Bi Jin-Shun, Liu Gang, Luo Jia-Jun, Han Zheng-Sheng. Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process nodeJ. Acta Physica Sinica, 2013, 62(20): 208501. DOI: 10.7498/aps.62.208501