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According to the latest experiments about the temperature effect of organic magnetoresistance，we employed a drift-diffusion equation and take into account the temperature influence on mobility and spin relaxation to investigate spin polarization and magnetoresistance of the organic semiconductor device. We found that the magnetoresistance in low temperature region decreases faster than that in high temperature region. The change of magnetoresistance with temperature is mainly dependent on spin relaxation time of organic layer. Finally，the theoretical calculation was compared with experimental data and consistency between them was obtained.
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Keywords:
- organic spintronics /
- polaron /
- temperature /
- magnetoresistance
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[15] ］Xie S J，Ahn K H，Smith D L，Bishop A R，Saxena A 2003 Phys. Rev. B 67 125202
[16] ］Yu Z G，Berding M A，Krishnamurthy S 2005 Phys. Rev. B 71 060408
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[19] ］Zhang Y B，Ren J F，Hu G C，Xie S J 2008 Organic Electronic 9 687
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[21] ］Novikov S V，Dunlap D H，Kenker V M，Parris P E，Vannikov A V 1998 Phys. Rev. Lett. 81 4472
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[23] ］Xu W H，Brauer J，Szulczewski G，Driver M S，Carusa A N 2009 Appl. Phys. Lett. 94 233302
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[25] ］Dediu V A，Hueso L E，Bergenti I，Taliani C J 2009 Nature Mater. 8 707
[26] ］Cinchetti1 M，Heimer K，Wüstenberg J P，Andreyev O，Bauer M，Lach S，Ziegler C，Gao Y，Aeschlimann M 2009 Nature Mater. 8 115
[27] ］Xu W，Szulczewski G J 2007 Appl. Phys. Lett. 90 072506
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[1] ［1］Baibich M N，Broto J M，Fert A，Nguyen F D V，Petroff F，Etinne P，Creuzet G，Friederich A，Chazelas J 1988 Phys. Rev. Lett. 61 2472
[2] ［2］Zutic I，Fabin J，Sarma S D 2004 Rev. Mod. Phys. 76 323
[3] ［3］Bloom F L，Wagemans W，Kemerink M，Koopmans B 2007 Phys. Rev. Lett. 99 257201
[4] ［4］Majumdar S，Majumdar H S，Aarnio H，Vanderzande D，Laiho R，sterbacka R 2009 Phys. Rev. B 79 201202
[5] ［5］Zhang Z H，Guo W L，Guo Y F 2006 Acta Phys. Sin. 55 6526（in Chinese） ［张助华、郭万林、郭宇锋 2006 55 6526］
[6] ［6］Wang Z，He Z H，Tang X W，Tao M L，Li G Q，Xiong Z H Y F 2007 Acta Phys. Sin. 56 2979 (in Chinese） ［王振、何正红、谭兴文、陶敏龙、李国庆、熊祖洪 2007 56 2979］
[7] ［7］Naber W J M，Faez S, Wiel W G 2007 J. Phys. D：Appl. Phys. 40 R205
[8] ［8］Dediu V，Murgia M，Matacotta F C，Talinai C，Barbanera S 2002 Solid State Commun. 122 181
[9] ［9］Xiong Z H，Wu D，Vardeny Z V，Shi J 2004 Nature 427 821
[10] ］Majumdar S，Majumdar H S，Laiho R，sterbacka R 2006 J. Alloys Compd. 423 169
[11] ］Dediu V，Hueso L E，Bergenti I，Riminucci A，Borgatti F，GraziosiP，Newby C，Casoli F，Jong M P D，Taliani C，Zhan Y 2008 Phys. Rev. B 78 115203
[12] ］Bowen M，Bibes M，Barthelemy A，Contour J P，Anane A，Lematre Y，Fert A 2003 Appl. phys. Lett. 82 233
[13] ］Bergentia I，Dediua V，Arisia E，Cavallinia M，Biscarini F J 2007 J. Magn. Magn. Mater. 312 453
[14] ］Drew A J，Hoppler J，Schulz L，Pratt F L，Desai P，Shakya P，Kreouzis T，Gillin W P，Suter A，Morley N A，Malik V K，Dubroka A，Kim K W，Bouyanfif H，Bourqui F，Bernhard C，Scheuermann R，Nieuwenhuys G J，Prokscha T，Morenzoni E 2009 Nature Mater. 8 109
[15] ］Xie S J，Ahn K H，Smith D L，Bishop A R，Saxena A 2003 Phys. Rev. B 67 125202
[16] ］Yu Z G，Berding M A，Krishnamurthy S 2005 Phys. Rev. B 71 060408
[17] ］Ren J F，Fu J Y，Liu D S，Xie S J 2004 Acta Phys. Sin. 53 3814（in Chinese） ［任俊峰、付吉永、刘德胜、解士杰 2004 53 3814］
[18] ］Ren J F，Zhang Y B，Xie S J 2004 Acta Phys. Sin. 53 3814 (in Chinese）［任俊峰、张玉滨、解士杰 2004 53 3814］
[19] ］Zhang Y B，Ren J F，Hu G C，Xie S J 2008 Organic Electronic 9 687
[20] ］Kwok H，Wu Y L，Sun T P 2006 IEE Proc.-Circuits Devices Syst. 153 124
[21] ］Novikov S V，Dunlap D H，Kenker V M，Parris P E，Vannikov A V 1998 Phys. Rev. Lett. 81 4472
[22] ］Pramanik S，Stefanita C G，Patibandla S，Bandyopadhyay S，Garre K，Harth N，Cahay M 2007 Nature Nano. 2 216
[23] ］Xu W H，Brauer J，Szulczewski G，Driver M S，Carusa A N 2009 Appl. Phys. Lett. 94 233302
[24] ］Liu Y H，Watson S M，Lee T，Gorham G M，Katz H E，Brochers J A，Fairbrother H D，Reich D H 2009 Phys. Rev. B 79 075312
[25] ］Dediu V A，Hueso L E，Bergenti I，Taliani C J 2009 Nature Mater. 8 707
[26] ］Cinchetti1 M，Heimer K，Wüstenberg J P，Andreyev O，Bauer M，Lach S，Ziegler C，Gao Y，Aeschlimann M 2009 Nature Mater. 8 115
[27] ］Xu W，Szulczewski G J 2007 Appl. Phys. Lett. 90 072506
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