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In this paper, Ni88Cu12 thin films are prepared on Si substrates by radio-frequency magnetron co-sputtering. The effects of film thickness and heat treatment on domain structure and magnetic properties are studied. The Ni88Cu12 films with thickness less than 210 nm show weak in-plane anisotropy. After the vacuum magnetic field heat treatment, the crystal grains of all films grow, and the in-plane anisotropy extents of Ni88Cu12 films with thickness less than 210 nm become weaker. The films have different morphological characteristics at different heat treatment temperatures. The surface of the film is very dense before heat treatment. After heat treatment at 300 °C, it forms island shape due to the solid solution between the grains. Compared with the grains on the surface of the heat-treated film at 300 °C, the grains grow further after being heat-treated at 400 °C. Grown grains cover the gaps between the grains, which makes the film surface flat. The results of in-plane normalized hysteresis loop of the films show that the critical thickness of the stripe domains decreases after heat treatment. The stripe domain structure appears in the 210-nm-thick films without being heat-treated. For the film with the heat treatment, its remanence ratio Mr/Ms decreases, and the saturation field Hs increases, and thus leading the perpendicular anisotropy constant Kp to increase. Therefore, the thickness of the stripe domain in the film after being heat-treated decreases. Compared with the films after being heat-treated, the 105-nm-thick as-prepared Ni88Cu12 film has a maximum natural resonance frequency of 2.1 GHz, which is attributed to the uniaxial anisotropy of the as-prepared Ni88Cu12 film. The saturation magnetization of the 300 °C-treated 105-nm-thick film decreases to 3.01 × 105 A/m. However, the saturation magnetization decreases to 5.9 × 105 A/m after heat treatment at 400 °C. Moreover, the ferromagnetic resonance peak of the film narrows after being treated at 300 °C, and the resonance frequency decreases to 1.95 GHz.
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Keywords:
- stripe domain /
- Ni88Cu12 /
- heat treatment
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图 1 斜溅射制备磁性薄膜示意图(HA, 难轴方向)
Figure 1. Schematic diagram of oblique sputtering for preparing magnetic films (HA, hard axis).
图 2 未进行热处理的膜厚为(a) 105 nm, (b) 210 nm和(c) 262 nm的Ni88Cu12薄膜的MFM图像; (d)不同厚度Ni88Cu12薄膜的面内归一化磁滞回线; (e)薄膜的Mr/Ms随薄膜厚度的变化
Figure 2. The MFM images of (a) 105 nm, (b) 210 nm and (c) 262 nm-thick Ni88Cu12 films before heat treatment; (d) in-plane normalized hysteresis loop of Ni88Cu12; (e) remanence ratio vs. film thickness.
图 3 (a)厚度为105 nm的Ni88Cu12薄膜热处理前后的XRD图谱; 厚度为105 nm的Ni88Cu12薄膜在(b)热处理前、(c) 300 ºC热处理后和(d) 400 ºC热处理后的SEM形貌图
Figure 3. (a) XRD pattern of 105 nm-thick Ni88Cu12 film before and after heat treatment; the SEM surface morphology of 105 nm-thick Ni88Cu12 films (b) before heat treatment, (c) after 300 ºC heat treatment, and (d) after 400 ºC heat treatment.
图 4 (a)厚度为105 nm的Ni88Cu12薄膜在热处理前后的归一化磁滞回线; (b)厚度为105 nm的Ni88Cu12薄膜在热处理前、(c) 300 ℃热处理后和(d) 400 ℃热处理后的MFM图像
Figure 4. (a) In-plane normalized hysteresis loop of 105 nm-thick Ni88Cu12 film before and after heat treatment; The MFM images of 105 nm-thick Ni88Cu12 films (b) before heat treatment, (c) after 300 ºC heat treatment, and (d) after 400 ºC heat treatment.
图 5 厚度为105 nm的Ni88Cu12薄膜热处理前后磁谱
Figure 5. Permeability spectra of 105 nm-thick Ni88Cu12 film before and after heat treatment.
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[1] Lekas M, Davies R, Sturcken N 2018 IEEE Magn. Lett. 10 1
Google Scholar
[2] Greaves S, Kanai Y 2018 IEEE Trans. Magn. 55 1
Google Scholar
[3] Feng H, Zhu Z, Liu W, Li X, Xie H, Liu Q, Wang J 2019 J. Mater. Sci. 54 14189
Google Scholar
[4] Kittel C 1948 Phys. Rev. 73 155
Google Scholar
[5] Phuoc N N, Ong C K 2013 J. Phys. D: Appl. Phys. 46 485002
Google Scholar
[6] 李金财, 詹清峰, 潘民杰, 刘鲁萍, 杨华礼, 谢亚丽, 谢淑红, 李润伟 2016 65 217501
Google Scholar
Li J C, Zhan Q F, Pan M J, Liu L P, Yang H L, Xie Y L, Xie S H, Li R W 2016 Acta Phys. Sin. 65 217501
Google Scholar
[7] Ziberi B, Frost F, Höche T, Rauschenbach B 2005 Phys. Rev. B 72 235310
Google Scholar
[8] Zhou C, You M, Ding L, Feng C, Xu M, Wang S 2019 Appl. Phys. A 125 174
Google Scholar
[9] Spain R 1965 Appl. Phys. Lett. 6 8
Google Scholar
[10] Cao D, Wang Z, Feng E, Wei J, Wang J, Liu Q 2013 J. Alloys Compd. 581 66
Google Scholar
[11] Wei J, Zhu Z, Feng H, Du J, Liu Q, Wang J 2015 J. Phys. D: Appl. Phys. 48 465001
Google Scholar
[12] Prosen R J, Holmen J O, Gran B E 1961 J. Appl. Phys. 32 S91
Google Scholar
[13] Iwata T, Prosen R J, Gran B E 1966 J. Appl. Phys. 37 1285
Google Scholar
[14] Amos N, Fernandez R, Ikkawi R, Lee E, Lavrenov A, Litvinov l K D, Khizroev S 2008 J. Appl. Phys. 103 07E732
Google Scholar
[15] Ben Youssef J, Vukadinovic N, Billet D, Labrune M 2004 Phys. Rev. B 69 174402
Google Scholar
[16] Brandenburg J, Hühne R, Schultz L, Neu V 2009 Phys. Rev. B 79 054429
Google Scholar
[17] Vladyslav A, Vas’ko, Rantschler J O, Kief M T 2004 IEEE Trans. Magn. 40 2335
Google Scholar
[18] Zou P, Yu W, Bain J A 2002 J. Appl. Phys. 91 7830
Google Scholar
[19] Phuoc N N, Ong C K 2013 J. Appl. Phys. 114 023901
Google Scholar
[20] 王锐, 郑富, 罗飞龙, 娄元付, 王颖, 曹江伟, 白建民, 魏福林, 阿谢卡姆津 2013 62 217503
Google Scholar
Wang R, Zheng F, Luo F L, Lou Y F, Wang Y, Cao J W, Bai J M, Wei F L, Kamzin A S 2013 Acta Phys. Sin. 62 217503
Google Scholar
[21] Cao D, Pan L, Cheng X, Wang Z, Feng H, Zhu Z, Xu J, Li Q, Li S, Wang J, Liu Q 2018 J. Phys. D: Appl. Phys. 51 025001
Google Scholar
[22] Leva E S, Valente R C, Tabares F M, Mansilla M V 2010 Phys. Rev. B 82 144410
Google Scholar
[23] Tu Y O 1981 J. Appl. Phys. 52 3130
Google Scholar
[24] Debonte W J 1975 IEEE Trans. Magn. 11 3
Google Scholar
[25] 郑富, 陈治鹏, 马亚楠, 周俊 2017 磁性材料及器件 48 19701
Google Scholar
Zheng F, Chen Z P, Ma YN, Zhou J 2017 J. Magn. Mater. Devices 48 19701
Google Scholar
[26] Patterson A L 1939 Phys. Rev. 56 978
Google Scholar
[27] Soh W T, Phuoc N N, Tan C Y, Ong C K 2013 J. Appl. Phys. 114 053908
Google Scholar
[28] Sultan M, Singh R 2010 JPCS 200 072090
Google Scholar
[29] Shah L R, Fan X, Kou X, Wang W G, Zhang Y P, Lou J, Sun N X, Xiao J Q 2010 J. Appl. Phys. 107 09D909
Google Scholar
[30] Bhoi B, Venkataramani N, Aiyar R, Prasad S, Kostylev M 2018 IEEE Trans. Magn. 54 2801205
Google Scholar
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