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Pixelated polarizer array can be used in the real-time measurement of Stokes parameters. In this paper, pixelated polarizer array based on the aluminum nano-grating is designed and fabricated, and the fabrication technology is electron beam exposure technology. The size of each unit is 7.4 μm, and the polarization directions of each adjacent 2×2 units in the polarizer array are 0, π/4, π/2, and 3π/4. The period, duty cycle, depth and surface type of the grating are 140 nm, 0.5, 100 nm and rectangle type, respectively. The scanning electron micrographs of the pixelated polarizer array show that there is no disconnection, cross and pollution on the fabricated metal nano-grating lines. The nano-grating lines are straight and uniform in thickness, and the surface type of the grating is ideal rectangular type. The polarization optical micrographs show that the pixelated polarizer array has good polarization characteristics. The maximum polarization transmissivity can reach 79.3%, and the extinction ratio can arrive at 454. Furthermore, the pixelated polarizer array is integrated with the charge coupled devise chip, and the Stokes parameters can be calculated from one frame, then the degree of linear polarization and angle of linear polarization can be obtained. Thus, the polarization enhancement of image is achieved, which can be used in the anti-stealth and recognition.
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Keywords:
- pixelated polarizer array /
- metal nanometer grating /
- polarization transmissivity /
- extinction ratio
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[1] Frish V K 1949 Experientia 5 142
[2] Collett M, Collett T S, Bisch S, Wehner R 1998 Nature 394 269
[3] Labhart T 1999 J. Exp. Biol. 201 757
[4] Shashar N, Rutledge P, Cronin T W 1996 J. Exp. Biol. 199 2077
[5] Chu J, Zhao K, Zhang Q, Wang T 2008 Sens. Actuators A: Phys. 148 75
[6] Chu J K, Wang Z W, Zhang Y J, Wang Y L 2012 Opt. Precision Eng. 20 2237(in Chinese)[褚金奎, 王志文, 张英杰, 王寅龙 2012 光学精密工程 20 2237]
[7] Nordin G P, Meier J T, Deguzman P C, Jones M W 1999 J. Opt. Soc. Am. A 16 1168
[8] Brock N J, Kimbrugh B T, Millierd J E 2011 Proc. of SPIE San Diego, California, USA, August 21, 2011 p81600W-1
[9] Li X D, Tao G, Yang Y Z 2011 Opt. Laser Eng. 33 53
[10] Ma Z C, Xu Z M, Peng J, Sun T Y, Chen X G, Zhao W Y, Liu S S, Wu X H, Zou C, Liu S Y 2014 Acta Phys. Sin. 63 039101(in Chinese)[马智超, 徐智谋, 彭静, 孙堂友, 陈修国, 赵文宇, 刘思思, 武兴会, 邹超, 刘世元 2014 63 039101]
[11] Kang Y L, Qiu Y, Lei Z K, Hu M 2005 Opt. Laser Eng. 43 847
[12] Lei Z K, Kang Y L, Qiu Y, Hu M, Cen H 2004 Chin. Phys. Lett. 21 1377
[13] Zhang Z, Zhang Q, Cheng T, Gao J, Wu X 2013 Opt. Eng. 52 103109
[14] Wang M, Cen Y W, Yu X L, Hu X F, Zhu P P 2008 Acta Phys. Sin. 57 6202(in Chinese)[汪敏, 岑豫皖, 余晓流, 胡小方, 朱佩平 2008 57 6202]
[15] Tahara T, Shimozato Y, Xia P, Ito Y, Awatsuji Y, Nishio K, Ura S, Matoba O, Kubota T 2012 Opt. Express 20 19806
[16] Creath K, Goldstein G 2012 Biomed. Opt. Express 3 2866
[17] Gruev V 2011 Opt. Express 19 24361
[18] Zhang Q C, Zhang Z G, Zhao Y, Cheng T, Wu X P 2013 Chinese Patent 201310030039.1 (2013-01-25) (in Chinese)[张青川, 张志刚, 赵旸, 程腾, 伍小平 2013 中国专刊专利申请号: 201310030039.1[2013-01-25]]
[19] Zhao X, Boussaid F, Bermak A, Chigrinov V G 2011 Opt. Express 19 5565
[20] Gruev V, Ortu A, Lazarus N, Spiegel J V, Engheta N 2007 Opt. Express 15 4994
[21] Yang Z Y, Lu Y F 2007 Opt. Express 15 9510
[22] Meng F T, Chu J K, Han Z T, Guo Q 2009 Acta Photon. Sin. 38 951(in Chinese)[孟凡涛, 褚金奎, 韩志涛, 郭庆 2009 光子学报 38 951]
[23] Luo Q, Huang L H, Gu N T, Rao C H 2012 Chin. Phys. B 21 094201
[24] Wang J P, Jin Y X, Ma J Y, Shao J D, Fan Z X 2010 Chin. Phys. B 19 104201
[25] Yu D, Wang H, Liu H P, Wang J, Jiang Y Y, Sun X D 2011 Chin. Phys. B 20 114217
[26] Zhang W F, Kong W J, Yun M J, Liu J H, Sun X 2012 Chin. Phys. B 21 094218
[27] Pan P, An J M, Wang H J, Wang Y, Zhang J S, Wang L L, Dai H Q, Zhang X G, Wu Y D, Hu X W 2014 Chin. Phys. B 23 044210
[28] Bokor N, Shechter R, Davidson N, Friesem A A, Hasman E 2001 Appl. Opt. 40 2076
[29] Zhang N, Chu J K, Zhao K C, Meng F T 2006 Chin. J. Sens. Actuat. 19 1739(in Chinese)[张娜, 褚金奎, 赵开春, 孟凡涛 2006 传感技术学报 19 1739]
[30] Xie H M, Kishimoto S, Shinya N 2000 Opt. Laser Technol. 32 361
[31] Xie H M, Kishimoto S, Li Y J, Liu Q J, Zhao Y P 2009 Microelectron. Reliab. 49 727
[32] Zhao Y R, Lei Z K, Xing Y M 2014 Exp. Mech. 54 45
[33] Xie H M, Dai F L, An B Z, Zhang W 2000 Opt. Tech. 26 526(in Chinese)[谢惠民, 戴福隆, 岸本哲, 张维 2000 光学技术 26 526]
[34] Gruev V, Perkins R 2010 IEEE International Symposium on Circuits and Systems Paris, France, May 30-June 2, 2010 p629
[35] Gruev V, Perkins R, York T 2010 Opt. Express 18 19087
[36] Gruev V, Spiegel J V, Engheta N 2010 Opt. Express 18 19292
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