Ultrafast pulse lasers based on two-dimensinal nanomaterials

Wang Cong; Liu Jie; Zhang Han

doi:10.7498/aps.68.20190751

Abstract

Ultrafast pulse laser has been widely used in many fields, such as optical communications, military and materials processing. Semiconductor saturable absorber mirror (SESAM) serving as a saturable absorber is an effective way to obtain ultrafast pulse laser with ps-level pulse width. The SESAM needs specially designing to meet different wavelength operations. And the low damage threshold and high fabrication cost of SESAM hinder its development. Exploring novel materials is becoming a hot topic to overcome these drawbacks and obtain ultrafast laser with excellent performance. The discovery of graphene opens the door for two-dimensional nanomaterials due to the unique photoelectric properties of layered materials. Subsequently, two-dimensional (2D) materials such as topological insulators, transition metal sulfides, and black phosphorus are reported. These materials are used as saturable absorber to obtain a pulsed laser. In this paper, we summarize the research status of fiber lasers and solid-state lasers based on 2D materials in recent years. The development status of the lasers in terms of central wavelength, pulse width, repetition frequency, pulse energy and output power are discussed. Finally, the summary and outlook are given. We believe that nonlinear optical devices based on 2D materials will be rapidly developed in the future several decades

Keywords:

Authors and contacts

1.
School of Physics and Electronics, Shandong Normal University, Jinan 250014, china
2.
College of Optoelectronics Engineering, Shenzhen University, Shenzhen 518060, China

Corresponding author: Liu Jie, jieliu@sdnu.edu.cn ; Zhang Han, hzhang@szu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61875138), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61705140), and the China Postdoctoral Science Foundation (Grant No. 2018M643165).

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Cited By

图 1 不同类型的二维纳米材料示意图^[7]

Figure 1. Schematic illustration of different kinds of typical ultrathin two-dimensional nanomaterials ^[7].

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图 2 石墨烯(a), (b) ^[8], MoS₂ (c), (d) ^[8], Bi₂Se₃ (e), (f) ^[10]和BP (g), (h)^[8]的原子结构和带隙结构

Figure 2. Atomic structures and band structures of graphene (a), (b) ^[8], MoS₂ (c), (d) ^[8], Bi₂Se₃ (e), (f)^[10] and BP (g), (h)^[8]. Reprinted by permission from Ref. [8]. Copyright 2014 Nature Publishing Group. Reprinted by permission from Ref. [10]. Copyright 2009 Nature Publishing Group.

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图 3 二维材料的制备方法

Figure 3. Fabrication methods of two-dimensional materials.

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图 4 　(a) Z-scan法实验装置^[18]; (b) 双臂测量法实验装置^[19]

Figure 4. (a) Schematic of the Z-scan measurement setup with permission from Ref. [18] © The Optical Society. (b) Schematic of the two-arm measurement setup. Reprinted by permission from Ref. [19]. Copyright 2017 Nature Publishing Group.

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图 5 二维材料的耦合方式　(a) 二维材料转移至石英片上; (b) 二维材料转移至高反镜上; (c) 三明治结构, 二维材料转移至光纤端面 (d)、锥形光纤(e)和D型光纤(f)

Figure 5. Incorporation schemes for two-dimensional materials: (a) Transferring two-dimensional materials on quartz; (b) transferring two-dimensional materials on high reflection mirror; (c) sandwiching structure; transferring or depositing SA on (d) fiber end, (e) tapered fiber and (f) D-typed fiber.

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图 6 　(a) 光纤激光器的脉宽和重复频率分布图; (b) 种子源和压缩脉冲的自相关曲线^[20]; (c), (d) 212阶谐波锁模脉冲输出序列和自相关曲线^[21]; (e), (f)锁模脉冲序列和自相关曲线^[103]

Figure 6. (a) Scattergram of pulse width and repetition rate of fiber lasers. (b) Intensity autocorrelation trace, fitted with a sech² profile. Both seed and compressed traces are normalized to 1. Selected from Ref. [20]. (c) Measured oscilloscope traces of the 212th-harmonic-output optical pulses with permission from Ref. [21] © The Optical Society. (d) Measured autocorrelation traces of the output pulses at the maximum harmonic order with permission from Ref. [21] © The Optical Society. (e) Typical oscilloscope pulse trains of mode-locking. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verlag. (f) Autocorrelation trace with a sech² fitting. Reprinted by permission from Ref. [103]. Copyright 2018 Wiley-VCH Verla.

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图 7 (a) 黑磷纳米片溶液; (b) 黑磷饱和吸收体的非线性曲线; (c) Ho³⁺/Pr³⁺共掺的被动锁模光纤激光器; (d)锁模脉冲的自相关曲线^[179]

Figure 7. (a) Layered BP solution; (b) nonlinear transmission of BP SA; (c) passively mode-locked Ho³⁺/Pr³⁺ co-doped fluoride fiber laser; (d) autocorrelation trace of the mode-locked pulses. Reprinted by permission from Ref. [179]. Copyright 2016 Nature Publishing Group.

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表 1 基于石墨烯、TIs、TMDs、BP的锁模光纤激光器的性能总结

Table 1. Performance summary of mode-locked fiber lasers based on graphene, TIs, TMDs and BP.

Material type		Fabrication method	λ/nm	Pulse width	Repetition rate	Energy	Ref.
G	G	CVD	1069.8	580 ps	0.9 MHz	0.41 nJ	[26]
		CVD	1559.12	432.47 fs	25.51 MHz	0.09 nJ	[27]
		CVD	1565.3	148 fs	101 MHz	15 pJ	[28]
		CVD	1545	88 fs	21.15 MHz	71 pJ	[29]
		CVD	1531.3	1.21 ps	1.88 MHz	—	[30]
		CVD	1559.34	345 fs	54.28 MHz	38.7 pJ	[31]
		CVD	1561	1.23 ps	2.54 MHz	—	[32]
		CVD	1576	415 fs	6.84 MHz	7.3 nJ	[33]
		LPE	1550	29 fs	18.67 MHz	2.8 nJ	[20]
		ME	1567	220 fs	15.7 MHz	83 pJ	[34]
		—	1554	168 fs	63 MHz	55 pJ	[35]
		ME	1560	900 fs	2.22 GHz	—	[22]
		—	1560	992 fs	0.49 GHz	—	[36]
		LPE	1525—1559	1 ps	8 MHz	125 pJ	[37]
		CVD	1945	205 fs	58.87 MHz	220 pJ	[38]
		—	2060	190 fs	20.98 MHz	2.55 nJ	[39]
		CVD	2780	42 ps	25.4 MHz	0.7 nJ	[40]
	GO	—	1556.5	615 fs	17.09 MHz	—	[41]
	Graphene-Bi₂Te₃	CVD	1565.6	1.17 ps	6.91 MHz	—	[42]
TIs	Bi₂Se₃	PM	1031.7	46 ps	44.6 MHz	0.76 nJ	[43]
		PM	1600	360 fs	35.45 MHz	24.3 pJ	[44]
		PM	1557.5	660 fs	12.5 MHz	0.14 nJ	[45]
		LPE	1571	579 fs	12.54 MHz	127 pJ	[46]
		LPE	1559	245 fs	202.7 MHz	37 nJ	[47]
		HM	1610	0.7 ns	640.9 MHz	481 pJ	[48]
		PM	1557—1565	1.57 ps	1.21 MHz	—	[49]
		LPE	1567/1568	22 ps	8.83 MHz	1.1 nJ	[50]
	Bi₂Te₃	ME	1057.82	230 ps	1.44 MHz	0.6 nJ	[51]
		HM	1064.47	960 ps	1.11 MHz	—	[52]
		ME	1547	600 fs	15.11 MHz	53 pJ	[53]
		PLD	1560.8	286 fs	18.55 MHz	0.03 nJ	[54]
		HM	1557	1100 fs	8.635 MHz	29 pJ	[55]
		PLD	1562.4	320 fs	2.95 GHz	—	[24]
		—	1557.4	3.42 ps	388 MHz	—	[56]
		ME	1935	795 fs	27.9 MHz	36 pJ	[57]
		—	1909.5	1.26 ps	21.5 MHz	—	[58]
	Sb₂Te₃	LPE	1556	449 fs	22.13 MHz	39.6 pJ	[59]
		ME	1564	125 fs	22.4 MHz	44.6 pJ	[60]
		ME	1561	270 fs	34.58 MHz	0.03 nJ	[61]
		DFT	1568.6	195 fs	33 MHz	0.27 nJ	[62]
		ME	1565	128 fs	22.32 MHz	45 pJ	[15]
		MS	1558	167 fs	25.38 MHz	0.21 nJ	[63]
		PLD	1542	70 fs	95.4 MHz	—	[23]
TMDs	WS₂	MS	1560	288 fs	41.4 MHz	0.04 pJ	[64]
		LPE	1550	595 fs	—	—	[65]
		PLD	1560	220 fs	—	—	[66]
		LPE	1561/1563	369/563	24.93/20.39 MHz	70/136 pJ	[67]
		CVD	1565	332 fs	31.11 MHz	14 pJ	[68]
		PLD	1559.7	452 fs	1.04 GHz	10.9 pJ
		PLD	1558.54	585—605 fs	8.83 MHz	1.14 nJ	[66]
		LPE	1941	1.3 ps	34.8 MHz	172 pJ	[69]
	MoS₂	HM	1054.3	800 ps	7 MHz	1.3 nJ	[70]
		HM	1569.5	710 fs	12.09 MHz	0.147 nJ	[71]
		ME	1550	200 fs	14.53 MHz	—	[72]
		PLD	1561	246 fs	101.4 MHz	1.2 nJ	[73]
		LPE	1573.7	630 fs	27.1 MHz	0.141 nJ	[74]
		HM	1556.8	3 ps	2.5 GHz	2 pJ	[75]
		LPE	1530.4	1.2 ps	125 MHz	344 pJ	[76]
		LPE	1555.6	737 fs	3.27 GHz	7 pJ	[21]
		LPE	1535—1565	0.96—7.1 ps	12.99 MHz	—	[77]
		MS	1915.5	1.25 ps	18.72 MHz	—	[78]
	WSe₂	CVD	1557.4	163.5 fs	63.13 MHz	451 pJ	[79]
	WSe₂	CVD	1863.96	1.16 ps	11.36 MHz	2.9 nJ	[80]
	MoSe₂	LPE	1912	920 fs	18.21 MHz	—	[81]
	SnS₂	LPE	1062.66	656 ps	39.33 MHz	57 pJ	[82]
	SnS₂	LPE	1562.01	623 fs	29.33 MHz	41 pJ	[83]
	ReS₂	CVD	1564	1.25 ps	3.43 MHz	—	[84]
	ReS₂	LPE	1558.6	1.6 ps	5.48 MHz	73 pJ	[85]
BP		ME	1085.5	7.54 ps	13.5 MHz	5.93 nJ	[86]
		LPE	1030.6	400 ps	46.3 MHz	0.70 nJ	[87]
		LPE	1555	102 fs	23.9 MHz	0.08 nJ	[25]
		LPE	1562	1236 fs	5.426 MHz	—	[88]
		LPE	1549—1575	280 fs	60.5 MHz	—	[89]
		ME	1560.7	570 fs	6.88 MHz	0.74 nJ	[16]
		LPE	1559.5	670 fs	8.77 MHz	—	[90]
		ME	1558.7	786 fs	14.7 MHz	0.11 nJ	[91]
		ME	1571.4	946 fs	5.96 MHz	—	[14]
		ME	1560.5	272 fs	28.2 MHz	2.3 nJ	[92]
		LPE	1532—1570	940 fs	4.96 MHz	1.1 nJ	[93]
		LPE	1562.8	291 fs	10.36 MHz	—	[94]
		LPE	1562	635 fs	12.5 MHz	—	[95]
		LPE	1555	687 fs	37.8 MHz	—	[96]
		LPE	1561.7	882 fs	5.47 MHz	—
		LPE	1533	—	20.82 MHz	0.07 nJ	[97]
		ME	1910	739 fs	36.8 MHz	0.05 nJ	[98]
		LPE	1898	1580 fs	19.2 MHz	440 pJ	[99]
		LPE	2094	1300 fs	290 MHz	0.39 nJ	[100]
注: LPE, liquid-phase exfoliation; CVD, chemical vapor deposition; ME, mechanical exfoliation; MS, magnetron sputtering; PLD, pulsed laser deposition; HM, hydrothermal method; DFT, direct fusion technique; PM, polyol method; G, graphene; GO, graphene oxide.

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表 2 基于石墨烯、TIs、TMDs、BP的调Q光纤激光器的性能总结

Table 2. Performance summary of Q-switched fiber lasers based on graphene, TIs, TMDs and BP.

Material type		Fabrication methods	λ	Pulse width	Repetation rate	Energy	Ref.
G	G	—	1075 nm	70 ns	257 kHz	46 nJ	[107]
		—	1192.6 nm	800 ps	111 kHz	0.44 μJ	[106]
		CVD	1560 nm	2.06 μs	73.06 kHz	93.7 nJ	[108]
		HM	1561 nm	4.0 μs	27.2 kHz	29 nJ	[109]
		LPE	1555 nm	2 μs	103 kHz	40 nJ	[110]
		—	2.78 μm	2.9 μs	37.2 kHz	1.67 μJ	[111]
	GO	—	1558 nm	2.3 μs	123.5 kHz	1.68 nJ	[112]
		CVD	1044 nm	1.7 μs	215 kHz	8.37 μJ	[113]
		—	2032 nm	3.8 μs	45 kHz	6.71 μJ	[114]
TIs	Bi₂Se₃	LPE	604 nm	494 ns	187.4 kHz	3.1 nJ	[115]
		LPE	635 nm	244 ns	454.5 kHz	22.3 nJ	[116]
		LPE	1.06 μm	1.95 μs	29.1 kHz	17.9 nJ	[117]
		HM	1562.27 nm	1.6 μs	53.7 kHz	0.08 nJ	[118]
		PM	1.5 μm	13.4 μs	12.88 kHz	13.3 nJ	[119]
		LPE	1.55 μm	2.54 μs	212 kHz	—	[120]
		LPE	1530.3 nm	24 μs	40.1 kHz	39.8 nJ	[121]
		LPE	1.98 μm	4.18 μs	26.8 kHz	313 nJ	[122]
	Bi₂Te₃	ME	1559 nm	4.88 μs	21.24 kHz	89.9 nJ	[123]
		SM	1557.5 nm	3.71 μs	49.40 kHz	2.8 μJ	[124]
		LPE	1.5 μm	13 μs	12.82 kHz	1.5 μJ	[125]
		ME	1.56 μm	2.81 μs	42.8 kHz	12.7 nJ	[126]
	Sb₂Te₃	MS	1530—1570 nm	400 ns	338 kHz	18 nJ	[127]
	SnS₂	—	1532.7 nm	510 ns	233 kHz	40 nJ	[128]
TMDs	MoS₂	LPE	604 nm	602 ns	118.4 kHz	5.5 nJ	[129]
		LPE	635 nm	200 ns	512 kHz	28.7 nJ	[130]
		LPE	1030—1070 nm	2.88 μs	89 kHz	126 nJ	[131]
		HM	1.56 μm	3.2 μs	91.7 kHz	17 nJ	[132]
		TEM	1550—1575 nm	6 μs	22 kHz	150 nJ	[133]
		CVD	1529—1570 nm	1.92 μs	114.8 kHz	8.2 nJ	[134]
		LPE	1519—1567 nm	3.3 μs	43.47 kHz	160 nJ	[135]
		PLD	1549.8 nm	660 ns	131 kHz	152 nJ	[136]
		CVD	1549.9 nm	1.66 μs	173 kHz	27.2 nJ	[137]
		LPE	1550 nm	9.92 μs	41.45 kHz	184 nJ	[138]
		LPE	1.06 μm	5.8 μs	28.9 kHz	32.6 nJ	[139]
			1.56 μm	5.4 μs	27 kHz	63.2 nJ
			2.03 μm	1.76 μs	48.1 kHz	1 μJ
TMDs	WS₂	LPE	604 nm	435 ns	132.2 kHz	6.4 nJ	[129]
		CVD	1027—1065 nm	1.65 μs	97 kHz	—	[140]
		LPE	1030 nm	3.2 μs	36.7 kHz	13.6 nJ	[141]
		LPE	1.5 μm	0.71 μs	134 kHz	19 nJ	[142]
		LPE	1558 nm	1.1 μs	97 kHz	179 nJ	[141]
		LPE	1547.5 nm	958 ns	120 kHz	44 nJ	[143]
		LPE	1550 nm	3.966 μs	77.92 kHz	1.2 μJ	[138]
TDMs	MoSe₂	LPE	635.4 nm	240 ns	555 kHz	11.1 nJ	[130]
		LPE	1060 nm	2.8 μs	60 kHz	116 nJ
		LPE	1566 nm	4.8 μs	35.4 kHz	825 nJ	[144]
		LPE	1924 nm	5.5 μs	21.8 kHz	42 nJ
		LPE	1550 nm	4.04 μs	66.8 kHz	369 nJ	[138]
	WSe₂	LPE	1550 nm	4.06 μs	85.36 kHz	485 nJ	[138]
	WSe₂	LPE	1560 nm	3.1 μs	49.6 kHz	33.2 nJ	[145]
	TiSe₂	CVD	1530 nm	1.12 μs	154 kHz	75 nJ	[146]
BP		LPE	635 nm	383 ns	409.8 kHz	27.6 nJ	[147]
		ME	1064.7 nm	2.0 μs	76 kHz	17.8 nJ	[148]
		ME	1.0 μm	1.16 μs	58.73 kHz	2.09 nJ	[149]
		LPE	1.5 μm	1.36 μs	82.64 kHz	148 nJ	[150]
		ME	1561 nm	2.96 μs	34.32 kHz	194 nJ	[151]
		ME	1562.8 nm	10.32 μs	15.78 kHz	94.3 nJ	[14]
		LPE	1912 nm	731 μs	113.3 kHz	632 nJ	[152]
注: SM, solvothermal method; TEM, thermal evaporation method.

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表 3 基于石墨烯、TIs、TMDs、BP的锁模固体激光器的性能总结

Table 3. Performance summary of mode-locked solid-state lasers based on graphene, TIs, TMDs and BP.

Material	Fabrication method	Integration substrate	Bulk laser crystal	Center wavelength	Pulse width	Repetition rate	Output power	Ref.
G	CVD	Quartz	Ti:Sapphire	800 nm	63 fs	99.4 MHz	480 mW	[154]
	LPE	Quartz	Yb:YAG	1064 nm	4 ps	88 MHz	100 mW	[155]
	CVD	GM	Yb:YCOB	1.0 μm	152 fs	—	—	[156]
	CVD	Quartz	Yb:SC₂SiO₅	1062.8 nm	14 ps	90.7 MHz	480 mW	[157]
	VEM	Quartz	Nd:YVO4	1064 nm	8.8 ps	84 MHz	3.06 W	[158]
	CVD	Sapphire	Yb:KGW	1032 nm	325 fs	66.3 MHz	1.78 W	[159]
	LPE	DM	Nd:GdVO₄	1064 nm	16 ps	43 MHz	360 mW	[160]
	CVD	Glass	Yb:Y:CaF₂	1051 nm	4.8 ps	60 MHz	370 mW	[161]
	CVD	Glass	Yb:Y₂SiO₅	1042.6 nm	883 fs	87 MHz	1 W	[162]
	LPE	DM	Yb:KGW	1031.1 nm	428 fs	86 MHz	504 mW	[163]
	LPE	DM	Nd;GdVO₄	1.34 μm	11 ps	100 MHz	1.29 W	[164]
	CVD	Quartz	Cr:YAG	1516 nm	91 fs	—	100 mW	[165]
	CVD	GM	Tm:CLNGG	2.0 μm	354 fs	—	NA	[156]
	CVD	DM	Tm:CLNGG	2014.4 nm	882 fs	95 MHz	60 mW	[166]
	LPE	Quartz	Tm:YAP	2023 nm	< 10 ps	71.8 MHz	268 mW	[167]
	CVD	HRM	Cr:ZnS	2400 nm	41 fs	108 MHz	250 mW	[168]
	CVD	HRM	Tm:CLNGG	2018 nm	729 fs	98.7 MHz	178 mW	[169]
	CVD	Quartz	Tm:YAP	1988 nm	—	62.38 MHz	256 mW	[170]
GO	VEM	Quartz	Nd:GdVO₄	1064 nm	4.5 ps	70 MHz	1.1 W	[171]
GO	VEM	Quartz	Yb:Y₂SiO₅	1059 nm	763 fs	94 MHz	700 mW	[172]
Bi₂Te₃	SCCA	Sapphire	Nd:YVO₄	1064 nm	8 ps	0.98 GHz	180 mW	[173]
MoS₂	PLD	Quartz	Pr:GdLiF₄	522 nm	46 ps	101.4 MHz	10 mW	[153]
MoS₂/G	PLD	HRM	Yb:KYW	1037.2 nm	236 fs	41.84 MHz	550 mW	[174]
MoS₂/GO	LPE	DM	Nd:GdVO₄	1064 nm	17 ps	1.02 GHz	508 mW	[175]
BP	LPE	DM	Nd:GdVO₄	1064 nm	6.1 ps	140 MHz	460 mW	[176]
	LPE	HRM	Yb,Lu:CALGO	1053.4 nm	272 fs	63.3 MHz	820 mW	[177]
	LPE	Quartz	Nd;GdVO₄	1.34 μm	9.24 ps	58.14 MHz	350 mW	[178]
	LPE	—	Ho,Pr:ZBLAN	2.8 μm	8.6 ps	13.98 MHz	87.8 mW	[179]
注: VEM, vertical evaporation method; SCCA, spin coating–coreduction approach; DM, dielectric mirror; HRM, high reflective mirror.

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表 4 在2—3 μm波段下, 基于石墨烯、TIs、TMDs、BP的调Q固体激光器的性能总结

Table 4. Performance summary of Q-switched solid-state lasers based on graphene, TIs, TMDs and BP at the wavelength of 2－3 μm.

Material		Fabrication method	Integration substrate	Bulk laser crystal	Center wavelength	Pulse width	Repitition rate	Output power	Ref.
G		—	Quartz	Ho:YAG	2097 nm	2.6 μs	64 kHz	264 mW	[180]
		—	Quartz	Tm:LGGG	2003 nm	1.29μs	43.9 kHz	140 mW	[181]
		EG	SiC	Cr:ZnSe	2.4 μm	157 ns	169 kHz	256 mW	[182]
		CVD	CaF₂	Er:Y₂O₃	2.7 μm	296 ns	44.2 kHz	114 mW	[183]
		—	HRM	Er:ZBLAN	2.78 μm	2.9 μs	37 kHz	62 mW	[111]
		CVD	Quartz	Er:CaF₂	2.8 μm	1.3 μs	62.7 kHz	172 mW	[184]
		CVD	Sapphire	Ho,Pr:LLF	2.95 μm	937 ns	55.7 kHz	172 mW	[185]
		LPE	HRM	Ho:ZBLAN	3.0 μm	1.2 μs	92 kHz	102 mW	[186]
GO		LPE	—	Tm:Y:CaF₂	1969 nm	1.32μs	20.2 kHz	400 mW	[187]
GO		LPE	Quartz	Tm:YLF	1928 nm	1.0 μs	38 kHz	379 mW	[188]
TIs	Bi₂Te₃	LPE	Quartz	Tm:LuAG	2023.6 nm	620 ns	118 kHz	2.03 W	[189]
	Bi₂Te₃	HEM	CaF₂	Ho:ZBLAN	2.979 μm	1.4 μs	81.96 kHz	327 mW	[190]
	Bi₂Te₃/G	SM	SiO₂	Tm:YAP	1980 nm	238 ns	108 kHz	2.34 W	[191]
	Bi₂Te₃/G	SM	SiO₂	Er:YSGG	2796 nm	243 ns	88 kHz	110 mW	[191]
TMDs	MoS₂	PLD	Quartz	Tm:Ho:YGG	2.1 μm	410 ns	149 kHz	206 mW	[192]
		PLD	GM	Tm:CLNGG	1979 nm	4.8 μs	110 kHz	62 mW	[193]
		LPE	DM	Tm:CYAO	1850 nm	0.5 μs	84.9 kHz	490 mW	[194]
		LPE	Glass	Tm,Ho:YAP	2129 nm	435 ns	55 kHz	275 mW	[195]
		LPE	YAG	Er:Lu₂O₃	2.84 μm	335 ns	121 kHz	1.03 W	[196]
		CVD	YAG	Ho,Pr:LLF	2.95 μm	621 ns	85.8 kHz	70 mW	[197]
		—	—	Tm:GdVO₄	1902 nm	0.8 μs	49.1 kHz	100 mW	[198]
	MoS₂/BP	LPE	SAMs	Tm:YAP	1993 nm	488 ns	86 kHz	3.6 W	[199]
	ReS₂	LPE	Sapphire	Er:YSGG	2.8 μm	324 ns	126 kHz	104 mW	[200]
	ReS₂	LPE	YAG	Er:SrF₂	2.79 μm	508 ns	49 kHz	580 mW	[201]
	WS₂	TD	SiO₂	Tm:LuAG	2.0 μm	660 ns	62 kHz	1.08 W	[202]
		SGM	HRM	Ho³⁺/Pr³⁺:ZBLAN	2.86 μm	1.73 us	131 kHz	48 mW	[203]
		LPE	YAG	Ho,Pr,LLF	2.95 μm	654 ns	90.4 kHz	82 mW	[204]
BP		ME	Quartz	Tm:Ho:YAG	2.1 μm	636 ns	122 kHz	27 mW	[205]
		LPE	Quartz	Tm:YAP	1988 nm	1.8 us	19.3 kHz	151 mW	[206]
		LPE	DM	Tm:YAP	1969 nm	181 ns	81 kHz	3.1 W	[207]
		ME	HRM	Tm:YAG	2 μm	3.12 us	11.6 kHz	38 mW	[208]
		LPE	—	Ho:ZBLAN	2.9 μm	2.4 μs	62.5 kHz	309 mW	[179]
		LPE	DM	Cr:ZnSe	2.4 μm	189 ns	176 kHz	36 mW	[209]
		LPE	—	Er:CaF₂	2.8 μm	955 ns	41.9 kHz	178 mW	[210]
		LPE	GM	Tm:CaYAlO₄	1.93 μm	3.1 μs	17.7 kHz	12 mW	[211]
		LPE	GM	Er:Y₂O₃	2.72 μm	4.5 μs	12.6 kHz	6 mW	[211]
		LPE	Silicon	Er:SrF₂	2.79 μm	702 ns	77 kHz	180 mW	[212]
		LPE	—	Er:ZBLAN	2.8 μm	1.2 μs	63 kHz	485 mW	[213]
		LPE	Silicon	Er:CaF₂	2.8 μm	955 ns	41.9 kHz	178 mW	[210]
		LPE	CaF₂	Ho,Pr:LLF	2.95 μm	194 ns	159 kHz	385 mW	[214]
注: SGM, sulfidation grown method; GM, gold mirror.

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Vol. 68, Issue 18 - 2019-09-20

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