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The electrical and dielectric properties and the microstructures of a polynary ZnO-based varistor ceramics with 14000 times impulse current aging test are measured. The relationship between defect structure and impulse current aging is mainly investigated. It is found that the electrical properties decrease rapidly with impulse aging and the dimensional effect of ZnO varistor ceramics is dominated not only by grain but also by grain boundary. Additionally, four defect relaxations are found at different temperatures by using dielectric spectra. Two defect relaxations appearing below -60 ℃ with activation energies about 0.24 eV and 0.35 eV are identified to be intrinsic defects originating from interstitial Zn L(Zni··) and vacancy oxygen L(VO·), which are not affected by impulse current aging. Other two relaxations appearing above 80 °C are suggested to be extrinsic defects originating from trap levels L(ingr) at intergranular phase and trap levels L(gb) at grain-boundary interfaces, respectively. Only L(gb) decreases from 0.84 eV to 0.76 eV due to impulse current aging while other trap levels keep unchanged. It is further proposed that L(gb) is responsible mainly for the electrical property and stability of ZnO ceramics.
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Keywords:
- ZnO varistor ceramics /
- defect structures /
- impulse degradation /
- varistor voltage
[1] Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132
[2] Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789
[3] Fayat J, Castro M S 2003 J. Eur. Ceram. Soc. 23 1585
[4] Cordaro J F, Shim Y, May J E 1986 J. Appl. Phys. 60 4186
[5] Chiou B S, Chung M C 1991 J. Electron. Mat. 20 885
[6] Greuter F, Blatter G 1990 Semicond. Sci. Technol. 5 111
[7] Levinson L M, Philipp H R 1976 J. Appl. Phys. 47 1117
[8] Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 58 5721]
[9] Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902
[10] Rohatgi A, Pang S K, Gupta T K, Straub W D 1988 J. Appl. Phys. 63 5375
[11] Lee W I, Young R L 1996 Appl. Phys. Lett. 69 526
[12] Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25 (in Chinese) [李慧峰, 王士良, 许毓春 1993 中国电机工程学报(增刊) 3 25]
[13] Li S T, Li J Y, Alim M A 2003 J. Electroceram 11 119
[14] Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 59 6345]
[15] Chen J D, Liu Z Y, 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]
[16] Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676
[17] Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160
[18] Hong Y W, Kim J H 2004 Ceram. Int. 30 1307
[19] Andres-Verges M, West A R 1997 J. Electroceram. 1 125
[20] Tao M, Ai B, Dorlanne O, Loubiere A 1986 J. Appl. Phys. 61 1562
[21] Leach C, Vernon-Parry K D, Ali N K 2010 J. Elctroceram. 25 188
[22] Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛 2009 58 4219]
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[1] Gupta T K, Straub W D 1989 J. Appl. Phys. 66 6132
[2] Xu D, Shi L Y, Wu Z H, Zhong Q D, Wu X X 2009 J. Eur. Ceram. Soc. 29 1789
[3] Fayat J, Castro M S 2003 J. Eur. Ceram. Soc. 23 1585
[4] Cordaro J F, Shim Y, May J E 1986 J. Appl. Phys. 60 4186
[5] Chiou B S, Chung M C 1991 J. Electron. Mat. 20 885
[6] Greuter F, Blatter G 1990 Semicond. Sci. Technol. 5 111
[7] Levinson L M, Philipp H R 1976 J. Appl. Phys. 47 1117
[8] Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 58 5721]
[9] Cheng P, Li S, Zhang L, Li J 2008 Appl. Phys. Lett. 93 012902
[10] Rohatgi A, Pang S K, Gupta T K, Straub W D 1988 J. Appl. Phys. 63 5375
[11] Lee W I, Young R L 1996 Appl. Phys. Lett. 69 526
[12] Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25 (in Chinese) [李慧峰, 王士良, 许毓春 1993 中国电机工程学报(增刊) 3 25]
[13] Li S T, Li J Y, Alim M A 2003 J. Electroceram 11 119
[14] Yin G L, Li J Y, Yao G, Cheng P F, Li S T 2010 Acta Phys. Sin. 59 6345 (in Chinese) [尹桂来, 李建英, 尧广, 成鹏飞, 李盛涛 2010 59 6345]
[15] Chen J D, Liu Z Y, 1982 Dielectric Physics (Beijing: Mechanical Industry Press) p151 (in Chinese) [陈季丹, 刘子玉 1982 电介质物理学 (北京: 机械工业出版社) 第151页]
[16] Tripathi R, Kumar A, Bharti C, Sinha T P 2010 Curr. Appl. Phys. 10 676
[17] Roling B, Happe A, Funke K, Ingram M D 1997 Phys. Rev. Lett. 78 2160
[18] Hong Y W, Kim J H 2004 Ceram. Int. 30 1307
[19] Andres-Verges M, West A R 1997 J. Electroceram. 1 125
[20] Tao M, Ai B, Dorlanne O, Loubiere A 1986 J. Appl. Phys. 61 1562
[21] Leach C, Vernon-Parry K D, Ali N K 2010 J. Elctroceram. 25 188
[22] Yin G L, Li J Y, Li S T 2009 Acta Phys. Sin. 58 4219 (in Chinese) [尹桂来, 李建英, 李盛涛 2009 58 4219]
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