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Silicon oxide films containing nanocrystalline Si (nc-Si) are fabricated by magnetron sputtering method followed by one-step-annealing, two-step-annealing and rapid thermal annealing (RTA), separately. In silicon-rich oxide films containing ～ 42.63 at.% of Si, dense nc-Si in a magnitude of 1012/cm-2 are obtained in all of the samples subjected to three different thermal treatments. In the two-step-annealing sample, the density of nc-Si reachs a maximum (2.2× 1012/cm-2), and the nc-Si is well crystallized and uniform in size distribution. In the one-step-annealing sample, the density of nc-Si is silightly lower than in the two-step-annealing sample, and large deficiently crystallized nc-Si is observed in the sample. The RTA leads to the lowest density of nc-Si with the largest size distribution among the three samples. Moreover, large nc-Si formed by coalescence of small ones and twin crystals are also discovered in the RTA sample. It is believed that nucleation at the early stage of nanocrystal growth influences the density and the micostructure of nc-Si. The annealing at low temperature in the two-step-annealing facilitates the formation of new nulcei, which is beneficial to improving the quality and density of nc-Si.
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Keywords:
- nanocrystalline Si /
- silicon rich oxide films /
- thermal treatment
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[2] Marconi A, Anocpchenko A, Wang M, Pucker G, Bellutti P, Pavesi L 2009 Appl. Phys. Lett. 94 221110
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[12] Kachurin G A, Cherkova S G, Marin D V, Yankov R A, Deutschmann M 2008 Nanotechnology 19 355305
[13] Philipp H R 1972 J. Non-Crys. Solids 8-10 627
[14] Hao X J, Cho E C, Scardera G, Bellet-Amalric E, Bellet D, Shen Y S, Huang S, Huang Y D, Conibeer G, Green M A 2009 Thin Solid Films 517 5646
[15] Cheng Q, Xu S, Ostrikov K K 2010 Acta Materialia 58 560
[16] Pai P G, Chao S S, Takagi Y, Lucovsky G 1986 J. Vac. Sci. Technol. A 4 689
[17] Iacona F, Bongiorno C, Spinella C, Boninelli S, Priolo F 2004 J. Appl. Lett. 95 3723
[18] Chiu Y T, Yeh J T 2005 Solid State Transformation and Heat Treatment (ed Hazotte A, Weinheim: Wiley) p122
[19] Mirabella S, Martino G D, Crupi I, Gibilisco S, Miritello M, Savio R L, Stefano M A, Marco S D, Simone F, Priolo F 2010 J. Appl. Lett. 108 093507
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[1] Pavesi L, Negro L D, Mazzoleni C, Franzo G, Priolo F 2000 Nature 408 440
[2] Marconi A, Anocpchenko A, Wang M, Pucker G, Bellutti P, Pavesi L 2009 Appl. Phys. Lett. 94 221110
[3] Lewis N S 2007 Science 315 798
[4] Conibeer G, Green M A, Konig D, Perez-Wurfl I, Huang S, Hao X, Di D, Shi L, Shrestha S, Puthen-Veetil B, So Y, Zhang B, Wan Z 2011 Prog. Photovolt: Res. Appl. 19 813
[5] Wang Y Q, Smirani R, Ross G G, Schiettekatte F 2005 Phys. Rev. B 71 161310(R)
[6] Heitmann J, Muller F, Zacharias M, Gosele U 2005 Adv. Mater. 17 795
[7] Kahler U, Hofmeister H 2001 Opt. Mater. 17 83
[8] Sui Y P, Ma Z Y, Chen K J, Li W, Xu J, Huang X F 2003 Acta Phys. Sin. 52 989 (in Chinese) [隋妍萍, 马忠元, 陈坤基, 李伟, 徐骏, 黄信凡 2003 52 989]
[9] Sui Y P, Huang X F, Ma Z Y, Li W, Qiao F, Chen K, Chen K J 2003 J. Phys.: Condens. Matter 15 5793
[10] Khriachtechev L, Nikitin T, Rasanen M, Domanskaya A, Boninelli S, Iacona F, Engdahl A, Juhanoja J, Novikov S 2010 J. Appl. Phys. 108 124301
[11] Chen G R, Song C, Xu J, Wang D Q, Xu L, Ma Z Y, Li W, Huang X F, Chen K J 2010 Acta Phys. Sin. 59 5681 (in Chinese) [陈谷然, 宋超, 徐骏, 王旦清, 徐岭, 马忠元, 李伟, 黄信凡, 陈坤基 2010 59 5681]
[12] Kachurin G A, Cherkova S G, Marin D V, Yankov R A, Deutschmann M 2008 Nanotechnology 19 355305
[13] Philipp H R 1972 J. Non-Crys. Solids 8-10 627
[14] Hao X J, Cho E C, Scardera G, Bellet-Amalric E, Bellet D, Shen Y S, Huang S, Huang Y D, Conibeer G, Green M A 2009 Thin Solid Films 517 5646
[15] Cheng Q, Xu S, Ostrikov K K 2010 Acta Materialia 58 560
[16] Pai P G, Chao S S, Takagi Y, Lucovsky G 1986 J. Vac. Sci. Technol. A 4 689
[17] Iacona F, Bongiorno C, Spinella C, Boninelli S, Priolo F 2004 J. Appl. Lett. 95 3723
[18] Chiu Y T, Yeh J T 2005 Solid State Transformation and Heat Treatment (ed Hazotte A, Weinheim: Wiley) p122
[19] Mirabella S, Martino G D, Crupi I, Gibilisco S, Miritello M, Savio R L, Stefano M A, Marco S D, Simone F, Priolo F 2010 J. Appl. Lett. 108 093507
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