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Using the linear response method based on the density functional perturbation theory, we simulate the effect of intense laser irradiation on the zinc-blende structural stability of silicon carbide crystal. By calculating the phonon dispersion curves for the 3C-SiC crystal of the zinc-blende structure at different electronic temperatures, we find that the transverse acoustic phonon frequencies of 3C-SiC become imaginary as the electron temperature increases. The critical electronic temperature is 3.395 eV. This means that the lattices of 3C-SiC become unstable under the intense laser irradiation. These results are very similar to the previous results for the diamond structure(C and Si) and the zinc-blende structure (GaAs and InSb). In an electron temperature range of 0-4.50 eV, the LO-TO splitting at Γ gradually increases with the increase of electronic temperature. When the electron temperature is beyond 4.50 eV, the splitting decreases. The results indicate that only under the intense enough laser irradiation, the ionic strength can be weakened by the electronic excitation.
[1] van Vechten J A, Tsu R, Saris F W 1979 Phys. Lett. A 74 422
[2] Shank C V, Yen R, Hirlimann C 1983 Phys. Rev. Lett. 50 454
[3] Larsson J, Heimann P A, Lindenberg A M, Schuck P J, Bucksbaum P H, Lee R W, Padmore H A, Wark J S, Falcone R W 1998 Appl. Phys. A 66 587
[4] Uteza O P, Gamaly E G, Rode A V, Samoc M, Luther-Davies B 2004 Phys. Rev. B 70 054108
[5] Saeta P, Wang J, Siegal Y, Bloembergen N, Mazur E 1991 Phys. Rev. Lett. 67 1023
[6] Silvestrelli P L, Alavi A, Parrinello M, Frenkel D 1997 Phys. Rev. B 56 3806
[7] Silvestrelli P L, Alavi A, Parrinello M, Frenkel D 1996 Phys. Rev. Lett. 7 3149
[8] Recoules V, Clérouin J, Zérah G, Anglade P M, Mazevet S 2006 Phys. Rev. Lett. 96 055503
[9] Zijlstra E S, Walkenhorst J, Gilfert C, Sippel C, Töws W, Garcia M E 2008 Appl. Phys. B 93 743
[10] Deng X C, Sun H, Rao C Y, Zhang B 2013 Chin. Phys. B 22 017302
[11] Song Q W, Zhang Y M, Han J, Tanner S P, Dimitrijev S, Zhang Y M, Tang X Y, Guo H 2013 Chin. Phys. B 22 027302
[12] Liu L, Yang Y T, Ma X H 2011 Chin. Phys. B 20 127204
[13] Zheng L, Zhang F, Liu S B, Dong L, Liu X F, Fan Z C, Liu B, Yan G G, Wang L, Zhao W S, Sun G S, He Z, Yang F H 2013 Chin. Phys. B 22 097302
[14] Liu Z L 2009 Power Electron. 6 10 (in Chinese) [刘忠立 2009 电力电子 6 10]
[15] Gao S P, Zhu T 2012 Acta Phys. Sin. 61 137103 (in Chinese) [高尚鹏, 祝桐 2012 61 137103]
[16] L M Y, Chen Z W, Li L X, Liu R P, Wang W K 2006 Acta Phys. Sin. 55 3576 (in Chinese) [吕梦雅, 陈洲文, 李立新, 刘日平, 王文魁 2006 55 3576]
[17] Zhou P L, Zheng S K, Tian Y, Zhang S M, Shi R Q, He J F, Yan X B 2014 Acta Phys. Sin. 63 053102 (in Chinese) [周鹏力, 郑树凯, 田言, 张朔铭, 史茹倩, 何静芳, 闫小兵 2014 63 053102]
[18] Gonze X, Beuken J M, Caracas R, Detraux F, Fuchs M, Rignanese G M, Sindic L, Verstraete M, Zerah G, Jollet F, Torrent M, Roy A, Mikami M, Ghosez P, Raty J Y, Allan D C 2002 Comput. Mater. Sci. 25 478
[19] Troullier N, Martins J L 1990 Solid State Commun. 74 613
[20] Ashcroft N W, Mermin N D 1976 Solid State Physic (Independence Ky: Thomson Learning Inc) p81
[21] Käckell P, Wenzien B, Bechstedt F 1994 Phys. Rev. B 50 10761
[22] Choyke W J, Hamilton D R, Patrick L 1964 Phys. Rev. 133 A1163
[23] Feng S Q, Zhao J L, Cheng X L 2013 J. Appl. Phys. 113 023301
[24] Thompson M O, Galvin G J, Mayer J W, Peercy P S, Poate J M, Jacobson D C, Cullis A G, Chew N G 1984 Phys. Rev. Lett. 52 2360
[25] Poate J M, Brown W L 1982 Phys. Today 35 24
[26] Feldman D W, Parker J H, Choyke W J, Patrick L 1968 Phys. Rev. 173 787
[27] Olego D, Cardona M 1982 Phys. Rev. B 25 1151
[28] Olego D, Cardona M, Vogl P 1982 Phys. Rev. B 25 3878
[29] Karch K, Pavone P, Windl W, Schtt O, Strauch D 1994 Phys. Rev. B 50 17054
[30] Serrano J, Strempfer J, Cardona M, Schwoerer-Böhning M, Requardt H, Lorenzen M, Stojetz B, Pavone P, Choyke W J 2002 Appl. Phys. Lett. 80 4360
[31] Huang K, Han R Q 1988 Solid State Physics (1st Ed.) (Beijing: Higher Education Press) pp63-107 (in Chinese) [黄昆, 韩汝琦1988固体物理学 (第一版) (北京:高等教育出版社) 第63–107页]
[32] Wang M M, Gao T, Yu Y, Zeng X W 2012 Eur. Phys. J. Appl. Phys. 57 10104
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[1] van Vechten J A, Tsu R, Saris F W 1979 Phys. Lett. A 74 422
[2] Shank C V, Yen R, Hirlimann C 1983 Phys. Rev. Lett. 50 454
[3] Larsson J, Heimann P A, Lindenberg A M, Schuck P J, Bucksbaum P H, Lee R W, Padmore H A, Wark J S, Falcone R W 1998 Appl. Phys. A 66 587
[4] Uteza O P, Gamaly E G, Rode A V, Samoc M, Luther-Davies B 2004 Phys. Rev. B 70 054108
[5] Saeta P, Wang J, Siegal Y, Bloembergen N, Mazur E 1991 Phys. Rev. Lett. 67 1023
[6] Silvestrelli P L, Alavi A, Parrinello M, Frenkel D 1997 Phys. Rev. B 56 3806
[7] Silvestrelli P L, Alavi A, Parrinello M, Frenkel D 1996 Phys. Rev. Lett. 7 3149
[8] Recoules V, Clérouin J, Zérah G, Anglade P M, Mazevet S 2006 Phys. Rev. Lett. 96 055503
[9] Zijlstra E S, Walkenhorst J, Gilfert C, Sippel C, Töws W, Garcia M E 2008 Appl. Phys. B 93 743
[10] Deng X C, Sun H, Rao C Y, Zhang B 2013 Chin. Phys. B 22 017302
[11] Song Q W, Zhang Y M, Han J, Tanner S P, Dimitrijev S, Zhang Y M, Tang X Y, Guo H 2013 Chin. Phys. B 22 027302
[12] Liu L, Yang Y T, Ma X H 2011 Chin. Phys. B 20 127204
[13] Zheng L, Zhang F, Liu S B, Dong L, Liu X F, Fan Z C, Liu B, Yan G G, Wang L, Zhao W S, Sun G S, He Z, Yang F H 2013 Chin. Phys. B 22 097302
[14] Liu Z L 2009 Power Electron. 6 10 (in Chinese) [刘忠立 2009 电力电子 6 10]
[15] Gao S P, Zhu T 2012 Acta Phys. Sin. 61 137103 (in Chinese) [高尚鹏, 祝桐 2012 61 137103]
[16] L M Y, Chen Z W, Li L X, Liu R P, Wang W K 2006 Acta Phys. Sin. 55 3576 (in Chinese) [吕梦雅, 陈洲文, 李立新, 刘日平, 王文魁 2006 55 3576]
[17] Zhou P L, Zheng S K, Tian Y, Zhang S M, Shi R Q, He J F, Yan X B 2014 Acta Phys. Sin. 63 053102 (in Chinese) [周鹏力, 郑树凯, 田言, 张朔铭, 史茹倩, 何静芳, 闫小兵 2014 63 053102]
[18] Gonze X, Beuken J M, Caracas R, Detraux F, Fuchs M, Rignanese G M, Sindic L, Verstraete M, Zerah G, Jollet F, Torrent M, Roy A, Mikami M, Ghosez P, Raty J Y, Allan D C 2002 Comput. Mater. Sci. 25 478
[19] Troullier N, Martins J L 1990 Solid State Commun. 74 613
[20] Ashcroft N W, Mermin N D 1976 Solid State Physic (Independence Ky: Thomson Learning Inc) p81
[21] Käckell P, Wenzien B, Bechstedt F 1994 Phys. Rev. B 50 10761
[22] Choyke W J, Hamilton D R, Patrick L 1964 Phys. Rev. 133 A1163
[23] Feng S Q, Zhao J L, Cheng X L 2013 J. Appl. Phys. 113 023301
[24] Thompson M O, Galvin G J, Mayer J W, Peercy P S, Poate J M, Jacobson D C, Cullis A G, Chew N G 1984 Phys. Rev. Lett. 52 2360
[25] Poate J M, Brown W L 1982 Phys. Today 35 24
[26] Feldman D W, Parker J H, Choyke W J, Patrick L 1968 Phys. Rev. 173 787
[27] Olego D, Cardona M 1982 Phys. Rev. B 25 1151
[28] Olego D, Cardona M, Vogl P 1982 Phys. Rev. B 25 3878
[29] Karch K, Pavone P, Windl W, Schtt O, Strauch D 1994 Phys. Rev. B 50 17054
[30] Serrano J, Strempfer J, Cardona M, Schwoerer-Böhning M, Requardt H, Lorenzen M, Stojetz B, Pavone P, Choyke W J 2002 Appl. Phys. Lett. 80 4360
[31] Huang K, Han R Q 1988 Solid State Physics (1st Ed.) (Beijing: Higher Education Press) pp63-107 (in Chinese) [黄昆, 韩汝琦1988固体物理学 (第一版) (北京:高等教育出版社) 第63–107页]
[32] Wang M M, Gao T, Yu Y, Zeng X W 2012 Eur. Phys. J. Appl. Phys. 57 10104
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