Review of charge deposition characteristics and trap parameters of dielectric in space electron radiation environment

Li Guo-Chang; Li Sheng-Tao

doi:10.7498/aps.68.20191252

Abstract

Charging and discharging characteristics of dielectric in space electron radiation environment are closely related to the surface charge exchange process and internal charge transfer process. Surface or internal charge movement of dielectric depends largely on the microscopic characteristics of the material, and space charge and trap are important parameters reflecting the microscopic characteristics of dielectric. In this work, the formation, mechanism, measurement method, existing problems and research status of space charge and trap in insulation material in electronic radiation environment are reviewed. Firstly, the interaction mechanism between incident electron and dielectric material and the formation of deposition charge are briefly introduced. The advantages and disadvantages of radiation-induced conductance model and electron-hole pair generation/recombination model are analyzed. The classical electro-acoustic pulse method (PEA) and " short circuit PEA” and " open circuit PEA” which are suitable for space charge measurement under electron beam radiation are compared with each other and analyzed, and further, the main technical difficulties in designing PEA device under electron beam radiation are reviewed. Secondly, the methods of extracting trap parameters, including thermal stimulation current method, surface potential decay method, space charge decay method are compared with each other. It is pointed out that the method of injecting the electrons and the method of measuring the surface potential in the same vacuum environment are more suitable for measuring the trap parameters of space dielectric materials. Finally, the scientific problems that need solving in space insulation are prospected from the aspects of theoretical model, parameter characterization and measurement technology.

Keywords:

Authors and contacts

Li Guo-Chang^1,2,
Li Sheng-Tao²

1.
Institute of Advanced Electrical Materials, Qingdao University of Science and Technology, Qingdao 266042, China
2.
State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China

Corresponding author: Li Sheng-Tao, sli@mail.xjtu.edu.cn

Funds: Project supported by National Natural Science Foundation of China (Grant Nos. 51907095, 11575140), the China Postdoctoral Science Foundation (Grant No. 2019M653629), and the Qingdao Applied Foundation Basic Research Program, China (Grant No. 18-2-2-23-jch)

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References

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[31]	曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 62 149402 Google Scholar Cao H F, Liu S H, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 149402 Google Scholar
[32]	曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 62 149401 Google Scholar Cao H F, Liu S F, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 149401 Google Scholar
[33]	范亚杰, 张希军, 孙永卫, 周立栋 2018 强激光与粒子束 30 114002 Fan Y J, Sun X J, Sun Y W, Zhou L D 2018 High Power Laser and Particle Beams. 30 114002
[34]	Li G C, Li S T, Pan S M, Min D M 2016 IEEE Trans. Dielectr. Electr. Insul. 23 2393 Google Scholar
[35]	Min D M, Cho M, Li S T 2012 IEEE Trans. Dielectr. Electr. Insul. 19 2206 Google Scholar
[36]	Baudoin F, Le Roy S, Teyssedre G 2008 J. Phys. D: Appl. Phys. 41 025306 Google Scholar
[37]	Le Roy S, Baudoin F, Griseri V, Laurent C, Teyssedre G 2010 J. Phys. D: Appl. Phys. 43 315402 Google Scholar
[38]	Le Roy S, Baudoin F, Griseri V 2012 J. Appl. Phys. 112 023704 Google Scholar
[39]	Teyssedre G, Laurent C 2005 IEEE Trans. Dielectr. Electr. Insul. 12 857 Google Scholar
[40]	Boufayed F, Teyssèdre G, Laurent C 2006 J. Appl. Phys. 100 104105 Google Scholar
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[47]	Wei Y H, Chen G, Zhang G J, Liu N, Li G C 2016 AIP Adv. 6 075120 Google Scholar
[48]	张振军, 苗军, 王学强, 吴文斌, 杨沛, 郑晓泉 2014 高电压技术 40 117 Zhang Z J, Miao J, Wang X Q, Wu W B, Yang P, Zheng X Q 2014 High Voltage Engineering 40 117

Cited By

图 1 入射电子与介质材料相互作用及能量损失示意图　(a) 入射电子与介质材料相互作用示意图; (b)阻止能量与穿透深度关系图

Figure 1. Schematic diagram of interaction between incident electron and dielectric material and energy loss: (a) Interaction between incident electron and dielectric material; (b) diagram of stopping power and penetration depth.

DownLoad: Full-Size Img PowerPoint

图 2 典型绝缘介质内部电荷沉积速率分布

Figure 2. The charge deposition rate distributions in typical insulation dielectric.

DownLoad: Full-Size Img PowerPoint

图 3 电子束辐射下介质内部电荷迁移模型示意图　(a) RIC模型; (b) GR模型

Figure 3. Schematic diagram of charge transfer model under electron beam radiation: (a) RIC model; (b) GR model.

DownLoad: Full-Size Img PowerPoint

图 4 电子辐射处理后PI空间电荷衰减曲线　(a) 电子辐射处理试样上表面; (b) 电子辐射处理试样下表面

Figure 4. Space charge decay curve of polyimide treated by electron radiation treatment: (a) The upper surface of the sample is treated; (b) the bottom surface of the sample is treated.

DownLoad: Full-Size Img PowerPoint

图 5 电子束辐射下绝缘介质空间电荷原位测量装置示意图　(a) 短路PEA; (b) 开路PEA

Figure 5. Schematic diagram of space charge in situ measurement setup under electron beam radiation: (a) Short circuit PEA; (b) open circuit PEA.

DownLoad: Full-Size Img PowerPoint

图 6 电子辐射下绝缘介质表面电位测量系统

Figure 6. Surface potential measuring system of insulation under electron radiation.

DownLoad: Full-Size Img PowerPoint

图 7 不同能量电子辐射下PI陷阱能谱分布图^[34]

Figure 7. Trap energy spectrum distribution of PI under electron radiation with different energies^[34].

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表 1 绝缘介质陷阱参数提取方法对比

Table 1. Comparison of calculation methods of trap parameters.

方法	基本原理	优缺点
等温表面电位衰减法(ISPD)	采用电晕注入或电子辐射方式向介质表层注入电荷, 通过测量等温电位衰减曲线, 提取陷阱参数.	优点: 可以区分电子陷阱和空穴陷阱^[39,45]; 电子辐射注入方式更适合空间介质材料陷阱参数的测量^[28,34]. 缺点: 电荷注入深度较浅(约1—2 μm), 主要反映材料表面或表层陷阱信息; 不适用于较厚试样^[46].
热刺激电流法(TSC)	采用热刺激或光刺激使介质内部被捕获电荷脱陷, 通过分析电流特征峰, 提取陷阱参数.	优点: 反映材料内部陷阱信息; 可以区分陷阱能级^[39,47]. 缺点: 无法区分陷阱类型.
电声脉冲法(PEA)	通过分析去压后总电荷量随时间的衰减规律, 提取陷阱参数.	优点: 可以反映介质内部电荷动态过程^[9,10,47]. 缺点: 无法区分陷阱类型; 计算模型有待完善.

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[1]	Lai S T 2011 Fundamentals of Spacecraft Charging (New Jersey: Princeton University Press) pp156–167
[2]	黎树添著 (李盛涛, 郑晓泉, 陈玉, 闵道敏译) 2015 航天器带电原理 (北京: 科学出版社) 第 135—141页 Lai S T (translated by Li S T, Zheng X Q, Chen Y, Min D M) 2015 Fundamentals of Spacecraft Charging (Beijing: Science Press) pp135–141 (in Chinese)
[3]	Gupta S B, Kalaria K R, Vaghela N P 2014 IEEE Trans. Plasma Sci. 42 1072 Google Scholar
[4]	李盛涛, 李国倡 2017 科学通报 62 990 Li S T, Li G C 2017 Chin. Sci. Bull. 62 990
[5]	Koons H C, Mazur J E, Selesnick R S, Blake J B, Frnnell J F, Rober J L, Anderson P C 2000 6th Spacecraft Charging Technology Conference Massachusetts, United States, Sep. 1–4, 2000 p7
[6]	周远翔, 王宁华, 王云杉, 孙清, 梁曦东, 关志成 2008 电工技术学报 23 16 Google Scholar Zhou Y X, Wang N H, Wang Y S, Sun Q, Liang X D, Guan Z C 2008 Transactions of China Electrotechnical Society 23 16 Google Scholar
[7]	辛正亮, 吴广宁, 徐慧慧, 罗杨, 曹开江 2011 绝缘材料 44 59 Google Scholar Xin X L, Wu G N, Xu H H, Luo Y, Cao K J 2011 Insulating Materials 44 59 Google Scholar
[8]	李国倡, 李盛涛, 闵道敏, 朱远惟 2013 中国科学 43 375 Li G C, Li S T, Min D M, Zhu Y W 2013 Sci. China 43 375
[9]	廖瑞金, 周天春, Chen G, 杨丽君 2012 61 017201 Google Scholar Liao R J, Zhou T C, Chen G, Yang L J 2012 Acta Phys. Sin. 61 017201 Google Scholar
[10]	Zhou T C, Chen G, Liao R J, Xu Z Q, 2009 J. Appl. Phys. 110 043724
[11]	Laurent C, Teyssedre G, Le R S, Baudoin F 2013 IEEE Trans. Dielectr. Electr. Insul. 20 357 Google Scholar
[12]	杨百屯, 屠德民, 刘耀南 1992 应用科学学报 10 233 Yang B T, Tu D M, Liu Y N 1992 J. Appl. Phys. 10 233
[13]	Haque N, Dalai S, Chatterjee B, Chakravorti S 2017 IEEE Trans. Electr. Insul. 24 1896 Google Scholar
[14]	Din D M, Mengu C, Arifur R K, Li S T 2012 IEEE Trans. Dielectr. Electr. Insul. 19 600 Google Scholar
[15]	Severine L R, Teyssedre G, Laurent C, Segur P 2006 J. Phys. D: Appl. Phys. 39 298
[16]	Perrin C, Griseri V, Laurent C, Fukunaga K, Maeno T, Levy L, Payan D, Schwander D 2008 High Performance Polymers 20 535 Google Scholar
[17]	Perrin C, Griseri V, Laurent C, Fukunaga K 2008 IEEE Trans. Dielectr. Electr. Insul. 15 958 Google Scholar
[18]	Griseri V, Fukunaga K, Maeno T, Laurent C, Levy L 2004 IEEE Trans. Dielectr. Electr. Insul. 11 891 Google Scholar
[19]	Hodges J L, Dennison J R, Dekany J, Wilson G, Evans A, Sim A 2014 IEEE Trans. Plasma Sci. 42 255 Google Scholar
[20]	Dennison J R, Brunson J, Swaminathan P, Green N W, Frederickson A R 2006 IEEE Trans. Plasma Sci. 34 2191 Google Scholar
[21]	黄建国, 陈东 2004 地球 47 392 Google Scholar Huang J G, Chen D 2004 Chin. J. Geophys. 47 392 Google Scholar
[22]	黄建国, 陈东 2004 53 961 Google Scholar Huang J G, Chen D 2004 Acta Phys. Sin. 53 961 Google Scholar
[23]	全荣辉, 韩建伟, 张振龙 2013 64 245205 Google Scholar Quan R H, Han J W, Zhang Z L 2013 Acta Phys. Sin. 64 245205 Google Scholar
[24]	秦晓刚, 贺德衍, 王骥 2009 58 684 Google Scholar Qin X G, He D Y, Wang J 2009 Acta Phys. Sin. 58 684 Google Scholar
[25]	陈益峰, 杨生胜, 秦晓刚, 柳青, 史亮, 孔风连, 汤道坦, 李存惠 2010 真空与低温 16 167 Chen Y F, Yang S S, Qin X G, Liu Q, Shi L, Kong F L, Tang D T, Li C H 2010 Vacuum and Cryogenics 16 167
[26]	李盛涛, 李国倡, 闵道敏, 赵妮 2013 62 059401 Google Scholar Li S T, Li G C, Min D M, Zhao N 2013 Acta Phys. Sin. 62 059401 Google Scholar
[27]	李国倡, 闵道敏, 李盛涛, 郑晓泉, 茹佳胜 2014 63 209401 Google Scholar Li G C, Min D M, Li S T, Zheng X Q, Ru J S 2014 Acta Phys. Sin. 63 209401 Google Scholar
[28]	李国倡 2017 博士学位论文 (西安: 西安交通大学) Li G C 2017 Ph. D. Dissertation (Xi’an: Xi’an Jiaotong University) (in Chinese)
[29]	李维勤, 郝杰, 张海波 2015 64 086801 Google Scholar Li W Q, Hao J, Zhang H B 2015 Acta Phys. Sin. 64 086801 Google Scholar
[30]	易忠, 王松, 唐小金, 武占成, 张超 2015 64 125201 Google Scholar Yi Z, Wang S, Tang X J, Wu Z C, Zhang C 2015 Acta Phys. Sin. 64 125201 Google Scholar
[31]	曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 62 149402 Google Scholar Cao H F, Liu S H, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 149402 Google Scholar
[32]	曹鹤飞, 刘尚合, 孙永卫, 原青云 2013 62 149401 Google Scholar Cao H F, Liu S F, Sun Y W, Yuan Q Y 2013 Acta Phys. Sin. 62 149401 Google Scholar
[33]	范亚杰, 张希军, 孙永卫, 周立栋 2018 强激光与粒子束 30 114002 Fan Y J, Sun X J, Sun Y W, Zhou L D 2018 High Power Laser and Particle Beams. 30 114002
[34]	Li G C, Li S T, Pan S M, Min D M 2016 IEEE Trans. Dielectr. Electr. Insul. 23 2393 Google Scholar
[35]	Min D M, Cho M, Li S T 2012 IEEE Trans. Dielectr. Electr. Insul. 19 2206 Google Scholar
[36]	Baudoin F, Le Roy S, Teyssedre G 2008 J. Phys. D: Appl. Phys. 41 025306 Google Scholar
[37]	Le Roy S, Baudoin F, Griseri V, Laurent C, Teyssedre G 2010 J. Phys. D: Appl. Phys. 43 315402 Google Scholar
[38]	Le Roy S, Baudoin F, Griseri V 2012 J. Appl. Phys. 112 023704 Google Scholar
[39]	Teyssedre G, Laurent C 2005 IEEE Trans. Dielectr. Electr. Insul. 12 857 Google Scholar
[40]	Boufayed F, Teyssèdre G, Laurent C 2006 J. Appl. Phys. 100 104105 Google Scholar
[41]	刘晓东, 郑晓泉, 张要强, 杨生胜, 秦晓刚, 王立 2007 电工电能新技术 26 55 Google Scholar Liu X D, Zheng X Q, Zhang Y Q, Yang S S, Qin X G, Wang L 2007 Electrical and Electrical Technology 26 55 Google Scholar
[42]	马丽婵, 郑晓泉, 刘晓东, 张要强 2007 中国电机工程学报 27 32 Google Scholar Ma L C, Zheng X Q, Liu X D, Zhang Y Q, Ma L C 2007 Proc. CSEE 27 32 Google Scholar
[43]	Li G C, Li S T, Pan S M 2016 IEEE Trans. Dielectr. Electr. Insul. 23 1846 Google Scholar
[44]	高宇, 王小芳, 李楠, 许棒棒, 王继隆, 杜伯学 2019 高电压技术 45 2219 Gao Y, Wang X F, Li N, Xu B B, Wang J L, Du B X 2019 High Voltage 45 2219
[45]	Shen W W, Mu H B, Zhang G J 2013 J. Appl. Phys. 113 083706 Google Scholar
[46]	Simmons J G, Tam M C 1973 Phys. Rev. B 7 3706 Google Scholar
[47]	Wei Y H, Chen G, Zhang G J, Liu N, Li G C 2016 AIP Adv. 6 075120 Google Scholar
[48]	张振军, 苗军, 王学强, 吴文斌, 杨沛, 郑晓泉 2014 高电压技术 40 117 Zhang Z J, Miao J, Wang X Q, Wu W B, Yang P, Zheng X Q 2014 High Voltage Engineering 40 117

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Vol. 68, Issue 23 - 2019-12-05

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