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The change of base resistance in Si-UJT under irradiation of 60Co γ-ray is provided. Through multipoint measurement and real-time monitoring, it was shown that the base resistance decreased immediately and then increased slowly. Compared with domestic and foreign related research results, this proves that the displacement effect is the main effect of base resistance in Si-UJT irradiated by 60Co γ-ray, but it lags behind the ionization effect from microanalysis of the interaction between γ-ray and Si material. This is very important for the radiation hardened research.
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Keywords:
- unijunction transistor /
- 60Co γ-ray /
- real-time monitoring /
- base resistance
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[7] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, YaoY J 2001 Acta Phys. Sin. 50 2434(in Chinese)[张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001 50 2434]
[8] Cheng P X 2005 Radiation Effect on Semiconductor Device and Integrated Circuits(Beijing: National Defense Indestry Press)p25(in Chinese)[陈盘训 2005 半导体器件和集成电路的辐射效应(北京:国防工业出版社)第25页]
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[13] Dezillie B,Li Z,Eremin V,Chen W, Zhao L J 2000 IEEE Trans. Nucl. Sci. 47 800
[14] Zhang Y Y,Liu F,Pei Z J,Ji X F 1998 98 National Semiconductor Silicon Material Academic Conference,Shanghai,September,1998 p53 (Shanhai: Shanhai Academy of Nonferrous Metal, Chinese Academy of Nonferrous Metal(in Chinese)[张忆延、刘 锋、裴志军、纪秀峰 98全国半导体硅材料学术会议论文集,上海,1998年9月 第53页(上海:上海有色金属协会,中国有色金属协会)]
[15] Chen G F, Yan W B, Chen H J, Cui H Y, Li Y X 2009 Chin. Phys. B 18 2988
[16] Chen G F, Yan W B, Chen H J, Li X H, Li YX 2009 Chin. Phys. B 18 293
[17] Xu J,Li F L,Yang D R 2007 Acta Phys. Sin. 56 4113(in Chinese) [徐 进、李福龙、杨德仁 2007 56 4113]
[18] Watkins G D 2000 Mat. Sci. Semicond. Proc. 3 227
[19] Passeri D, Ciampolini P, Bilei G M, Moscatelli F 2001 IEEE Trans. Nucl. Sci. 47 1688
[20] Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653
[21] Qiao Y H,Wang S Q 2005 Acta Phys. Sin. 54 4827(in Chinese) [乔永红、王绍青 2005 54 4827]
[22] Flescher H L, Szymkowiak E A 1966 NASA CR-526 66 31669
[23] Li Y X, Liu H Y, Niu P J, Liu C C, Xu Y S, Yang D R, Que D L 2002 Acta Phys. Sin. 51 2407(in Chinese) [李养贤、刘何燕、牛萍娟、刘彩池、徐岳生、杨德仁、阙端麟 2002 51 2407]
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[1] Horn W E (translated by Wei G) 1974 Radiation Effect on Electronic Device(Beijing:National Defense Indestry Press)pp43—44(in Chinese)
[2] Zhang J R, Shi J X, Tong L Y 2005 Semicond. Technol. 30 67(in Chinese)[张继荣、史继祥、佟丽英 2005半导体技术 30 67]
[3] Claeys C, Simoen E (translated by Liu Z L) 2008 Radiation Effect on Advanced Semiconductor Material and Device (Beijing: National Defense Industry Press)pp22—82(in Chinese)
[4] Liu F, Ji X F, Tong L Y 2001 Semicond. Info. 38 45(in Chinese)[刘 锋、纪秀峰、佟丽英 2001 半导体情报 38 45]
[5] Wang J R,Gao Z L 1996 J. Nucl. Agric. Sci. 17 75(in Chinese)[王锦荣、高仲林 1996核农学通报 17 75]
[6] Zai D Q 1992 J. Radiat Res. Processing 10 126(in Chinese)[翟冬青 1992 辐射研究和辐射工艺学报 10 126]
[7] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, YaoY J 2001 Acta Phys. Sin. 50 2434(in Chinese)[张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001 50 2434]
[8] Cheng P X 2005 Radiation Effect on Semiconductor Device and Integrated Circuits(Beijing: National Defense Indestry Press)p25(in Chinese)[陈盘训 2005 半导体器件和集成电路的辐射效应(北京:国防工业出版社)第25页]
[9] He B P, Chen W, Wang G Z 2006 Acta Phys. Sin. 55 3546(in Chinese) [何宝平、陈 伟、王桂珍 2005 55 3546]
[10] Jing T 2000 Chin. Nucl. Sci. Technol. Rep. 01514 0064(in Chinese)[景 涛 2000中国核科技报告01514 0064]
[11] Matsuura H, Uchida Y, Nagai N, Hisamatsu T, Aburaya T, Matsuda S 2000 Appl. Phys.Lett. 76 2092
[12] Lai Z W 1998 Radiation Hardened Electronics—Radiation Effect and Strengthening Principle (Beijing: National Defense Industry Press)pp10—12(in Chinese)[赖祖武 1998 抗辐射电子学——辐射效应及加固原理(北京:国防工业出版杜)第10—12页]
[13] Dezillie B,Li Z,Eremin V,Chen W, Zhao L J 2000 IEEE Trans. Nucl. Sci. 47 800
[14] Zhang Y Y,Liu F,Pei Z J,Ji X F 1998 98 National Semiconductor Silicon Material Academic Conference,Shanghai,September,1998 p53 (Shanhai: Shanhai Academy of Nonferrous Metal, Chinese Academy of Nonferrous Metal(in Chinese)[张忆延、刘 锋、裴志军、纪秀峰 98全国半导体硅材料学术会议论文集,上海,1998年9月 第53页(上海:上海有色金属协会,中国有色金属协会)]
[15] Chen G F, Yan W B, Chen H J, Cui H Y, Li Y X 2009 Chin. Phys. B 18 2988
[16] Chen G F, Yan W B, Chen H J, Li X H, Li YX 2009 Chin. Phys. B 18 293
[17] Xu J,Li F L,Yang D R 2007 Acta Phys. Sin. 56 4113(in Chinese) [徐 进、李福龙、杨德仁 2007 56 4113]
[18] Watkins G D 2000 Mat. Sci. Semicond. Proc. 3 227
[19] Passeri D, Ciampolini P, Bilei G M, Moscatelli F 2001 IEEE Trans. Nucl. Sci. 47 1688
[20] Srour J R, Marshall C J, Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653
[21] Qiao Y H,Wang S Q 2005 Acta Phys. Sin. 54 4827(in Chinese) [乔永红、王绍青 2005 54 4827]
[22] Flescher H L, Szymkowiak E A 1966 NASA CR-526 66 31669
[23] Li Y X, Liu H Y, Niu P J, Liu C C, Xu Y S, Yang D R, Que D L 2002 Acta Phys. Sin. 51 2407(in Chinese) [李养贤、刘何燕、牛萍娟、刘彩池、徐岳生、杨德仁、阙端麟 2002 51 2407]
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