Influence of  Cr interlayer with different thickness on  transition of magnetoresistance effect of Gd/FeCo thin films

Zhang Yi-Wei; Song Heng-Bo; Li Xiao-Yan; Sun Li; Liu Xiao-Ying; Kou Zhao-Xia; Zhang Dong; Fei Hong-Yang; Zhao Zhi-Bin; Zhai Ya

doi:10.7498/aps.71.20220472

Abstract

As one of the most representative features characterizing the spin valve structure, magnetoresistance is an important method to study the interlayer coupling in multilayers. Considering the induced magnetism of rare earth at room temperature due to the coupling and magnetic proximity effect in the structure of rare earth/magnetic transition metal, an intermediate nonmagnetic metal can be inserted to form the spin valve structure to regulate the interlayer coupling, which expands the scope of applications of rare earth in spintronics. In this work, the interlayer exchange coupling and interfacial effects of Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm) trilayers with different Cr layer thickness (t_Cr) are studied by means of in plane magnetoresistance. Compared with FeCo film, Gd/FeCo film obtains more obvious anisotropic magnetoresistance. While the magnetoresistance value obtained for the configuration of I⊥H shows a minimum value at the peak due to the insertion of Cr layer, and this minimum value becomes more pronounced with the increase of t_Cr. When t_Cr = 3 nm, the negative spin valve effect almost totally overcomes the anisotropic-magnetoresistance effect. Different spin asymmetries of scattering that are formed in FeCo layer and Cr/Gd layers are mainly responsible for creating the negative spin valve magnetoresistance, in which the resistance becomes smaller near the coercive, while the resistance becomes larger at high field parallel to magnetic moment. The oscillation of magnetoresistance with t_Cr at I // H and the hysteresis loops at 5 K further confirm the existence of interlayer coupling both at room temperature and 5 K.

Keywords:

Authors and contacts

1.
College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
2.
School of Physics, Southeast University, Nanjing 211189, China
3.
School of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059, China

Corresponding author: Sun Li, lisun_2014@163.com

Funds: Project supported by the Natural Science Foundation of Hainan Province of China (Grant Nos. 2019RC169, 117109, 114008), the National Natural Science Foundation of China (Grant Nos. 12164016, 11364015), the Young Talents’ Science and Technology Innovation Project of Hainan Association for Science and Technology, China (Grant No. QCXM201810), and the Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, China.

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References

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Cited By

图 1 (a) Si(100)衬底上生长的Gd/Cr/FeCo结构示意图, 2 nm Ta作为保护层和缓冲层; (b)—(d) FeCo (5 nm)薄膜和不同厚度Gd层的Gd/Cr (1 nm)/FeCo (5 nm) 薄膜的 XRD图谱 (图1(c)插图是Ta (2 nm)/Gd (4 nm)/Ta (2 nm) 薄膜的Gd衍射峰)

Figure 1. (a) Schematic diagram of the film structure for Gd/Cr/FeCo on Si(100) with Ta (2 nm) as the capping layer and buffering layer; (b)–(d) XRD patterns for the FeCo (5 nm) and Gd/Cr (1 nm)/FeCo (5 nm) films with different thickness of Gd layer. (The inset of Fig. 1(c) shows the diffraction peak of Gd for Ta (2 nm)/Gd (4 nm)/Ta (2 nm) film).

DownLoad: Full-Size Img PowerPoint

图 2 (a)—(c) 具有代表性的薄膜在室温下的面内磁滞回线; (d) 室温和 5 K下不同厚度 Cr层的Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm)薄膜的矫顽力H_c, 为便于比较, 其中包含FeCo薄膜室温下的矫顽力, 实线只是用来观察变化趋势

Figure 2. (a)–(c) Typical in-plane magnetization hysteresis loops for films at room temperature; (d) the coercivity H_c of Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm) films with different thickness of Cr layer at room temperature and 5 K, and the coercivity of FeCo film also presented for comparison. The solid lines only guide to the eye in panel (d).

DownLoad: Full-Size Img PowerPoint

图 3 室温且I⊥H时, FeCo薄膜(a)和不同Cr厚度Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm)薄膜(b)—(h)的MR随磁场的变化　(a) FeCo; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 3.5 nm (图3(a)右上角插图表示电流方向垂直于磁场方向, 磁场沿着薄膜平面内; 实心点表示磁场下降的分支, 空心点表示磁场上升的分支; 其余插图均为对应阴影部分的放大图)

Figure 3. Variation of MR with the magnetic field for (a) FeCo film and (b)–(h) Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm) films with different thickness of Cr at the room temperature and I⊥H: (a) FeCo film; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 3.5 nm (The current direction is perpendicular to the direction of magnetic field, and the magnetic field is along the in-plane of the film, as shown in top-right of Fig. 3(a). Solid dots indicate downwards branches, open dots indicate upwards branches. The other insets are the enlarged images of the corresponding shaded parts).

DownLoad: Full-Size Img PowerPoint

图 4 室温且I//H时, FeCo薄膜(a)和不同Cr厚度Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm)薄膜(b)—(h)的MR随磁场的变化　(a) FeCo; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 3.5 nm (图4(a)左边插图表示电流方向平行于磁场方向, 磁场沿着薄膜平面内; 实心点表示磁场下降的分支, 空心点表示磁场上升的分支; 其余插入图均为对应阴影部分的放大图)

Figure 4. Variation of MR with the magnetic field for (a) FeCo film and (b)–(h) Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm) films with different thickness of Cr at the room temperature and I//H: (a) FeCo film; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 3.5 nm (With current parallel to H, and the magnetic field is along the in-plane of the film, as illustrated the inset in the left of Fig. 4(a). Solid dots indicate downwards branches, open dots indicate upwards branches. The other insets are the enlarged images of the corresponding shaded parts).

DownLoad: Full-Size Img PowerPoint

图 5 室温下电流方向平行于磁场方向时, MR最大值(MR_max)和薄膜单位面积饱和磁化强度(M_s)与Cr层厚度的变化关系

Figure 5. Relationship of the maximum magnetoresistance (MR_max) with the configuration of current parallel to the magnetic field and saturation magnetization per unit area (M_s) to the film and the thickness of the Cr layer at room temperature.

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图 6 5 K时, FeCo薄膜(a)和不同Cr厚度Gd (4 nm)/Cr (t_Cr)/FeCo (5 nm) 薄膜(b)—(h)的面内磁滞回线　(a) FeCo薄膜; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 4.0 nm (虚线矩形方框是具有Cr中间层薄膜的磁滞回线中矩形度较好的部分)

Figure 6. In-plane magnetization hysteresis loops for (a) FeCo film and (b)–(h) Gd (4 nm)/Cr(t_Cr)/FeCo (5 nm) films with different thickness of 5 K: (a) FeCo film; (b) t_Cr = 0; (c) t_Cr = 1.0 nm; (d) t_Cr = 1.5 nm; (e) t_Cr = 2.0 nm; (f) t_Cr = 2.5 nm; (g) t_Cr = 3.0 nm; (h) t_Cr = 4.0 nm (The easy magnetized parts are marked by rectangles in the hysteresis loop for films with Cr spacer layer).

DownLoad: Full-Size Img PowerPoint

表 1 不同 Cr 层厚度的Gd/Cr/FeCo薄膜在5 K下的单位面积饱和磁化强度(M_sLT)、 5 K下磁滞回线中间矩形度较好部分的磁矩(见图6矩形)占总薄膜磁矩的比例(R)、R部分的磁矩(M_FeCo)、磁滞回线中缓慢磁化部分对应的磁矩(M)

Table 1. Saturation magnetization per area at 5 K (M_sLT) for Gd/Cr/FeCo films with different thickness of Cr layer (t_Cr), the percentage (R) of the magnetic moment in the middle of the hysteresis loop with better squareness (represented by the rectangles in Fig. 6) to the total magnetic moment at 5 K, the magnetic moment (M_FeCo) of R, and the magnetic moment (M) in the slowly magnetized part of the hysteresis loop.

t_Cr/nm	M_sLT/(10^–4 emu·cm^–2)	R	M_FeCo/(10^–4 emu·cm^–2)	M/(10^–4 emu·cm^–2)
0	7.52 ± 0.75	—	—	—
1.0	11.30 ± 1.13	0.69	7.78 ± 0.78	4.02 ± 0.40
1.5	11.65 ± 0.12	0.65	7.60 ± 0.76	4.37 ± 0.44
2.0	15.30 ± 0.15	0.48	7.29 ± 0.73	8.02 ± 0.80
2.5	17.03 ± 1.70	0.46	7.78 ± 0.78	9.75 ± 0.98
3.0	10.87 ± 1.09	0.68	7.35 ± 0.74	3.59 ± 0.36
4.0	10.56 ± 1.06	0.64	6.73 ± 0.67	3.28 ± 0.33

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[1]	Lee J C T, Chess J J, Montoya S A, Shi X, Tamura N, Mishra S K, Fischer P, McMorran B J, Sinha S K, Fullerton E E, Kevan S D, Roy S 2016 Appl. Phys. Lett. 109 022402 Google Scholar
[2]	Talapatra A, Chelvane J A, Satpati B, Kumar S, Mohanty J 2019 J. Alloy. Compd. 774 1059 Google Scholar
[3]	Bhatt R C, Liao C M, Ye L X, Hai N T, Wu J C, Wu T H 2021 J. Magn. Magn. Mater. 526 167734 Google Scholar
[4]	Inyang O, Rafiq A, Swindells C, Ali S, Atkinson D 2020 Sci. Rep. 10 9767 Google Scholar
[5]	Kirk E, Bull C, Finizio S, et al. 2020 Phys. Rev. Mater. 4 074403 Google Scholar
[6]	Huang M, Qiu Z, Wang F, Luo H, Zhang J 2022 J. Alloy. Compd. 901 163619 Google Scholar
[7]	Ming X, Han X, Yang M, Yan G 2022 J. Magn. Magn. Mater. 550 169064 Google Scholar
[8]	Jin H M 1983 J. Magn. Magn. Mater. 35 283 Google Scholar
[9]	Elhamali S M, Ibrahim N B, Radiman S 2018 Mater. Chem. Phys. 208 1 Google Scholar
[10]	Talapatra, Chelvane J A, Mohanty J 2021 J. Alloy. Compd. 861 157953 Google Scholar
[11]	Wang K, Tang Y, Zhang K, Wang Y, Liu J 2021 Mater. Sci. Eng. B-Adv. 263 114848 Google Scholar
[12]	Basumatary H, Chelvane J A, Rao D V S, Talapatra A, Mohanty J, Kumar D, Singh V, Kamat S V, Ranjan R 2021 J. Alloy. Compd. 869 159571 Google Scholar
[13]	Bhatt R C, Ye L X, Hai N T, Wu J C, Wu T H 2021 J. Magn. Magn. Mater. 537 168196 Google Scholar
[14]	Stanciu A E, Schinteie G, Kuncser A, Iacob N, Trupina L, Ionita I, Crisan O, Kuncser V 2020 J. Magn. Magn. Mater. 498 166173 Google Scholar
[15]	Morishita T, Togami Y, Tsushima K 1986 J. Magn. Magn. Mater. 54–57 789 Google Scholar
[16]	Frąckowiak Ł, Stobiecki F, Urbaniak M, Matczak M, Chaves-O`Flynn G D, Bilski M, Glenz A, Kuświk P 2022 J. Magn. Magn. Mater. 544 168682 Google Scholar
[17]	Wang J, Li C, Wang Y, Tang R, Chai G, Jiang C 2021 Appl. Surf. Sci. 567 150527 Google Scholar
[18]	Rebei A, Hohlfeld J 2006 Phys. Rev. Lett. 97 117601 Google Scholar
[19]	高瑞鑫, 徐振, 陈达鑫, 徐初东, 陈志峰, 刘晓东, 周仕明, 赖天树 2009 58 580 Google Scholar Gao R X, Xu Z, Chen D X, Xu C D, Chen Z F, Liu X D, Zhou S M, Lai T S 2009 Acta Phys. Sin. 58 580 Google Scholar
[20]	Sun L, Yue J J, Jiang S, Xu Y J, Li Q N, Chen Q, Zhou X C, Huang Z C, Yao Z Y, Zhai Y, Zhai H R 2017 J. Alloy. Compd. 695 1324 Google Scholar
[21]	Guo H S, Li L Z, Wu X H, Zhong Z C, Tao Z X, Wang F H, Wang T 2021 J. Magn. Magn. Mater. 538 168249 Google Scholar
[22]	Ceballos A, Pattabi A, El-Ghazaly A, Ruta S, Simon C P, Evans R F L, Ostler T, Chantrell R W, Kennedy E, Scott M, Bokor J, Hellman F 2021 Phys. Rev. B 103 024438 Google Scholar
[23]	侯育花, 黄有林, 刘仲武, 曾德长 2015 64 037501 Google Scholar Hou Y H, Huang Y L, Liu Z W, Zeng D C 2015 Acta Phys. Sin. 64 037501 Google Scholar
[24]	Hao A, Ismail M, He S, Qin N, Chen R, Rana A M, Bao D 2018 Mater. Sci. Eng. B-Adv. 229 86 Google Scholar
[25]	Chakrabarty S, Sinha A, Dutta A, Pal M 2018 J. Magn. Magn. Mater. 468 215 Google Scholar
[26]	Bulai G, Trandafir V, Irimiciuc S A, Ursu L, Focsa C, Gurlui S 2019 Ceram. Int. 45 20165 Google Scholar
[27]	Bohr C, Yu P, Scigaj M, Hegemann C, Fischer T, Coll M, Mathur S 2020 Thin Solid Films 698 137848 Google Scholar
[28]	Sharma S, Verma M K, Sharma N D, Choudhary N, Singh S, Singh D 2021 Ceram. Int. 47 17510 Google Scholar
[29]	Li N, Tang J, Su L, Ke Y J, Zhang W, Xie Z K, Sun R, Zhang X Q, He W, Cheng Z H 2021 Chin. Phys. B 30 117502 Google Scholar
[30]	Shan Z S, Sellmyer D J 1990 Phys. Rev. B 42 10433 Google Scholar
[31]	Kim W S, Andrä W, Kleemann W 1998 Phys. Rev. B 58 6346 Google Scholar
[32]	Schmidt T, Hoffmann H 2002 J. Magn. Magn. Mater. 248 181 Google Scholar
[33]	Drovosekov A B, Savitsky A O, Kholin D I, Kreines N M, Proglyado V V, Makarova M V, Kravtsov E A, Ustinov V V 2019 J. Magn. Magn. Mater. 475 668 Google Scholar
[34]	Xiang O, Xiong C, Wang Z, Zhang Y, Xu Y, Yi L, Piao H G, Pan L 2020 J. Magn. Magn. Mater. 516 167334 Google Scholar
[35]	Basha M A, Prajapat C L, Bhatt H, Kumar Y, Gupta M, Kinane C J, Cooper J F K, Langridge S, Basu S, Singh S 2020 J. Magn. Magn. Mater. 516 167331 Google Scholar
[36]	Mattson J E, Sowers C H, Berger A, Bader S D 1992 Phys Rev Lett. 68 3252 Google Scholar
[37]	Bellouard C, George B, Marchal G, Maloufi N, Eugène J 1997 J. Magn. Magn. Mater. 165 312 Google Scholar
[38]	Sun L, Li X Y, Zhao X C, Ban D M, Li G J, Yao Z H, Zhao Z B, Zhai Y, Cui X Y 2021 J Mater Sci: Mater Electron 32 28245 Google Scholar
[39]	George J M, Pereira L G, Barthélémy A, Petroff F, Steren L, Duvail J L, Fert A, Loloee R, Holody P, Schroeder P A 1994 Phys. Rev. Lett. 72 408 Google Scholar
[40]	Renard J P, Bruno P, Mégy R, Bartenlian B, Beauvillain P, Chappert C, Dupas C, Kolb E, Mulloy M, Veillet P, Vélu E 1995 Phys. Rev. B 51 12821 Google Scholar
[41]	Sanyal B, Antoniak C, Burkert T, Krumme B, Warland A, Stromberg F, Praetorius C, Fauth K, Wende H, Eriksson O 2010 Phys. Rev. Lett. 104 156402 Google Scholar
[42]	Scheunert G, Hendren W R, Ward C, Bowman R M 2012 App. Phys. Lett. 101 142407 Google Scholar
[43]	Liu Y F, Cai J W, Sun L 2010 Appl. Phys. Lett. 96 092509 Google Scholar
[44]	Jiao Z, Chen H, Jiang W, Wang J, Zhou Y, Yu S, Hou Y, Ye Q 2015 Mater. Lett. 158 241 Google Scholar
[45]	Zhao W, Liu C, Huang W, Hou C, Chen Z, Luo Z, Yin Y, Li X 2019 Mater. Lett. 240 124 Google Scholar
[46]	Peng C, Chen D, Dai D 1993 Solid State Commun. 87 161 Google Scholar
[47]	Parkin S S P, More N, Roche K P 1990 Phys, Rev. Lett. 64 2304 Google Scholar
[48]	Parkin S S P, Bhadra R, Roche K P 1991 Phys. Rev. Lett. 66 2152 Google Scholar

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Vol. 71, Issue 21 - 2022-11-05

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