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Porous silicon (PS) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. It is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. These two types of defects change the lifetime and the S parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (PL) efficiency. Defects that cause the PL of PS show no obvious change after annealing at 300 ℃ in vacuum, therefore the PL of the sample is not influenced.
[1] Canham L T 1990 Appl. Phys. Lett. 57 1046
[2] Rahmani M, Moadhen A, Zahi M A, Elhouichet H, Oueslati M 2008 J. Lumin. 128 1763
[3] Gelloz B, Koshida N 2006 Thin Solid Films 508 406
[4] Gelloz B, Kojima A, Koshida N 2005 Appl. Phys. Lett. 87 031107
[5] Qin G G, Li Y J 2003 Phys. Rev. B 68 085309
[6] Huang W Q, Wang X Y, Zhang R T, Yu S Q, Qin C J 2009 Acta Phys. Sin. 58 4652 (in Chinese)[黄伟奇、 王晓允、 张荣涛、 于示强、 秦朝建 2009 58 4652]
[7] Puzder A, Williamson A J, Grossman J C, Galli G 2002 Phys. Rev. Lett. 88 097401
[8] Hadjisavvas G, Kelires P C 2004 Phys. Rev. Lett. 93 226104
[9] Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O I, Van Tendeloo G, Moshchalkov V V 2008 Nanotechnology 3 174
[10] Pradeep J A, Agarwal P 2008 J. Appl. Phys. 104 123515
[11] Lambrecht M, Almazouzi A 2009 J. Nucl. Mater. 385 334
[12] Wang Z C, Teng M K, Liu Y C 1991 Acta Phys. Sin. 40 1973 (in Chinese)[王志超、 藤敏康、 刘吟春 1991 40 1973]
[13] Cassidy D B, Mills A P Jr 2008 Phys. Rev. Lett. 100 013401
[14] Cassidy D B, Yokoyama K T, Deng S H M, Griscom D L, Miyadera H, Tom H W K, Varma C M, Mills A P Jr 2007 Phys. Rev. B 75 085415
[15] Zhang T B, Xu M 1990 High Ener. Phys. Nucl. Phys. 14 289 (in Chinese)[张天保、 徐 敏 1990 高能物理与核物理 14 289]
[16] Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[17] Gelloz B, Shibata T, Koshida N 2006 Appl. Phys. Lett. 89 191103
[18] Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[19] Itoh Y, Murakami H, Kinoshita A 1994 Hyper. Inter. 84 121
[20] Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Hubei Science and Technology Press) p131(in Chinese) [王少阶、 陈志权、 王 波、 吴亦初、 方鹏飞、 张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第131页]
[21] Stesmans A, Afanas’ev V V 1998 J. Appl. Phys. 83 2449
[22] Stesmans A, Nouwen B, Afanas’ev V V 1998 Phys. Rev. B 58 15801
[23] Delerue C, Allan G, Lannoo M 1993 Phys. Rev. B 48 10024
[24] Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[25] Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[26] Stesmans A, Scheerlinck F 1994 Phys. Rev. B 50 5204
[27] Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T 1994 Phys. Rev. B 49 17484
[28] Gupta P, Colvin V L, George S M 1988 Phys. Rev. B 37 8234
[29] Robinson M B, Dillon A C, Haynes D R, George S M 1992 Appl. Phys. Lett. 61 1414
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[1] Canham L T 1990 Appl. Phys. Lett. 57 1046
[2] Rahmani M, Moadhen A, Zahi M A, Elhouichet H, Oueslati M 2008 J. Lumin. 128 1763
[3] Gelloz B, Koshida N 2006 Thin Solid Films 508 406
[4] Gelloz B, Kojima A, Koshida N 2005 Appl. Phys. Lett. 87 031107
[5] Qin G G, Li Y J 2003 Phys. Rev. B 68 085309
[6] Huang W Q, Wang X Y, Zhang R T, Yu S Q, Qin C J 2009 Acta Phys. Sin. 58 4652 (in Chinese)[黄伟奇、 王晓允、 张荣涛、 于示强、 秦朝建 2009 58 4652]
[7] Puzder A, Williamson A J, Grossman J C, Galli G 2002 Phys. Rev. Lett. 88 097401
[8] Hadjisavvas G, Kelires P C 2004 Phys. Rev. Lett. 93 226104
[9] Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O I, Van Tendeloo G, Moshchalkov V V 2008 Nanotechnology 3 174
[10] Pradeep J A, Agarwal P 2008 J. Appl. Phys. 104 123515
[11] Lambrecht M, Almazouzi A 2009 J. Nucl. Mater. 385 334
[12] Wang Z C, Teng M K, Liu Y C 1991 Acta Phys. Sin. 40 1973 (in Chinese)[王志超、 藤敏康、 刘吟春 1991 40 1973]
[13] Cassidy D B, Mills A P Jr 2008 Phys. Rev. Lett. 100 013401
[14] Cassidy D B, Yokoyama K T, Deng S H M, Griscom D L, Miyadera H, Tom H W K, Varma C M, Mills A P Jr 2007 Phys. Rev. B 75 085415
[15] Zhang T B, Xu M 1990 High Ener. Phys. Nucl. Phys. 14 289 (in Chinese)[张天保、 徐 敏 1990 高能物理与核物理 14 289]
[16] Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[17] Gelloz B, Shibata T, Koshida N 2006 Appl. Phys. Lett. 89 191103
[18] Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[19] Itoh Y, Murakami H, Kinoshita A 1994 Hyper. Inter. 84 121
[20] Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Hubei Science and Technology Press) p131(in Chinese) [王少阶、 陈志权、 王 波、 吴亦初、 方鹏飞、 张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第131页]
[21] Stesmans A, Afanas’ev V V 1998 J. Appl. Phys. 83 2449
[22] Stesmans A, Nouwen B, Afanas’ev V V 1998 Phys. Rev. B 58 15801
[23] Delerue C, Allan G, Lannoo M 1993 Phys. Rev. B 48 10024
[24] Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[25] Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[26] Stesmans A, Scheerlinck F 1994 Phys. Rev. B 50 5204
[27] Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T 1994 Phys. Rev. B 49 17484
[28] Gupta P, Colvin V L, George S M 1988 Phys. Rev. B 37 8234
[29] Robinson M B, Dillon A C, Haynes D R, George S M 1992 Appl. Phys. Lett. 61 1414
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