Optical transition of the charged excitons in InAs single quantum dots

Li Wen-Sheng; Sun Bao-Quan

doi:10.7498/aps.62.047801

Abstract

Quantum dot (QD) samples studied in the experiment are grown by molecular-beam epitaxy on semi-insulating GaAs substrates. The photoluminescences (PLs) of the excitons in a single QD are measured at 5 K. The PL spectra of the excitons, biexcitons and charged excitons are identified by measuring and analyzing both PL peaks of the circular and linear polarization and power-dependent PL properties. The charged exciton emissions can be tuned by applying a bias voltage, i.e., negatively charged excitons are changed into positively charged excitons by changing the voltage from 1.0 to -1.0 V. It is shown that the electron-spin will slowly relax compared with that of the hole when they relax from wetting layer into the QD.

Keywords:

Authors and contacts

Li Wen-Sheng¹,
Sun Bao-Quan²

1.
College of Chemical Engineering, Tongliao ProfessionalEducation College, Tongliao 028000, China;
2.
The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funds: Project supported by the National Natural Science Foundation of China (Grand No. 11074246).

References

[1]	Awschalom D D, Loss D, Samarth N 2002 Semiconductor Spintronics and Quantum Computing (Berlin: Springer) p277
[2]	Yuan Z, Kardynal B E, Stevenson R M, Shields A J, Lobo C J, Cooper K, Beattie N S, Ritchie D A, Pepper M 2002 Science 295 102
[3]	Urbaszek B, Warburton R J, Karrai K, Gerardot, Petroff P M, Garcia J M 2003 Phys. Rev. Lett. 90 247403
[4]	Ediger M, Bester G, Gerardot B D, Badolato A, Petroff P M, Karrai K, Zunger A, Warburton R J 2007 Phys. Rev. Lett. 98 036808
[5]	Smith J M, Dalgaruo P A, Warburton R J, Govorov, Karrai K, Gerardot B D, Petroff P M 2005 Phys. Rev. Lett. 94 197402
[6]	Ware M E, Stinaff E A, Gammon D, Doty M F, Bracker A S, Gershoni D, Korenev V L, Badescu S C, Lyanda-Geller Y, Reinecke T L 2005 Phys. Rev. Lett. 95 177403
[7]	Dou X M, Sun B Q, Jiang D S, Ni H Q, Niu Z C 2011 Phys. Rev. B 84 033302
[8]	Dou X M, Sun B Q, Jiang D S, Ni H Q, Niu Z C 2012 Europhys. Lett. 98 17007
[9]	Huang S S, Niu Z C, Ni H Q, Xiong Y H, Zhan F, Fang Z D, Xia J B 2007 J. Crystal Growth 301 751
[10]	Feucker M, Seguin R, Rodt S, Hoffmann A, Bimberg D 2008 Appl. Phys. Lett. 92 063116
[11]	Chang X Y, Dou X M, Sun B Q, Xiong Y H, Niu Z C, Ni H Q, Jiang D S 2009 J. Appl. Phys. 106 103716
[12]	Cortez S, Krebs O, Laurent S, Senes M, Marie X, Voisin P, Ferreira R, Bastard G, Gerard J M, Amand T 2002 Phys. Rev. Lett. 89 207401

Cited By

[1]	Awschalom D D, Loss D, Samarth N 2002 Semiconductor Spintronics and Quantum Computing (Berlin: Springer) p277
[2]	Yuan Z, Kardynal B E, Stevenson R M, Shields A J, Lobo C J, Cooper K, Beattie N S, Ritchie D A, Pepper M 2002 Science 295 102
[3]	Urbaszek B, Warburton R J, Karrai K, Gerardot, Petroff P M, Garcia J M 2003 Phys. Rev. Lett. 90 247403
[4]	Ediger M, Bester G, Gerardot B D, Badolato A, Petroff P M, Karrai K, Zunger A, Warburton R J 2007 Phys. Rev. Lett. 98 036808
[5]	Smith J M, Dalgaruo P A, Warburton R J, Govorov, Karrai K, Gerardot B D, Petroff P M 2005 Phys. Rev. Lett. 94 197402
[6]	Ware M E, Stinaff E A, Gammon D, Doty M F, Bracker A S, Gershoni D, Korenev V L, Badescu S C, Lyanda-Geller Y, Reinecke T L 2005 Phys. Rev. Lett. 95 177403
[7]	Dou X M, Sun B Q, Jiang D S, Ni H Q, Niu Z C 2011 Phys. Rev. B 84 033302
[8]	Dou X M, Sun B Q, Jiang D S, Ni H Q, Niu Z C 2012 Europhys. Lett. 98 17007
[9]	Huang S S, Niu Z C, Ni H Q, Xiong Y H, Zhan F, Fang Z D, Xia J B 2007 J. Crystal Growth 301 751
[10]	Feucker M, Seguin R, Rodt S, Hoffmann A, Bimberg D 2008 Appl. Phys. Lett. 92 063116
[11]	Chang X Y, Dou X M, Sun B Q, Xiong Y H, Niu Z C, Ni H Q, Jiang D S 2009 J. Appl. Phys. 106 103716
[12]	Cortez S, Krebs O, Laurent S, Senes M, Marie X, Voisin P, Ferreira R, Bastard G, Gerard J M, Amand T 2002 Phys. Rev. Lett. 89 207401

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板