Characteristics of neutral atom deposition under channel effect in a laser standing wave field

Zhang Wen-Tao; Zhu Bao-Hua; Wang Jie-Jun; Xiong Xian-Ming; Huang Ya-Qin

doi:10.7498/aps.62.243201

Abstract

Based on semi-classical theory, a model of the interaction between neutral atoms and the laser standing wave field is established in this paper. The trajectories and the deposition characteristics are analyzed under channel effect, and the values of full width at half maximum of nano-grating are 0.532, 12.16 and 96.70 nm when the divergence angle, spherical and chromatic aberration are discussed, respectively. The simulation results show that the contrast of the stripe decreases with the increasing of divergence angle of the atomic beam. Also, the contrasts of the stripe are 85.2:1 and 5.33:1 when the divergence angles equal 0.1 and 0.3 mrad. When divergence angle increases over 0.5 mrad, the splitting of the stripe takes place, leading to the degradation of the deposition.

Keywords:

Authors and contacts

1.
School of Electronic Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11064002), the Natural Science Foundation of Guangxi, China (Grant Nos. 2012 GXNSFAA053229, 2013 GXNSFDA019002), the Science Research and Technology Development Project of Guangxi, China (Grant No. 1346010-5), the Science Research and Technology Development Program of Guilin City, China (Grant No. 20130122-1), and the Program for Innovation Research Team of Guilin University of Electronic Technology, China.

References

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Cited By

[1]	Zhang W T, Zhu B H 2010 Acta Phys. Sin. 59 5392 (in Chinese) [张文涛, 朱保华 2010 59 5392]
[2]	Prentiss M, Timp G, Bigelow N 1992 Appl. Phys. Lett. 60 1027
[3]	Anderson W R, Brandley C C, McClelland J J 1999 Phys. Rev. A 59 2476
[4]	Camposeo A, Cervelli F, Tantussi F 2003 Mater. Sci. Engineer. C 23 1087
[5]	Cai W Q, Li Q W 1994 Acta Phys. Sin. 48 611 (in Chinese) [蔡惟泉, 李全文 1994 48 611]
[6]	He M, Wang J, Zhan M S 2003 Chin. Opt. Lett. 1 497
[7]	Chen Y P, Chen X N, Li Z 2003 Micronanoelectron. Technol. 7 546 (in Chinese) [陈元培, 陈旭南, 李展 2003 微纳电子技术 7 546]
[8]	Lu X D, Li T B, Ma Y 2010 Chin. Phys. B 19 123201
[9]	Zhang W T, Zhu B H, Huang J, Xiong X M, Jiang Q B 2012 Chin. Phys. B 21 033301
[10]	Zhang W T, Zhu B H, Xiong X M 2012 Chin. Phys. Lett. 32 033301

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Catalog

Vol. 62, Issue 24 - 2013-12-20

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