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Aluminum gallium nitride (AlGaN) thin films are prepared by pulsed laser deposition with different silicon doping concentrations from 0.5% to 2%. The field emission measurement shows that the 1% Si-doped AlGaN film has the best field emission property. Compared with undoped film, the Si-doped film has a large emission current density and a low threshold field. The increase of doping concentration can increase the carrier concentration, which will add a number of supply electrons, thereby improving greatly the FE property of AlGaN film. With the doping concentration further increasing, the defect of film increases and the electron mobility reduces. The reduction of the internal supply electron is greater than the contribution of the increase of electrons concentration, which induces the field emission performance to deteriorate. This study will provide a reliable basis for designing high-performance field emission devices.
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Keywords:
- aluminum gallium nitride /
- field emission /
- Si doping
[1] Yuan L Y, Tao Y T, Chen J, Dai J J, Song T, Ruan M Y, Ma Z W, Gong L, Liu K, Zhang X H, Hu X J, Zhou J, Wang Z L 2011 Adv. Funct. Mater. 21 2150
[2] Zhang X H, Gong L, Liu K, Cao Y Z, Xiao X, Sun W M, Hu X J, Gao Y H, Chen J, Zhou J, Wang Z L 2010 Adv. Mater. 22 5292
[3] Zhao W, Wang R Z, Song X M, Wang Hao, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 0921011
[4] Yoder M N 1996 IEEE Trans. Electron Dev. 43 1633
[5] Wang R Z, Wang B, Yan H 2009 Mater. China 28 306 (in Chinese) [王如志, 王波, 严辉 2009 中国材料进展 28 306]
[6] You J B, Zhang X W, Cai P F, Dong J J, Gao Y, Yin Z G, Chen N F, Wang R Z, Yan H 2009 Appl. Phys. Lett. 94 2621051
[7] Thapa R, Saha B, Chattopadhyay K K 2009 Appl. Surf. Sci. 255 4536
[8] Xu L C, Wang R Z, Yan H 2012 J. Phys. Chem. C 116 1282
[9] Song Z W, Wang R Z, Zhao W, Wang B, Yan H 2012 J. Phys. Chem. C 116 1780
[10] Taniyasu Y, Kasu M, Toshiki M 2004 Appl. Phys. Lett. 84 2115
[11] Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾璐, 谢二庆, 潘孝军, 张振兴 2009 58 3377]
[12] Fowler R H, Nordhein L W 1928 Proc. R. Soc. Lond. A 119 173
[13] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 85 1540
[14] Cutler P H, Miskovsky N M, Lerner P B, Chung M S 1999 Appl. Surf. Sci. 146 126
[15] Fursey G 2005 Field Emission in Vacuum Microelectronics (1st Ed.) (New York: Springer) p86
[16] Zhou Q G, Zhai J W, Yao X 2007 Acta Phys. Sin. 56 6667 (in Chinese) [周歧刚, 翟继卫, 姚熹 2007 56 6667]
[17] Shi S C, Chen C F, Chattopadhyay S 2005 Appl. Phys. Lett. 87 073109
[18] Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H, Hou X Y 2005 Phys. Rev. B 72 125310
[19] Farid J S, Patil K R, Pillai V K 2010 J. Phys. Chem. C 114 3843
[20] Li J J, Wu H H, Long B Y, L X Y, Hu C Q, Jin Z S 2005 Acta Phys. Sin. 54 1447 (in Chinese) [李俊杰, 吴汉华, 龙北玉, 吕宪义, 胡超权, 金曾孙 2005 54 1447]
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[1] Yuan L Y, Tao Y T, Chen J, Dai J J, Song T, Ruan M Y, Ma Z W, Gong L, Liu K, Zhang X H, Hu X J, Zhou J, Wang Z L 2011 Adv. Funct. Mater. 21 2150
[2] Zhang X H, Gong L, Liu K, Cao Y Z, Xiao X, Sun W M, Hu X J, Gao Y H, Chen J, Zhou J, Wang Z L 2010 Adv. Mater. 22 5292
[3] Zhao W, Wang R Z, Song X M, Wang Hao, Wang B, Yan H, Chu P K 2010 Appl. Phys. Lett. 96 0921011
[4] Yoder M N 1996 IEEE Trans. Electron Dev. 43 1633
[5] Wang R Z, Wang B, Yan H 2009 Mater. China 28 306 (in Chinese) [王如志, 王波, 严辉 2009 中国材料进展 28 306]
[6] You J B, Zhang X W, Cai P F, Dong J J, Gao Y, Yin Z G, Chen N F, Wang R Z, Yan H 2009 Appl. Phys. Lett. 94 2621051
[7] Thapa R, Saha B, Chattopadhyay K K 2009 Appl. Surf. Sci. 255 4536
[8] Xu L C, Wang R Z, Yan H 2012 J. Phys. Chem. C 116 1282
[9] Song Z W, Wang R Z, Zhao W, Wang B, Yan H 2012 J. Phys. Chem. C 116 1780
[10] Taniyasu Y, Kasu M, Toshiki M 2004 Appl. Phys. Lett. 84 2115
[11] Jia L, Xie E Q, Pan X J, Zhang Z X 2009 Acta Phys. Sin. 58 3377 (in Chinese) [贾璐, 谢二庆, 潘孝军, 张振兴 2009 58 3377]
[12] Fowler R H, Nordhein L W 1928 Proc. R. Soc. Lond. A 119 173
[13] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 85 1540
[14] Cutler P H, Miskovsky N M, Lerner P B, Chung M S 1999 Appl. Surf. Sci. 146 126
[15] Fursey G 2005 Field Emission in Vacuum Microelectronics (1st Ed.) (New York: Springer) p86
[16] Zhou Q G, Zhai J W, Yao X 2007 Acta Phys. Sin. 56 6667 (in Chinese) [周歧刚, 翟继卫, 姚熹 2007 56 6667]
[17] Shi S C, Chen C F, Chattopadhyay S 2005 Appl. Phys. Lett. 87 073109
[18] Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H, Hou X Y 2005 Phys. Rev. B 72 125310
[19] Farid J S, Patil K R, Pillai V K 2010 J. Phys. Chem. C 114 3843
[20] Li J J, Wu H H, Long B Y, L X Y, Hu C Q, Jin Z S 2005 Acta Phys. Sin. 54 1447 (in Chinese) [李俊杰, 吴汉华, 龙北玉, 吕宪义, 胡超权, 金曾孙 2005 54 1447]
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