊升, 曹启龙, 王金花 2016 65 063102 Google Scholar Huang D H, Wan M J, Wang F H, Yang J S, Cao Q L, Wang J H 2016 Acta Phys. Sin. 65 063102 Google Scholar
[24]	Zhang C X, Ouyang H, Miao R L, Sui Y Z, Hao H, Tang Y X, You J, Zheng X, Xu Z J, Cheng X A, Jiang T 2019 Adv. Opt. Mater. 7 1900631 Google Scholar
[25]	Aslan O B, Chenet D A, van der Zande A M, Hone J C, Heinz T F 2015 ACS Photonics 3 96 Google Scholar
[26]	Zhao H, Wu J, Zhong H, Guo Q, Wang X, Xia F, Yang L, Tan P, Wang H 2015 Nano Res. 8 3651 Google Scholar
[27]	Jang H, Ryder C R, Wood J D, Hersam M C, Cahill D G 2017 Adv. Mater. 29 1700650 Google Scholar
[28]	Villegas C E P, Rocha A R, Marini A 2016 Phys. Rev. B 94 134306 Google Scholar
[29]	Lin Y C, Komsa H P, Yeh C H, Bjorkman T, Liang Z Y, Ho C H, Huang Y S, Chiu P W, Krasheninnikov A V, Suenaga K 2015 ACS Nano 9 11249 Google Scholar
[30]	Gomes L C, Trevisanutto P E, Carvalho A, Rodin A S, Castro Neto A H 2016 Phys. Rev. B 94 155428 Google Scholar
[31]	魏钟鸣, 夏建白 2019 68 48 Google Scholar Wei Z M, Xia J B 2019 Acta Phys. Sin. 68 48 Google Scholar
[32]	Zhou X, Hu X, Zhou S, Zhang Q, Li H, Zhai T 2017 Adv. Funct. Mater. 27 1703858 Google Scholar
[33]	Yang Y, Liu S C, Yang W, Li Z, Wang Y, Wang X, Zhang S, Zhang Y, Long M, Zhang G, Xue D J, Hu J S, Wan L J 2018 J. Am. Chem. Soc. 140 4150 Google Scholar
[34]	Yan Y, Xiong W, Li S, Zhao K, Wang X, Su J, Song X, Li X, Zhang S, Yang H, Liu X, Jiang L, Zhai T, Xia C, Li J, Wei Z 2019 Adv. Opt. Mater. 7 1900622 Google Scholar
[35]	Cao M, Cheng B, Xiao L, Zhao J, Su X, Xiao Y, Lei S 2015 J. Mater. Chem. C 3 5207 Google Scholar
[36]	Ling X, Huang S, Hasdeo E H, Liang L, Parkin W M, Tatsumi Y, Nugraha A R, Puretzky A A, Das P M, Sumpter B G, Geohegan D B, Kong J, Saito R, Drndic M, Meunier V, Dresselhaus M S 2016 Nano Lett. 16 2260 Google Scholar
[37]	Yang S, Liu Y, Wu M, Zhao L D, Lin Z, Cheng H C, Wang Y, Jiang C, Wei S-H, Huang L, Huang Y, Duan X 2017 Nano Res. 11 554 Google Scholar
[38]	Wu L, Patankar S, Morimoto T, Nair N L, Thewalt E, Little A, Analytis J G, Moore J E, Orenstein J 2016 Nat. Phys. 13 350 Google Scholar
[39]	Zhang S, Dong N, McEvoy N, O’Brien M, Winters S, Berner N C, Yim C, Li Y, Zhang X, Chen Z, Zhang L, Duesberg G S, Wang J 2015 ACS Nano 9 7142 Google Scholar
[40]	刘丰, 邢岐荣, 胡明列, 栗岩锋, 王昌雷, 柴路, 王清月 2011 60 704 Google Scholar Liu F, Xing Q R, Hu M L, Li Y F, Wang C L, Chai L, Wang Q Y 2011 Acta Phys. Sin. 60 704 Google Scholar
[41]	Meng X, Zhou Y, Chen K, Roberts R H, Wu W, Lin J F, Chen R T, Xu X, Wang Y 2018 Adv. Opt. Mater. 6 1800137 Google Scholar
[42]	Chen H, Wang C, Ouyang H, Song Y, Jiang T 2020 NanophotonicsGoogle Scholar
[43]	Wang K, Chen Y, Zheng J, Ge Y, Ji J, Song Y, Zhang H 2019 Nanotechnol. 30 415202 Google Scholar
[44]	Song Y, Chen Y, Jiang X, Liang W, Wang K, Liang Z, Ge Y, Zhang F, Wu L, Zheng J, Ji J, Zhang H 2018 Adv. Opt. Mater. 6 1701287 Google Scholar

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Vol. 69, Issue 18 - 2020-09-20

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Polarization-dependent nonlinear optical response in GeSe₂

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Polarization-dependent nonlinear optical response in GeSe2

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Polarization-dependent nonlinear optical response in GeSe₂