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The effects of heterogeneous interfaces on the microstructure, the morphology and the dielectric properties of Ca(Mg1/3Nb2/3)O3/CaTiO3(CMN/CT) multilayered(ML) thin film prepared in the layer-by-layer mode with a certain thickness are investigated. According to the experimental results, an equivalent circuit of CMN/CT ML thin film is simulated, and the theoretical formulae of the dielectric constant and loss of thin film are established. The results indicate that CMN/CT ML thin film, in which CT and CMN phases can exist independently, possesses a pure orthorhombic perovskite structure, dense smooth surfaces and intermediate layers at the heterogeneous interfaces, and that the dielectric constant increases and the dielectric loss decreases with the increase in the number of heterogeneous interfaces, and reducing the thickness of the interfacial transition layer is useful to improve the dielectric properties of CMN/CT multilayered thin film.
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Keywords:
- heterogeneous interface /
- CMN/CT multilayered thin films /
- dielectric properties /
- equivalent circuit
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[16] Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735
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[19] [20] [21] Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547
[22] Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168
[23] [24] Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27
[25] [26] Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025
[27] [28] [29] Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]
[30] [31] Stengel M, Spaldin N A 2006 Nature 443 679
[32] Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122
[33] [34] Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588
[35] -
[1] Kanno I, Hayashi S, Takayama R, Hirao T 1996 Appl. Phys. Lett. 68 328
[2] [3] Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111-1
[4] Qu B D, Evstigneev M, Johnson D J, Prince R H 1998 Appl. Phys. Lett. 72 1394
[5] [6] ONeill D, Bowman R M, Gregg J M 2000 Appl. Phys. Lett. 77 1520
[7] [8] Schmidt R, Eerenstein W, Winiecki T, Morrison F D, Midgley P A 2007 Phys. Rev. B 75 245111-1
[9] [10] Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3069 (in Chinese) [郑分刚, 陈建平, 李新婉 2006 55 3069]
[11] [12] Erbil A, Kim Y, Gerhardt R A 1996 Phys. Rev. Lett. 77 1629
[13] [14] [15] Tabata H, Tanka H, Kawai T 1994 Appl. Phys. Lett. 65 1971
[16] Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735
[17] [18] Shen J, Zhou J, Lei Q, Ou G, Chen W 2010 J. Chin. Ceram. Soc. 38 10 (in Chinese) [沈杰, 周静, 雷琼, 欧刚, 陈文 2010 硅酸盐学报 38 10]
[19] [20] [21] Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547
[22] Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168
[23] [24] Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27
[25] [26] Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025
[27] [28] [29] Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]
[30] [31] Stengel M, Spaldin N A 2006 Nature 443 679
[32] Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122
[33] [34] Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588
[35]
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