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A series of n-i-p microcrystalline silicon thin film solar cells with different values of crystalline volume fraction Xc of n-type layers are prepared by radio frequency plasma enhanced chemical vapor deposition. It is found that the structure of intrinsic layer is strongly dependent on the structure of n-type layer, especially the incubation layer thickness at n/i interface and Xc of intrinsic layer. This series of solar cells were light-soaked under 100 mW/cm2 for 400 h. The experiment results demonstrate that the solar cell with the highest Xc of intrinsic layer (Xc(i)=65%) has the lowest light-induced degradation ratio. Then the solar cell with n-type layer deposited in an amorphous silicon/microcrystalline silicon transition region (Xc(i) =54%) is light-soaked under the irradiations of white light, red light and blue light with the same light intensities, separately. After 400 h light-soaking, the light degradation ratio is only 2% for the red light irradiation, while it is 8% for the blue light irradiation.
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Keywords:
- microcrystalline silicon /
- n-i-p solar cells /
- light-induced degradation /
- crystalline volume fraction
[1] ［1］Han X Y, Geng X H, Hou G F, Zhang X D, Li G J, Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 ( in Chinese ) ［韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙建、张德坤、赵颖 2009 58 1344］
[2] ［2］Kondo M, Matsui T, Nasuno Y 2006 Thin Solid Films 501 243
[3] ［3］Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, Zhao Y, Geng X H, Li Y G 2007 Acta Phys. Sin. 56 1177 ( in Chinese ) ［侯国付、薛俊明、孙建、郭群超、张德坤、任慧志、赵颖、耿新华、李乙钢 2007 56 1177］
[4] ［4］Yuan Y J, Hou G F, Xue J M, Han X Y, Liu Y Z, Yang X Y, Liu L J, Dong P, Zhao Y, Geng X H 2008 Acta Phys. Sin. 57 3892 ( in Chinese ) ［袁育杰、侯国付、薛俊明、韩晓艳、刘云周、杨兴云、刘丽杰、董培、赵颖、耿新华 2008 57 3892］
[5] ［5］Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G 2007 Chin. Phys. 16 553
[6] ［6］Vallat-Sauvain E, Bailar J, Meier J, Niquille X, Kroll U, Shah A 2005 Thin Solid Films 485 77
[7] ［7］Wagner H, Beyer W 1983 J. Non-Cryst. Solids 59—60 161
[8] ［8］Han X Y, Geng X H, Hou G F, Zhang X D, Li G J, Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 ( in Chinese ) ［韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙建、张德坤、赵颖 2009 58 1344］
[9] ［9］Klein S, Finger F, Carius R, Dylla T, Rech B, Grimm M, Houben L, Stutzmann M 2003 Thin Solid Films 430 202
[10] ］Wronski C R 1996 Sol. Energy Mater. 41—42 427
[11] ］Sculati-Meillaud F 2006 Ph. D. Dissertation (Swiss：Université de Neuchtel)
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[1] ［1］Han X Y, Geng X H, Hou G F, Zhang X D, Li G J, Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 ( in Chinese ) ［韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙建、张德坤、赵颖 2009 58 1344］
[2] ［2］Kondo M, Matsui T, Nasuno Y 2006 Thin Solid Films 501 243
[3] ［3］Hou G F, Xue J M, Sun J, Guo Q C, Zhang D K, Ren H Z, Zhao Y, Geng X H, Li Y G 2007 Acta Phys. Sin. 56 1177 ( in Chinese ) ［侯国付、薛俊明、孙建、郭群超、张德坤、任慧志、赵颖、耿新华、李乙钢 2007 56 1177］
[4] ［4］Yuan Y J, Hou G F, Xue J M, Han X Y, Liu Y Z, Yang X Y, Liu L J, Dong P, Zhao Y, Geng X H 2008 Acta Phys. Sin. 57 3892 ( in Chinese ) ［袁育杰、侯国付、薛俊明、韩晓艳、刘云周、杨兴云、刘丽杰、董培、赵颖、耿新华 2008 57 3892］
[5] ［5］Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G 2007 Chin. Phys. 16 553
[6] ［6］Vallat-Sauvain E, Bailar J, Meier J, Niquille X, Kroll U, Shah A 2005 Thin Solid Films 485 77
[7] ［7］Wagner H, Beyer W 1983 J. Non-Cryst. Solids 59—60 161
[8] ［8］Han X Y, Geng X H, Hou G F, Zhang X D, Li G J, Yuan Y J, Wei C C, Sun J, Zhang D K, Zhao Y 2009 Acta Phys. Sin. 58 1344 ( in Chinese ) ［韩晓艳、耿新华、侯国付、张晓丹、李贵君、袁育杰、魏长春、孙建、张德坤、赵颖 2009 58 1344］
[9] ［9］Klein S, Finger F, Carius R, Dylla T, Rech B, Grimm M, Houben L, Stutzmann M 2003 Thin Solid Films 430 202
[10] ］Wronski C R 1996 Sol. Energy Mater. 41—42 427
[11] ］Sculati-Meillaud F 2006 Ph. D. Dissertation (Swiss：Université de Neuchtel)
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