SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al

Rong Jia-Ling; Chen Yun-Han; Zhou Jie; Zhang Xue; Wang Li; Cao Jin

doi:10.7498/aps.62.228502

Abstract

In this paper the resistive mechanism of the device with structure of ITO/PMMA/Al and the relevant SPICE simulation circuit are investigated. By optimizing the annealing temperature of PMMA, the devices can achieve continuous erasable-readable-writeable-readable operation. Based on the surface morphology researches of PMMA with different annealing temperatures, a physics model of nonlinear charge-drift mechanism in doping system is established to explain the resistance characteristics of the organic device. And the state equations are established to describe the interface movement of different doping regions in the model. Then, the SPICE simulation circuit is set up with feedback control integrator. Finally, substituting the measured parameters of device into the simulation circuit, we obtain the current-voltage simulation curve which is in good agreement with the actual results of the device. The results verify the resistance mechanism of nonlinear charge-drift in our device, and the applicability of the SPICE simulation of nonlinear charge-drift model based on inorganic memristors to the organic resistive memory.

Keywords:

Authors and contacts

1.
Shanghai University School of Materials Science and Engineering, Shanghai 200072, China;
2.
Key Laborary of Advanced Display and System Applications, Shanghai University, Ministry of Education, Shanghai 200072, China
Funds: Project supported by the Shanghai Natural Science Funds, China (Grant No. 09ZR1411900), the Shanghai Science and Technology Commission Project, China (Grant No. 11100703200), and the Shanghai University Innovation Funds, China (Grant No. sdcx2012063).

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Cited By

[1]	Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2011 Acta Phys. Sin. 61 120502 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[2]	Liu S, Li Y T, Wang Y, Long S B, L H B, Liu Q, Wang Q, Zhang S, Lian W T, Liu M 2011 Chin. Phys. B 20 017305
[3]	Zhang T, Bai Y, Jia C H, Zhang W F 2012 Chin. Phys. B 21 107304
[4]	Hu H, Cai J M, Zhang C D, Gao M, Pan Y, Du S X, Sun Q F, Gao H J, Xie X C, Niu Q 2010 Chin. Phys. B 19 037202
[5]	Lai Y S, Tu C H, Kwong D L, Chen J S 2005 Appl. Phys. Lett. 87 122101
[6]	Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763
[7]	Mahapatro A K, Agrawal R, Ghosh S 2004 J. Appl. Phys. 96 3583
[8]	Majumdar H S, Baral J K, Österbacka R, Ikkalab O, Stubba H 2005 Org. Electron. 6 188
[9]	Ma L P, Liu J, Yang Y 2002 Appl. Phys. Lett. 80 2997
[10]	Möller S, Perlov C, Jackson W, Taussig C, Forrest S R 2003 Nature 426 166
[11]	Ji Y, Cho B, Song S, Kim T W, Choe M, Kahng Y H, Lee T 2010 Adv. Mater. 22 3071
[12]	Joo W J, Choi T L, Lee K H, Chung Y S 2007 J. Phys. Chem. B 111 7756
[13]	Ma L, Xu Q, Yang Y 2004 Appl. Phys. Lett. 84 4908
[14]	Reddy V S, Karak S, Ray S K, Dhar A 2009 Org. Electron. 10 138
[15]	Baral J K, Majumdar H S, Laiho A, Jiang H, Kauppinen E I, Ras R H A, Ruokolainen J, Ikkala O, Öesterbacka R 2008 Nanotechnology 19 035203
[16]	Carbone A, Kotowska B K, Kotowski D 2005 Phys. Rev. Lett. 95 236601
[17]	Mark P, Helfrich W 1962 J. Appl. Phys. 33 205
[18]	Lin H T, Pei Z, Chan Y J 2007 IEEE Electron. Dev. Lett. 28 569
[19]	Ling Q D, Song Y, Ding S J, Zhu C X, Chan D S H, Kwong D L, Kang E T, Neoh K G 2005 Adv. Mater. 17 455
[20]	Ling Q D, Lim S L, Song Y, Zhu C X, Chan D S H, Kang E T, Neoh K G 2007 Langmuir 23 312
[21]	Song Y, Ling Q D, Zhu C, Kang E T, Chan D S H, Wang Y H, Kwong D L 2006 IEEE Electron. Dev. Lett. 27 154
[22]	Song Y, Tan Y P, Teo E Y H, Zhu C X, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508
[23]	Wang M L, Zhou J, Gao X D, Ding B F, Shi Z, Sun X Y, Ding X M, Hou X Y 2007 Appl. Phys. Lett. 91 143511
[24]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[25]	Zdenek B, Biolek D, Biolková V 2009 Radioengineering 18 210
[26]	Chua L O 2011 Appl. Phys. A: Mater. Sci. Process 102 765
[27]	Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137701 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137701]
[28]	Bao B C, Hu W, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡文, 许建平, 刘中, 邹凌 2011 60 120502]
[29]	Liang Y, Yu D S, Chen H 2013 Acta Phys. Sin. 62 158501 (in Chinese) [梁燕, 于东升, 陈昊 2013 62 158501]
[30]	Bao B C, Xu J P, Zhou G H, Ma Z H, Zou L 2011 Chin. Phys. B 20 120502

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Vol. 62, Issue 22 - 2013-11-20

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