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The REST operation for multilevel storage in phase change random access memory cell is investigated via numerical simulation. A three-dimensional memory cell model is built, and the physical property variation is calculated by solving the Laplace equation and the heat conduction equation with finite element method. The phase distribution in phase change layer and the total resistance of the cell are examined. The influences of cell structure size variation on multilevel storage process and states are analyzed. The simulation results demonstrate that multilevel storage can be achieved through accurate electrical pulse control while the variations of phase change layer thickness and bottom electrode contact size have relatively large effect on the storage state. The storage states can all keep stable for more than 10 years at 80 ℃.
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Keywords:
- phase change random access memory /
- multilevel storage /
- numerical simulation /
- finite element method
[1] Burr G W, Breitwisch M J, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras L A, Padilla A, Rajendran B, Raoux S, Shenoy R S 2010 J. Vacuum Sci. Technol. B 28 223
[2] Fantini A, Perniola L, Armand M, Nodin J F, Sousa V, Persico A, Cluzel J, Jahan C, Maitrejean S, Lhostis S, Roule A, Dressler C, Reimbold G, DeSalvo B, Mazoyer P, Bensahel D, Boulanger F 2009 IEEE International Memory Workshop Monterey, USA, May 10-14, 2009 p66
[3] Yoon S M, Jung S W, Lee S Y, Park Y S, Yu B G 2009 IEEE Electron Dev. Lett. 30 371
[4] Bruns G, Merkelbach P, Schlockermann C, Salinga M, Wuttig M, Happ T D, Philipp J B, Kund M 2009 Appl. Phys. Lett. 95 043108
[5] Liao Y B, Xu L, Yang F, Liu W Q, Liu D, Xu J, Ma Z Y, Chen K J 2010 Acta Phys. Sin. 59 6563 (in Chinese) [廖远宝, 徐岭, 杨菲, 刘文强, 刘东, 徐骏, 马忠元, 陈坤基 2010 59 6563]
[6] Zhang Z F, Zhang Y, Feng J, Cai Y F, Lin Y Y, Cai B C, Tang T A, Chen B M 2007 Acta Phys. Sin. 56 4224 (in Chinese) [张祖发, 张胤, 冯洁, 蔡燕飞, 林殷茵, 蔡炳初, 汤庭鳌, 陈邦明 2007 56 4224]
[7] Raoux S, Rettner C T, Jordan-Sweet J L, Kellock A J, Topuria T, Rice P M, Miller D C 2007 J. Appl. Phys. 102 094305
[8] Papandreou N, Pantazi A, Sebastian A, Breitwisch M, Lam C, Pozidis H, Eleftheriou E 2010 Proceedings of the 2010 17th IEEE International Conference on Electronics, Circuits and Systems Piscataway, USA, December 12-15, 2010 p1017
[9] Lai Y F, Feng J, Qiao B W, Ling Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese) [赖云锋, 冯洁, 乔保卫, 凌云, 林殷茵, 汤庭鳌, 蔡炳初, 陈邦明 2006 55 4347]
[10] Braga S, Pashkov N, Perniola L, Fantini A, Cabrini A, Torelli G, Sousa V, De Salvo B, Reimbold G 2011 3rd IEEE International Memory Workshop Monterey, USA, May 22-25, 2011 5873226
[11] Papandreou N, Pozidis H, Mittelholzer T, Close G F, Breitwisch M, Lam C, Eleftheriou E 2011 3rd IEEE International Memory Workshop Monterey, USA, May 22-25, 2011 5873231
[12] Kim D H, Merget F, Forst M, Kurz H 2007 J. Appl. Phys. 101 064512
[13] Hu Z Q, Yuan C W, Li L 2009 J. Huazhong Univ. Sci. Tech. (Natural Science Edition) 37 89 (in Chinese) [胡作启, 袁成伟, 李兰 2009 华中科技大学学报(自然科学版) 37 89]
[14] Kang D H, Ahn D H, Kim K B, Webb J F, Yi K W 2003 J. Appl. Phys. 94 3536
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[1] Burr G W, Breitwisch M J, Franceschini M, Garetto D, Gopalakrishnan K, Jackson B, Kurdi B, Lam C, Lastras L A, Padilla A, Rajendran B, Raoux S, Shenoy R S 2010 J. Vacuum Sci. Technol. B 28 223
[2] Fantini A, Perniola L, Armand M, Nodin J F, Sousa V, Persico A, Cluzel J, Jahan C, Maitrejean S, Lhostis S, Roule A, Dressler C, Reimbold G, DeSalvo B, Mazoyer P, Bensahel D, Boulanger F 2009 IEEE International Memory Workshop Monterey, USA, May 10-14, 2009 p66
[3] Yoon S M, Jung S W, Lee S Y, Park Y S, Yu B G 2009 IEEE Electron Dev. Lett. 30 371
[4] Bruns G, Merkelbach P, Schlockermann C, Salinga M, Wuttig M, Happ T D, Philipp J B, Kund M 2009 Appl. Phys. Lett. 95 043108
[5] Liao Y B, Xu L, Yang F, Liu W Q, Liu D, Xu J, Ma Z Y, Chen K J 2010 Acta Phys. Sin. 59 6563 (in Chinese) [廖远宝, 徐岭, 杨菲, 刘文强, 刘东, 徐骏, 马忠元, 陈坤基 2010 59 6563]
[6] Zhang Z F, Zhang Y, Feng J, Cai Y F, Lin Y Y, Cai B C, Tang T A, Chen B M 2007 Acta Phys. Sin. 56 4224 (in Chinese) [张祖发, 张胤, 冯洁, 蔡燕飞, 林殷茵, 蔡炳初, 汤庭鳌, 陈邦明 2007 56 4224]
[7] Raoux S, Rettner C T, Jordan-Sweet J L, Kellock A J, Topuria T, Rice P M, Miller D C 2007 J. Appl. Phys. 102 094305
[8] Papandreou N, Pantazi A, Sebastian A, Breitwisch M, Lam C, Pozidis H, Eleftheriou E 2010 Proceedings of the 2010 17th IEEE International Conference on Electronics, Circuits and Systems Piscataway, USA, December 12-15, 2010 p1017
[9] Lai Y F, Feng J, Qiao B W, Ling Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese) [赖云锋, 冯洁, 乔保卫, 凌云, 林殷茵, 汤庭鳌, 蔡炳初, 陈邦明 2006 55 4347]
[10] Braga S, Pashkov N, Perniola L, Fantini A, Cabrini A, Torelli G, Sousa V, De Salvo B, Reimbold G 2011 3rd IEEE International Memory Workshop Monterey, USA, May 22-25, 2011 5873226
[11] Papandreou N, Pozidis H, Mittelholzer T, Close G F, Breitwisch M, Lam C, Eleftheriou E 2011 3rd IEEE International Memory Workshop Monterey, USA, May 22-25, 2011 5873231
[12] Kim D H, Merget F, Forst M, Kurz H 2007 J. Appl. Phys. 101 064512
[13] Hu Z Q, Yuan C W, Li L 2009 J. Huazhong Univ. Sci. Tech. (Natural Science Edition) 37 89 (in Chinese) [胡作启, 袁成伟, 李兰 2009 华中科技大学学报(自然科学版) 37 89]
[14] Kang D H, Ahn D H, Kim K B, Webb J F, Yi K W 2003 J. Appl. Phys. 94 3536
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