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Three kinds of bilayer films, i.e. aluminum (Al)/fluorine-doped tin oxide (FTO), copper (Cu)/FTO and silver (Ag)/FTO, are prepared by coating a commercial FTO glass with sputtered metal layers, and subsequently thermally annealed. Then all the as-annealed bilayer films are irradiated using a 532 nm nanosecond pulsed laser. X-ray diffraction (XRD) analysis confirms that all the laser-irradiated films have underwent laser annealing, resulting in an improvement in their photoelectric properties. More significantly, after laser irradiation, the as-annealed Ag/FTO film exhibits the highest increment in average transmittance (400–800 nm) that is increased from 72.6% to 80.5%. This should be attributed mainly to the formation of laser-induced grating structures that have anti-reflection effect on their surfaces. It is also found that the laser irradiation decreases the sheet resistance of the as-annealed Ag/FTO film from 5.6 to 5.3 Ω/sq. The annealing caused by thermal effect of laser irradiation gives rise to an increase in grain size, thereafter reduces carrier scattering at grain boundaries and enhances carrier mobility, which should be responsible for the improvement in conductivity. The calculated results show that after laser irradiation the figure of merit of the as-annealed Ag/FTO film is greatly increased from 0.73×10-2 to 2.16×10-2Ω-1, indicating a significant enhancement in the overall photoelectric property of the film. Laser irradiation can simultaneously achieve fabrication of grating structures and laser annealing, providing a new idea for performance optimization of metal-layer-composited transparent conductive films.
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Keywords:
- transparent conductive film /
- laser irradiation /
- grating structure /
- photoelectric property
[1] Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2014 Acta Phys. Sin. 63 028801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2014 63 028801]
[2] L M S, Pang Z Y, Xiu X W, Dai Y, Han S H 2007 Chin. Phys. 16 0548
[3] Daniel P P, Michael G H, Paul G O, Wang Z B, Navid S, Nazir K, Lu Z H 2011 Nano Lett. 11 1457
[4] Xie J S, Chen Q 2014 Chin. Phys. B 23 097703
[5] Miyata T, Hikosaka T, Minami T 2000 Sens. Actuators B 69 16
[6] Berne‘de J C, Cattin L, Morsli M, Berredjem Y 2008 Sol. Energy Mater. Sol. Cells 92 1508
[7] Sutthana S, Hongsith N, Choopun S 2010 Curr. Appl. Phys. 10 813
[8] Li Z P, Men C L, Wang W, Cao J 2014 Chin. Phys. B 23 057205
[9] Park H K, Kang J W, Na S I, Kim D Y, Kim H K 2009 Sol. Energy Mater. Sol. Cells. 93 1994
[10] Wu C T, Ko F H, Lin C H 2007 Appl. Phys. Lett. 90 171911
[11] Chen H L, Chuang S Y, Lin C H, Lin Y H 2007 Opt. Express 15 14793
[12] Grann E B, Moharam M G, Varga M, Pommet D A 1995 J. Opt. Soc. Am. A 12 333
[13] Li Y P, Li J X, Hao Y Z, Chen T H 2011 J. Funct. Mater. 10 1378 (in Chinese) [李英品, 李俊新, 郝彦忠, 陈铁红 2011 功能材料 10 1378]
[14] Li X, Guo W H, L Z J, Xing J H, Wang M 2014 Acta Phys. Sin. 63 024205 (in Chinese) [李侠, 郭文华, 吕志娟, 邢进华, 王鸣 2014 63 024205]
[15] Mendes P M, Jacke S, Critchley K, Plaza J, Chen Y, Nikitin K, Palmer R E, Preece J A, Evans S D, Fitzmaurice D 2004 Langmuir 20 3766
[16] D'Agostino R, Flamm D L 1981 J. Appl. Phys. 52 162
[17] Lee H, Hong S, Yang K, Choi K 2006 Microelectron. Eng. 83 323
[18] Li B J, Huang L J, Zhou M, Ren N F, Wu B 2014 Cream. Int. 40 1627
[19] Sakabe S, Hashida M, Tokita S, Namba S, Okamuro K 2009 Phys. Rev. B 79 033409
[20] Chan G H, Zhao J, Schatz G C, Van Duyne R P 2008 J. Phys. Chem. C 112 13958
[21] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[22] Dimopoulos T, Radnoczi G Z, Horváth Z E, Brckl H 2012 Thin Solid Films 520 5222
[23] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[24] Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhao Y 2013 Acta Phys. Sin. 62 247802 (in Chinese) [王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 62 247802]
[25] Tseng M F, Hsiao W T, Chiang D, Huang K C, Chou C P 2011 Appl. Surf. Sci. 257 7204
[26] Liu C M, Fang L M, Zu X T, Zhou W L 2007 Chin. Phys. 16 0095
[27] Wang L W, Meng L J, Teixeira V, Song S G, Xu Z, Xu X R 2009 Thin Solid Films 517 3721
[28] Vaissié L, Smolski O V, Mehta A, Johnson E G 2005 IEEE Photonic. Technol. Lett. 17 732
[29] Lu H, Tu Y, Lin X, Fang B, Luo D, Laaksonen A 2010 Mater. Lett. 64 2072
[30] Pankove J I 1971 Optical Processes in Semiconductors (New Jersey: Prentice Hall Inc.) p34
[31] Zhang G H, Deng X Y, Xue H, Xiang G 2013 Chin. Phys. B 22 047803
[32] Kim H, Horwitz J S, Qadri S B, Chrisey D B 2002 Thin Solid Films 420-421 107
[33] Lee S, Seong J, Kim D Y 2010 J. Korean Phys. Soc. 56 782
[34] Shanthi E, Dutta V, Banerjee A, Chopra K L 1980 J. Appl. Phys. 51 6243
[35] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[36] Jiang X, Sun C, Hong R J, Dai D H 2008 Transparent Conductive Oxide Films (Beijing: Higher Education Press) p291 (in Chinese) [姜辛, 孙超, 洪瑞江, 戴达煌 2008 透明导电氧化物薄膜(北京: 高等教育出版社) 第291页]
[37] Haacke G 1976 J. Appl.Phys. 47 4086
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[1] Wang L, Zhang X D, Yang X, Wei C C, Zhang D K, Wang G C, Sun J, Zhao Y 2014 Acta Phys. Sin. 63 028801 (in Chinese) [王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖 2014 63 028801]
[2] L M S, Pang Z Y, Xiu X W, Dai Y, Han S H 2007 Chin. Phys. 16 0548
[3] Daniel P P, Michael G H, Paul G O, Wang Z B, Navid S, Nazir K, Lu Z H 2011 Nano Lett. 11 1457
[4] Xie J S, Chen Q 2014 Chin. Phys. B 23 097703
[5] Miyata T, Hikosaka T, Minami T 2000 Sens. Actuators B 69 16
[6] Berne‘de J C, Cattin L, Morsli M, Berredjem Y 2008 Sol. Energy Mater. Sol. Cells 92 1508
[7] Sutthana S, Hongsith N, Choopun S 2010 Curr. Appl. Phys. 10 813
[8] Li Z P, Men C L, Wang W, Cao J 2014 Chin. Phys. B 23 057205
[9] Park H K, Kang J W, Na S I, Kim D Y, Kim H K 2009 Sol. Energy Mater. Sol. Cells. 93 1994
[10] Wu C T, Ko F H, Lin C H 2007 Appl. Phys. Lett. 90 171911
[11] Chen H L, Chuang S Y, Lin C H, Lin Y H 2007 Opt. Express 15 14793
[12] Grann E B, Moharam M G, Varga M, Pommet D A 1995 J. Opt. Soc. Am. A 12 333
[13] Li Y P, Li J X, Hao Y Z, Chen T H 2011 J. Funct. Mater. 10 1378 (in Chinese) [李英品, 李俊新, 郝彦忠, 陈铁红 2011 功能材料 10 1378]
[14] Li X, Guo W H, L Z J, Xing J H, Wang M 2014 Acta Phys. Sin. 63 024205 (in Chinese) [李侠, 郭文华, 吕志娟, 邢进华, 王鸣 2014 63 024205]
[15] Mendes P M, Jacke S, Critchley K, Plaza J, Chen Y, Nikitin K, Palmer R E, Preece J A, Evans S D, Fitzmaurice D 2004 Langmuir 20 3766
[16] D'Agostino R, Flamm D L 1981 J. Appl. Phys. 52 162
[17] Lee H, Hong S, Yang K, Choi K 2006 Microelectron. Eng. 83 323
[18] Li B J, Huang L J, Zhou M, Ren N F, Wu B 2014 Cream. Int. 40 1627
[19] Sakabe S, Hashida M, Tokita S, Namba S, Okamuro K 2009 Phys. Rev. B 79 033409
[20] Chan G H, Zhao J, Schatz G C, Van Duyne R P 2008 J. Phys. Chem. C 112 13958
[21] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[22] Dimopoulos T, Radnoczi G Z, Horváth Z E, Brckl H 2012 Thin Solid Films 520 5222
[23] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[24] Wang Y F, Zhang X D, Huang Q, Yang F, Meng X D, Song Q G, Zhao Y 2013 Acta Phys. Sin. 62 247802 (in Chinese) [王延峰, 张晓丹, 黄茜, 杨富, 孟旭东, 宋庆功, 赵颖 2013 62 247802]
[25] Tseng M F, Hsiao W T, Chiang D, Huang K C, Chou C P 2011 Appl. Surf. Sci. 257 7204
[26] Liu C M, Fang L M, Zu X T, Zhou W L 2007 Chin. Phys. 16 0095
[27] Wang L W, Meng L J, Teixeira V, Song S G, Xu Z, Xu X R 2009 Thin Solid Films 517 3721
[28] Vaissié L, Smolski O V, Mehta A, Johnson E G 2005 IEEE Photonic. Technol. Lett. 17 732
[29] Lu H, Tu Y, Lin X, Fang B, Luo D, Laaksonen A 2010 Mater. Lett. 64 2072
[30] Pankove J I 1971 Optical Processes in Semiconductors (New Jersey: Prentice Hall Inc.) p34
[31] Zhang G H, Deng X Y, Xue H, Xiang G 2013 Chin. Phys. B 22 047803
[32] Kim H, Horwitz J S, Qadri S B, Chrisey D B 2002 Thin Solid Films 420-421 107
[33] Lee S, Seong J, Kim D Y 2010 J. Korean Phys. Soc. 56 782
[34] Shanthi E, Dutta V, Banerjee A, Chopra K L 1980 J. Appl. Phys. 51 6243
[35] Chen M F, Lin K, Ho Y S 2011 Mater. Sci. Eng. B 176 127
[36] Jiang X, Sun C, Hong R J, Dai D H 2008 Transparent Conductive Oxide Films (Beijing: Higher Education Press) p291 (in Chinese) [姜辛, 孙超, 洪瑞江, 戴达煌 2008 透明导电氧化物薄膜(北京: 高等教育出版社) 第291页]
[37] Haacke G 1976 J. Appl.Phys. 47 4086
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