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利用波段内连续激光, 辐照禁带宽度为0.33 eV的中波光伏碲镉汞探测器. 实验结果表明, 随着辐照激光光强的逐渐增大, 探测器从线性响应过渡为非线性响应. 当探测器进入非线性状态, 探测器的开路电压随激光光强的增大而减小, 且在激光开启辐照时开路电压信号迅速下跳, 在激光停止辐照时开路电压信号迅速上跳. 通过考虑激光辐照下探测器的温度场分布以及温度对p-n结内建电场的影响, 结合考虑机械快门在开启和关闭时对激光光强变化的影响, 建立了光伏探测器在波段内连续激光辐照下的解析模型, 模型计算结果与实验结果吻合得较好. 研究表明, 激光辐照过程中的非线性响应, 主要由温度对p-n结内建电场的影响决定, 激光开启和关闭时的开路电压的幅值是由光强和温度共同决定.The medium wave HgCdTe photovoltaic detector (band gap ~0.33 eV) is irradiated by a CW band-in laser. The experimental results are shown that the detector enter into nonlinear response state as the incidence laser power increase. When the detector entered into nonlinear response state, the open circle voltage (Voc) signal decreased with the laser power. The Voc signal rapidly decreased when the laser turned on and the Voc signal rapidly increased when the laser turned off. The effect of laser induced temperature field and temperature dependence built-in field of pn junction were considered. The laser power variation of laser turn on and turn off were aslo considered. The analytical model of photovoltaic detector irradiated by above-band gap CW laser was built up. The calculation results agree well with the experiment results. It is shown that the temperature dependence built-in field of pn junction is the main mechanism induced the nonlinear response. The magnitude of Voc signals with laser turn on and turn off is decided by light intensity and temperature.
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Keywords:
- CW band-in laser /
- photovoltaic detector /
- nonlinear response /
- the over-saturation phenomenon
[1] Zhang Z, Cheng X A, Wang R, Jiang T, Qiu D D, Jiang Z F 2011 Optics and Lasers in Engineering 49 292
[2] Sun K, Huang L J, Cheng X A, Jiang H M 2011 Opt. Express 19 23901
[3] Kuanr A V, Bansal S K, Srivatava G P 1996 Opt. and Laser Technol. 28 345
[4] Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5] Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6] Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7] Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta Phys. Sin. 60 107305 (in Chinese) [江 天, 程湘爱, 江厚满, 陆启生 2011 60 107305]
[8] Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
[9] Li X Q, Cheng X A, Wang R, 2003 Chinese Journal of Lasers 30 1070 (in Chinese) [李修乾, 程湘爱, 王 睿 2003 中国激光 28 1070]
[10] Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王 睿 2003 强激光与粒子束 15 40]
[11] Zhu L, Yang W G, Xu L L, Chen D A, Wang W, Cui Y P 2007 Acta Phys. Sin. 56 569 (in Chinese) [朱 利, 杨文革, 徐玲玲, 徐安定, 王 文, 崔一平 2007 56 569]
[12] Wang R, Si L, Lu Q S 2003 Laser & Infrared. 33 335 (in Chinese) [王 睿, 司 磊, 陆启生 2003 激光与红外 33 335]
[13] Ma L Q, Lu Q S, Du S J 2004 Chinese Journal of Lasers 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[14] Ma L Q, Lu Q S, 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[15] Li L, Lu Q S, Jiang H M, Cheng X A 2007 Acta Opt. Sin. 27 85 (in Chinese) [李 莉, 陆启生, 江厚满, 程湘爱 2007 光学学报 27 85]
[16] Li L, Lu Q S 2008 Acta Opt. Sin. 28 1953 (in Chinese) [李 莉, 陆启生 2008 光学学报 28 1953]
[17] He Y X, Jiang H M 2008 High Power Laser and Particle Beams 20 1233 (in Chinese) [贺元兴, 江厚满 2008 强激光与粒子束 20 1233]
[18] He Y X, Jiang H M 2010 High Power Laser and Particle Beams 22 2829 (in Chinese) [贺元兴, 江厚满 2010 强激光与粒子束 22 2829]
[19] Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of Laser Irradiation (Beijing: Publishing House of National Defence Industry) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[20] Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
[21] Liu E K, Zhu B S, Luo J S 2009 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p245 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第245页]
[22] Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Scientific Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]
[23] Chu J H 2005 Narrow-bandgap Semiconductor Physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社)第369页]
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[1] Zhang Z, Cheng X A, Wang R, Jiang T, Qiu D D, Jiang Z F 2011 Optics and Lasers in Engineering 49 292
[2] Sun K, Huang L J, Cheng X A, Jiang H M 2011 Opt. Express 19 23901
[3] Kuanr A V, Bansal S K, Srivatava G P 1996 Opt. and Laser Technol. 28 345
[4] Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5] Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6] Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7] Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta Phys. Sin. 60 107305 (in Chinese) [江 天, 程湘爱, 江厚满, 陆启生 2011 60 107305]
[8] Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
[9] Li X Q, Cheng X A, Wang R, 2003 Chinese Journal of Lasers 30 1070 (in Chinese) [李修乾, 程湘爱, 王 睿 2003 中国激光 28 1070]
[10] Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王 睿 2003 强激光与粒子束 15 40]
[11] Zhu L, Yang W G, Xu L L, Chen D A, Wang W, Cui Y P 2007 Acta Phys. Sin. 56 569 (in Chinese) [朱 利, 杨文革, 徐玲玲, 徐安定, 王 文, 崔一平 2007 56 569]
[12] Wang R, Si L, Lu Q S 2003 Laser & Infrared. 33 335 (in Chinese) [王 睿, 司 磊, 陆启生 2003 激光与红外 33 335]
[13] Ma L Q, Lu Q S, Du S J 2004 Chinese Journal of Lasers 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[14] Ma L Q, Lu Q S, 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[15] Li L, Lu Q S, Jiang H M, Cheng X A 2007 Acta Opt. Sin. 27 85 (in Chinese) [李 莉, 陆启生, 江厚满, 程湘爱 2007 光学学报 27 85]
[16] Li L, Lu Q S 2008 Acta Opt. Sin. 28 1953 (in Chinese) [李 莉, 陆启生 2008 光学学报 28 1953]
[17] He Y X, Jiang H M 2008 High Power Laser and Particle Beams 20 1233 (in Chinese) [贺元兴, 江厚满 2008 强激光与粒子束 20 1233]
[18] He Y X, Jiang H M 2010 High Power Laser and Particle Beams 22 2829 (in Chinese) [贺元兴, 江厚满 2010 强激光与粒子束 22 2829]
[19] Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of Laser Irradiation (Beijing: Publishing House of National Defence Industry) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[20] Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
[21] Liu E K, Zhu B S, Luo J S 2009 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p245 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第245页]
[22] Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Scientific Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]
[23] Chu J H 2005 Narrow-bandgap Semiconductor Physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社)第369页]
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