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The electrical and dielectric properties of a commercial ZnO-based varistor ceramics were measured in the process of 8/20 μs impulse current degradation up to 5000 times of impulses. The characteristics of U-I in the region of low current and the loss tangent were mainly investigated. It was found that the varistor voltage U1mA will first increase rapidly with impulse times increasing, and then remain stable and finally decrease sharply. Furthermore, a new loss peak emerges at -100℃ in the dielectric spectra after 600 times of impulse degradation, which suggests a new trapping behavior introduced in the degradation process. Activation energy of the new peak first decreases, then becomes independent on impulse times. It was also found that the non-linear coefficient was more sensitive to the degradation process than varistor voltage U1mA. These phenomena have not been reported before, which revealed that the variation of the neutral Fermi level between positive bias Schottky barrier region and reverse bias Schottky barrier region is the origin which leads to the degradation of electrical properties.
[1] Mcldenheauer W, Bather K H 1981 Phys.Status.Solidi A 67 533
[2] Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25(in Chinese)[李慧峰、王士良、许毓春 1993 中国电机工程学报(增刊) 3 25]
[3] Zhang M R 1991 Ph.D.Thesis(Xi’an Jiaotong University) (in Chinese)[张美容 1991 博士论文(西安交通大学)]
[4] Zhang M R, Liu F Y, Liu Z Y 1991 Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials July 8-12 Tokyo, Japan
[5] Eda K, Iga A, Matsuoka M 1979 Jpn.J.Appl.Phys 18 997
[6] Gupta T K, Carlson W G, Hower P L 1981 J.Appl.Phys. 52 4104
[7] Cheng P F 2007 Ph.D.Thesis(Xi’an Jiaotong University)(in Chinese) [成鹏飞 2007 博士论文(西安交通大学)]
[8] Locker D R , Meese J M 1972 IEEE Trans. Nucl. Sci. 19 237
[9] Jensen G H 1974 Phys. Stat. Sol. B 64 K51
[10] Li S T, Yang Y, Zhang L, Cheng P F 2009 Acta Phys. Sin. 58 2543(in Chinese)[李盛涛、杨 雁、张 乐、成鹏飞 2009 58 2547]
[11] Cheng P F, Li S T, Jiao X L 2006 Acta Phys. Sin. 55 4253(in Chinese)[成鹏飞、李盛涛、焦兴六 2006 55 4253]
[12] Cheng P F, Li S T, Alim M A 2007 Phys. Stat. Sol. A 204 887
[13] Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902
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[1] Mcldenheauer W, Bather K H 1981 Phys.Status.Solidi A 67 533
[2] Li F F, Wang S L, Xu Y C 1993 Proceedings of the CSEE 3 25(in Chinese)[李慧峰、王士良、许毓春 1993 中国电机工程学报(增刊) 3 25]
[3] Zhang M R 1991 Ph.D.Thesis(Xi’an Jiaotong University) (in Chinese)[张美容 1991 博士论文(西安交通大学)]
[4] Zhang M R, Liu F Y, Liu Z Y 1991 Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials July 8-12 Tokyo, Japan
[5] Eda K, Iga A, Matsuoka M 1979 Jpn.J.Appl.Phys 18 997
[6] Gupta T K, Carlson W G, Hower P L 1981 J.Appl.Phys. 52 4104
[7] Cheng P F 2007 Ph.D.Thesis(Xi’an Jiaotong University)(in Chinese) [成鹏飞 2007 博士论文(西安交通大学)]
[8] Locker D R , Meese J M 1972 IEEE Trans. Nucl. Sci. 19 237
[9] Jensen G H 1974 Phys. Stat. Sol. B 64 K51
[10] Li S T, Yang Y, Zhang L, Cheng P F 2009 Acta Phys. Sin. 58 2543(in Chinese)[李盛涛、杨 雁、张 乐、成鹏飞 2009 58 2547]
[11] Cheng P F, Li S T, Jiao X L 2006 Acta Phys. Sin. 55 4253(in Chinese)[成鹏飞、李盛涛、焦兴六 2006 55 4253]
[12] Cheng P F, Li S T, Alim M A 2007 Phys. Stat. Sol. A 204 887
[13] Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902
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