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The drift-diffusion theory is adopted to simulate the bandwidth and the saturation characteristics of InGaAs/InP uni-traveling-carrier (UTC) photodetector. According to the experiment results, we analyze the physical mechanisms in high speed and high power UTC photodetector. It is shown that introducing the cliff layer and the gradually doped absorption layer can enhance the saturation characteristic obviously. Electric field collapse in the absorption layer leads to the saturation, and RC constant is still a limitation factor for device with diameter larger than 20 μm. In this paper we point out the effective methods to improve device performance.
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Keywords:
- uni-traveling-carrier photodetector (UTC PD) /
- space charge effect /
- high speed /
- high power
[1] Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Proc. OSA TOPS on Ultrafast Electronics and Optoelectronics 13 83
[2] Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron Device Lett. 3 18
[3] Hill P, Schlafer J, Powazinik W, Ueban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 50 1260
[4] Ito H, Kodama S, Ishibashi T 2000 Electron. Lett. 36 1809
[5] Li N, Li X W, Demiguel S, Zheng X G, Campbell J C, Tulchinsky D A, Williams K J, Isshiki T D, Kinsey G S, Sudharsansan R 2004 IEEE Photon. Technol. Lett. 16 864
[6] Li X W, Li N, Demiguel S, Zheng X G, Campbell J C, Tan H H, Jagadish C 2004 IEEE Photon. Technol. Lett. 16 2326
[7] Zhu H B, Mao L H, Yang Z, Guo W L, Zhang S L, Liang H L 2006 Chinese Journal of Semiconductors 27 2019 (in Chinese) [朱浩波, 毛陆虹, 杨展, 郭维廉, 张世林, 梁惠来 2006 半导体学报 27 2019]
[8] Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭剑川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 59 4524]
[9] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Chen B W, Yu J Z, Wang Q M 2010 7th IEEE International Conference on Group IV Photonics, Beijing, China, 272
[10] Zhang L Z, Cao Q, Zuo Y H, Xue C L, Chen B W, Wang Q M 2011 IEEE Photon. Technol. Lett. 23 881
[11] Adachi S 1992 Physical Properties of III-V semiconductor compounds-InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (New York: John Wiley & Sons, Inc.) pp75-99, pp223-262
[12] Wada O, Hasegawa H 1999 InP-Based Materials and Devices-Physics and Technology (New York: John Wiley & Sons, Inc.) pp85-86
[13] Williams K J, Esman R D 1999 J. Lightwave Technol. 17 1443
[14] Shimizu N, Watanabe N, Furuta T, Ishibashi T 1998 IEEE Photon. Technol. Lett. 10 412
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[1] Ishibashi T, Shimizu N, Kodama S, Ito H, Nagatsuma T, Furuta T 1997 Proc. OSA TOPS on Ultrafast Electronics and Optoelectronics 13 83
[2] Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron Device Lett. 3 18
[3] Hill P, Schlafer J, Powazinik W, Ueban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 50 1260
[4] Ito H, Kodama S, Ishibashi T 2000 Electron. Lett. 36 1809
[5] Li N, Li X W, Demiguel S, Zheng X G, Campbell J C, Tulchinsky D A, Williams K J, Isshiki T D, Kinsey G S, Sudharsansan R 2004 IEEE Photon. Technol. Lett. 16 864
[6] Li X W, Li N, Demiguel S, Zheng X G, Campbell J C, Tan H H, Jagadish C 2004 IEEE Photon. Technol. Lett. 16 2326
[7] Zhu H B, Mao L H, Yang Z, Guo W L, Zhang S L, Liang H L 2006 Chinese Journal of Semiconductors 27 2019 (in Chinese) [朱浩波, 毛陆虹, 杨展, 郭维廉, 张世林, 梁惠来 2006 半导体学报 27 2019]
[8] Guo J C, Zuo Y H, Zhang Y, Zhang L Z, Cheng B W, Wang Q M 2010 Acta Phys. Sin. 59 4524 (in Chinese) [郭剑川, 左玉华, 张云, 张岭梓, 成步文, 王启明 2010 59 4524]
[9] Zhang L Z, Zuo Y H, Cao Q, Xue C L, Chen B W, Yu J Z, Wang Q M 2010 7th IEEE International Conference on Group IV Photonics, Beijing, China, 272
[10] Zhang L Z, Cao Q, Zuo Y H, Xue C L, Chen B W, Wang Q M 2011 IEEE Photon. Technol. Lett. 23 881
[11] Adachi S 1992 Physical Properties of III-V semiconductor compounds-InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (New York: John Wiley & Sons, Inc.) pp75-99, pp223-262
[12] Wada O, Hasegawa H 1999 InP-Based Materials and Devices-Physics and Technology (New York: John Wiley & Sons, Inc.) pp85-86
[13] Williams K J, Esman R D 1999 J. Lightwave Technol. 17 1443
[14] Shimizu N, Watanabe N, Furuta T, Ishibashi T 1998 IEEE Photon. Technol. Lett. 10 412
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