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Electret attracts increasing attention nowadays because of its lasting and stable electrostatic field. To achieve the widespread use of electret material, higher density and better stability of the electret charge storage as well as well-distributed electrostatic field must be ensured at the same time. Based on the mechanism of interface polarization on double-layer media, a novel charging technology for electret is reported in this paper; and PP film is successfully charged through an auxiliary layer to form electret by this proposed method. Effect of charging temperature and charging voltage on the charge storage performance of the as-prepared PP film electret is investigated by means of surface potential measurement. Also its charge storage performance at high temperatures is explored by thermally stimulated discharge technique. Furthermore, its electrostatic field distribution in the directions of X and Y is measured. Results show that the interface polarization charging is more excellent than the corona charging. At a certain temperature, the surface potential of PP film electret increases with increasing charging voltage and both are in a good linear relationship. This is in good agreement with the theoretical analysis in terms of the equation of electret charge accumulation during the charging process. It is shown that in the case of constant charging voltage within the range of 0.53.0 kV, the effect of charging temperature is not obvious when the temperature is below 75 ℃; however, when the temperature is higher than 75 ℃, the surface potential of PP film electret increases with increasing temperature. In addition, its surface potential may change a little with time so it has an excellent charge storage stability. The distribution of its surface potential shows that it exhibits an homogeneous electrostatic field due to interface polarization charging.
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Keywords:
- electret /
- interface polarization charging /
- charge storage stability /
- electrostatic field distribution
[1] Ko W C, Chen K W, Liou C H, Chen Y C, Wu W J, Lee C K 2012 IEEE Trans. Dielectr. Electrl. Insul. 19 1226
[2] Suzuki Y 2011 IEEJ Trans. Electr. Electr. 6 101
[3] Altena G, Renaud M, Elfrink R, Goedbloed M H, Nooijer C D, Van S R 2013 J. Phys. Conf. Ser. 476 012078
[4] Hoffmann D, Folkmer B, Manoli Y 2009 J. Micromech. Microeng. 19 094001
[5] Sakane Y, Suzuki Y, Kasagi N 2008 J. Micromech. Microeng. 18 104011
[6] Stark W, Harnisch F, Manthey W S 1990 J. Electrostat. 25 277
[7] Chen G J, Lei M F Xiao H M, Wu L 2014 Chin. Phys. Lett. 31 127702
[8] Sessler G M 1987 Electrets 2 nd Ed (New York: Springer-Verlag) p42
[9] Chen G J China Patent ZL201210145834.2 [陈钢进 2014 ZL201210145834.2] [2014-09-17]
[10] Jin W F 1995 Dielectric physics (China Machine Press) p82-83 [金维芳 1995 电介质物理学 机械工业出版社 第 82–83 页]
[11] Sessler G M, Alquie C, Lewiner J 1992 J. Appl. Phys. 71 2280
[12] Gross B, Sessler G M, West J E 1974 Appl. Phys. Lett. 24 351
[13] Jiang J, Xia Z F 1992 J. Funct. Mater.23 206 [江键, 夏钟福 1992 功能材料 23 206]
[14] Yovcheva T A, Mekishev G A, Marinov A T 2004 J. Phys. Condensed. Matter 16 455
[15] Viraneva A P, Yovcheva T A, Gencheva E A, Mekishev G A 2010 J. Non-Cryst. Solids 356 560
[16] Ono R, Nakazawa M, Oda T 2004 IEEE Trans. Ind. Appl. 40 1482
[17] Zhao Y H, Chen G J, Zhang D L, Zhou X 2009 J. Hangzhou Dianzi University 33 73 (in Chinese) [赵延海, 陈钢进, 张东林, 周霞 2009 杭州电子科技大学学报 33 73]
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[1] Ko W C, Chen K W, Liou C H, Chen Y C, Wu W J, Lee C K 2012 IEEE Trans. Dielectr. Electrl. Insul. 19 1226
[2] Suzuki Y 2011 IEEJ Trans. Electr. Electr. 6 101
[3] Altena G, Renaud M, Elfrink R, Goedbloed M H, Nooijer C D, Van S R 2013 J. Phys. Conf. Ser. 476 012078
[4] Hoffmann D, Folkmer B, Manoli Y 2009 J. Micromech. Microeng. 19 094001
[5] Sakane Y, Suzuki Y, Kasagi N 2008 J. Micromech. Microeng. 18 104011
[6] Stark W, Harnisch F, Manthey W S 1990 J. Electrostat. 25 277
[7] Chen G J, Lei M F Xiao H M, Wu L 2014 Chin. Phys. Lett. 31 127702
[8] Sessler G M 1987 Electrets 2 nd Ed (New York: Springer-Verlag) p42
[9] Chen G J China Patent ZL201210145834.2 [陈钢进 2014 ZL201210145834.2] [2014-09-17]
[10] Jin W F 1995 Dielectric physics (China Machine Press) p82-83 [金维芳 1995 电介质物理学 机械工业出版社 第 82–83 页]
[11] Sessler G M, Alquie C, Lewiner J 1992 J. Appl. Phys. 71 2280
[12] Gross B, Sessler G M, West J E 1974 Appl. Phys. Lett. 24 351
[13] Jiang J, Xia Z F 1992 J. Funct. Mater.23 206 [江键, 夏钟福 1992 功能材料 23 206]
[14] Yovcheva T A, Mekishev G A, Marinov A T 2004 J. Phys. Condensed. Matter 16 455
[15] Viraneva A P, Yovcheva T A, Gencheva E A, Mekishev G A 2010 J. Non-Cryst. Solids 356 560
[16] Ono R, Nakazawa M, Oda T 2004 IEEE Trans. Ind. Appl. 40 1482
[17] Zhao Y H, Chen G J, Zhang D L, Zhou X 2009 J. Hangzhou Dianzi University 33 73 (in Chinese) [赵延海, 陈钢进, 张东林, 周霞 2009 杭州电子科技大学学报 33 73]
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