-
The bilayered magnetoelectric composite model has been analyzed. The non-homogeneous partial differential equation of the magnetoelectric material interacting with the microwave has been obtained in the condition that the partial derivative of the microwave is non-zero along the transmitting direction when the size of the magnetoelectric material is comparable with the wavelength. The analytic solution is solved for the equation at resonant condition, and then the analytic expressions of the magnetoelectric coefficient and the equivalent electric parameters are calculated. The results show that there is a correlative coupling term in excess in the magnetoelectric coefficient,the magnitude of which is related not only to the material parameters, but also to the microwave’s velocity in the material, and the equivalent admittance is related to the microwave’s frequency.
[1] Ramesh R, Spaldin N A 2007 Nature Materials 6 21
[2] Nan C W, Bichurin M I, Dong S X, Viehland A D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[3] Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 1056
[4] Ma J, Shi Z, Lin Y H, Nan C W 2009 Acta Phys. Sin. 58 5852(in Chinese) [马 静、施 展、 林元华、南策文 2009 58 5852]
[5] Yang F, Wen Y M, Li P, Bian L X 2007 Acta Phys. Sin. 56 3537(in Chinese)[杨 帆、文玉梅、李 平、卞雷祥 2007 56 3537]
[6] Bichurin M I, Petrov V M, Ryabkov O V, Averkin S V, Srinivasan G 2005 Phys. Rev. B 72 060408
[7] Bichurin M, Viehland D, Srinivasan G 2007 J. Electro. Ceramics 19 243
[8] Harshe G, Dougherty J P, Newnham R E 1993 Proc. SPIE 1919 224
[9] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 50 1253
[10] Feigel A 2004 Phys. Rev. Lett. 92 20404
[11] Obukhov Y N, Hehl F W 2007 arXiv v1 0708 11538
[12] van Tiggelen B A, Rikken G L J A 2004 Phys. Rev. Lett. 93 268903
[13] Birkeland O J, Brevik I 2007 Phys. Rev. E 76 66605
[14] Schutzhold R, Plunien G 2004 Phys. Rev. Lett. 93 268901
[15] Feigel A 2004 Phys. Rev. Lett. 93 268902
[16] Obukhov Y N, Hehl F W 2008 Phys. Lett.A 372 3946
[17] Zhao J, Yin R C, Fan T, Lu M H, Chen Y F, Zhu Y Y, Zhu S N, Ming N B 2008 Phys. Rev. B 77 75126
[18] He H C, Lin Y H, Nan C W 2008 Chin.Sci.Bull. 53 1138(in Chinese) [何泓材、林元华、 南策文 2008 科学通报53 1138]
[19] Zhang X J, Zhu R Q, Zhao J, Chen Y F, Zhu Y Y 2004 Phys. Rev. B 69 85118
[20] Liu H, Zhu S N, Dong Z G, Zhu Y Y, Chen Y F, Ming N B, Zhang X 2005 Phys. Rev. B 71 125106
[21] Bao X, Hu M 2001 An Introduction to Electric Devices (Beijing: Beijing Institute of Technology Press) p190 (in Chinese)[包 兴、胡 明 2001 电子器件导论(北京:北京理工大学出版社)第190页]
[22] Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 94409
[23] Dong S X, Zhai J 2008 Phys. Solid State 53 2113
[24] Pettiford C, Dasgupta S, Jin L, Yoon S D, Sun N X 2007 IEEE Trans. Magnetics 43 3343
-
[1] Ramesh R, Spaldin N A 2007 Nature Materials 6 21
[2] Nan C W, Bichurin M I, Dong S X, Viehland A D, Srinivasan G 2008 J. Appl. Phys. 103 31101
[3] Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 1056
[4] Ma J, Shi Z, Lin Y H, Nan C W 2009 Acta Phys. Sin. 58 5852(in Chinese) [马 静、施 展、 林元华、南策文 2009 58 5852]
[5] Yang F, Wen Y M, Li P, Bian L X 2007 Acta Phys. Sin. 56 3537(in Chinese)[杨 帆、文玉梅、李 平、卞雷祥 2007 56 3537]
[6] Bichurin M I, Petrov V M, Ryabkov O V, Averkin S V, Srinivasan G 2005 Phys. Rev. B 72 060408
[7] Bichurin M, Viehland D, Srinivasan G 2007 J. Electro. Ceramics 19 243
[8] Harshe G, Dougherty J P, Newnham R E 1993 Proc. SPIE 1919 224
[9] Dong S X, Li J F, Viehland D 2003 IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control 50 1253
[10] Feigel A 2004 Phys. Rev. Lett. 92 20404
[11] Obukhov Y N, Hehl F W 2007 arXiv v1 0708 11538
[12] van Tiggelen B A, Rikken G L J A 2004 Phys. Rev. Lett. 93 268903
[13] Birkeland O J, Brevik I 2007 Phys. Rev. E 76 66605
[14] Schutzhold R, Plunien G 2004 Phys. Rev. Lett. 93 268901
[15] Feigel A 2004 Phys. Rev. Lett. 93 268902
[16] Obukhov Y N, Hehl F W 2008 Phys. Lett.A 372 3946
[17] Zhao J, Yin R C, Fan T, Lu M H, Chen Y F, Zhu Y Y, Zhu S N, Ming N B 2008 Phys. Rev. B 77 75126
[18] He H C, Lin Y H, Nan C W 2008 Chin.Sci.Bull. 53 1138(in Chinese) [何泓材、林元华、 南策文 2008 科学通报53 1138]
[19] Zhang X J, Zhu R Q, Zhao J, Chen Y F, Zhu Y Y 2004 Phys. Rev. B 69 85118
[20] Liu H, Zhu S N, Dong Z G, Zhu Y Y, Chen Y F, Ming N B, Zhang X 2005 Phys. Rev. B 71 125106
[21] Bao X, Hu M 2001 An Introduction to Electric Devices (Beijing: Beijing Institute of Technology Press) p190 (in Chinese)[包 兴、胡 明 2001 电子器件导论(北京:北京理工大学出版社)第190页]
[22] Bichurin M I, Kornev I A, Petrov V M, Tatarenko A S, Kiliba Y V, Srinivasan G 2001 Phys. Rev. B 64 94409
[23] Dong S X, Zhai J 2008 Phys. Solid State 53 2113
[24] Pettiford C, Dasgupta S, Jin L, Yoon S D, Sun N X 2007 IEEE Trans. Magnetics 43 3343
Catalog
Metrics
- Abstract views: 7265
- PDF Downloads: 594
- Cited By: 0
下载:
