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The laminated fluoroethylenepropylene (FEP) and porous polytetrafluoroethylene (PTFE) films with regular void structure are prepared by using a rigid template with a periodic-structured surface. The porous PTFE film is firstly patterned with the rigid template surface by applying force on the stack of porous PTFE film and the template, then followed by the fusion bonding process to bond the FEP and patterned porous PTFE together. The corona charging technique is used to make the laminated film piezoelectric, i.e., to become piezoelectrets. The Young’s modulus of the laminated FEP/PTFE films is determined by dielectric resonance spectra. The thermal stability of the piezoelectric d33 coefficients are characterized by measuring the decay of d33 at elevated temperatures. The charge dynamics in such FEP/PTFE piezoelectrets is investigated by analying the thermally stimulated discharge current spectra in short circuit. The results show that laminated FEP/PTFE films with very regular void structure can be made by using rigid template and fusion bonding process. The Young's modulus of such films is about 0.53 MPa. The maximum quasi-static piezoelectric d33 coefficient up to 500 pC/N is achieved. The laminated FEP/PTFE films show improved thermal stability. For example, the remnant d33value is around 22% of the initial value for the sample annealed at 150 ℃ for 5000 min. For the samples after annealing treatment, the main drift path of the detrapped charges is through the solid dielectric layer.
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Keywords:
- regular structure /
- piezoelectret /
- piezoelectricity /
- charge dynamics
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[2] Gerhard-Multhaupt R 2002 IEEE Trans. Dielectr. Insul. 9 850
[3] Bauer S 2006 IEEE Trans. Dielectr. Insul. 13 953
[4] Paajanen M, Lekkala J, Kirjavainen K 2000 Sen. Act. 84 95
[5] Neugschwandtner G S, Schwdiauer R, Bauer-Gogonea S, Bauer S 2000 Appl. Phys. A: Mater. Sci. Process. 70 1
[6] Zhang X, Hillenbrand J, Sessler G M 2006 Appl. Phys. A: Mater. Sci. Process. 84 139
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[8] Hu Z, Seggern H V 2006 J. Appl. Phys. 99 024102
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[12] Zhang X Q, Huang J F, Chen J B, Wan Z M, Wang S, Xia Z F 2007 Appl. Phys. Lett. 91 182901
[13] Zhang X Q, Hillenbrand J, Sessler G M 2007 J. Appl. Phys. 101 054114
[14] Qiu X L, Xia Z F, An Z L, Wu X Y 2005 Acta Phys. Sin. 54 402 (in Chinese) [邱勋林、夏钟福、安振连、吴贤勇 2005 54 402]
[15] Zhang P F, Xia Z F, Qiu X L, Wu X Y 2005 Acta Phys. Sin. 54 397 (in Chinese) [张鹏锋、夏钟福、邱勋林、吴贤勇 2005 54 397]
[16] Wang F P, Xia Z F, Qiu X M, Lü H, Qiu X L, Shen J 2005 Acta Phys. Sin. 54 4400 (in Chinese) [王飞鹏、夏钟福、裘晓敏、吕 航、邱勋林、沈 军 2005 54 4400]
[17] Bovtun V, Dring J, Wegener M, Bartusch J, Beck U, Erhard A, Borisov V 2008 Ferroelectrics 370 11
[18] Sun Z L, Zhang X Q, Cao G X, Wang X W, Xia Z F Acta Phys. Sin. (in Chinese) [孙转兰、张晓青、曹功勋、王学文、夏钟福 ](已接受)
[19] Wang F P, Xia Z F, Qiu X L, Shen J 2006 Acta Phys. Sin. 55 3705 (in Chinese)[王飞鹏、夏钟福、邱勋林、沈 军 2006 55 3705]
[20] Qiu X L, Xia Z F, Wang F P 2006 Acta Phys. Sin. 55 2578 (in Chinese) [邱勋林、夏钟福、王飞鹏 2006 55 2578]
[21] Sessler G M, Hillenbrand J 1999 Appl. Phys. Lett. 75 3405
[22] Nicolson A M 1919 AIEE Transactions 38 1467
[23] Cady W G 1922 Phys. Rev. Lett. 19 1
[24] Ohigashi H 1976 J. Appl. Phys. 47 949
[25] Mellinger A 2003 IEEE Trans. Dielectr. Insul. 10 842
[26] Zhang X, Wang X, Huang J, Xia Z 2009 J. Materials Sci. 44 2459
[27] Altafim R A P, Qiu X, Wirges W, Gerhard R, Altafim R A C, Basso H C, Jenninger W, Wagner J 2009 J. Appl. Phys. 106 014106
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[1] Bauer S, Gerhard-Multhaupt R, Sessler G M 2004 Phys. Today 57 37
[2] Gerhard-Multhaupt R 2002 IEEE Trans. Dielectr. Insul. 9 850
[3] Bauer S 2006 IEEE Trans. Dielectr. Insul. 13 953
[4] Paajanen M, Lekkala J, Kirjavainen K 2000 Sen. Act. 84 95
[5] Neugschwandtner G S, Schwdiauer R, Bauer-Gogonea S, Bauer S 2000 Appl. Phys. A: Mater. Sci. Process. 70 1
[6] Zhang X, Hillenbrand J, Sessler G M 2006 Appl. Phys. A: Mater. Sci. Process. 84 139
[7] Zhang X, Hillenbrand J, Sessler G M 2004 J. Phys. D: Appl. Phys. 37 2146
[8] Hu Z, Seggern H V 2006 J. Appl. Phys. 99 024102
[9] Zhang X Q, Huang J F, Wang F P ,Xia Z F 2008 Acta Phys. Sin. 57 1902 (in Chinese) [张晓青、黄金峰、王飞鹏、夏钟福 2008 57 1902]
[10] Zhang X Q, Huang J F, Wang X W, Xia Z F 2009 Acta Phys. Sin. 58 3525 (in Chinese) [张晓青、黄金峰、王学文、夏钟福 2009 58 3525]
[11] Zhang X Q, Wang X W, Cao G X, Pan D S, Xia Z F 2009 Appl. Phys. A: Mater. Sci. Process. 97 859
[12] Zhang X Q, Huang J F, Chen J B, Wan Z M, Wang S, Xia Z F 2007 Appl. Phys. Lett. 91 182901
[13] Zhang X Q, Hillenbrand J, Sessler G M 2007 J. Appl. Phys. 101 054114
[14] Qiu X L, Xia Z F, An Z L, Wu X Y 2005 Acta Phys. Sin. 54 402 (in Chinese) [邱勋林、夏钟福、安振连、吴贤勇 2005 54 402]
[15] Zhang P F, Xia Z F, Qiu X L, Wu X Y 2005 Acta Phys. Sin. 54 397 (in Chinese) [张鹏锋、夏钟福、邱勋林、吴贤勇 2005 54 397]
[16] Wang F P, Xia Z F, Qiu X M, Lü H, Qiu X L, Shen J 2005 Acta Phys. Sin. 54 4400 (in Chinese) [王飞鹏、夏钟福、裘晓敏、吕 航、邱勋林、沈 军 2005 54 4400]
[17] Bovtun V, Dring J, Wegener M, Bartusch J, Beck U, Erhard A, Borisov V 2008 Ferroelectrics 370 11
[18] Sun Z L, Zhang X Q, Cao G X, Wang X W, Xia Z F Acta Phys. Sin. (in Chinese) [孙转兰、张晓青、曹功勋、王学文、夏钟福 ](已接受)
[19] Wang F P, Xia Z F, Qiu X L, Shen J 2006 Acta Phys. Sin. 55 3705 (in Chinese)[王飞鹏、夏钟福、邱勋林、沈 军 2006 55 3705]
[20] Qiu X L, Xia Z F, Wang F P 2006 Acta Phys. Sin. 55 2578 (in Chinese) [邱勋林、夏钟福、王飞鹏 2006 55 2578]
[21] Sessler G M, Hillenbrand J 1999 Appl. Phys. Lett. 75 3405
[22] Nicolson A M 1919 AIEE Transactions 38 1467
[23] Cady W G 1922 Phys. Rev. Lett. 19 1
[24] Ohigashi H 1976 J. Appl. Phys. 47 949
[25] Mellinger A 2003 IEEE Trans. Dielectr. Insul. 10 842
[26] Zhang X, Wang X, Huang J, Xia Z 2009 J. Materials Sci. 44 2459
[27] Altafim R A P, Qiu X, Wirges W, Gerhard R, Altafim R A C, Basso H C, Jenninger W, Wagner J 2009 J. Appl. Phys. 106 014106
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