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To correct the error in theoretical model of process stress accelerated test, a new calculation method is proposed. The new method, based on computer-aided calculation, can significantly reduce the error of the model. Theoretical data is calculated using both the novel model algorithm, which is the root test method, and the old model algorithm. The results shows that the old model algorithm can generate errors of more than 13% in the activation energy, and of errors more than 150% in the extrapolated lifetime（Q≤10 eV）,while the novel model algorithm generates errors in less than 1% in activation energy, and errors less than -41% in the extrapolated lifetime.
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Keywords:
- accelerated test /
- process-stress /
- theory model /
- error correction
[1] ［1］Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) ［胡瑾、杜磊、庄奕琪、包军林、周江 2006 55 1384 ］
[2] ［2］Luan S Z, Liu H X, Jia R X 2008 Acta Phys. Sin. 57 2524 (in Chinese) ［栾苏珍、刘红侠、贾仁需2008 57 2524 ］
[3] ［3］Hu J M, Barker D, Dasgupta A 1993 J. lnst. Eng. Singapore 36 39
[4] ［4］Redhead P A 1962 Vacuum 12 203
[5] ［5］Xing X S 1986 Acta Phys. Sin. 35 741 (in Chinese) ［邢修三 1986 35 741 ］
[6] ［6］Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta 2 Phys. Sin. 57 472 (in Chinese) ［沈光地、张剑铭、邹德恕、徐晨、顾晓玲 2008 57 472 ］
[7] ［7］Pasco R W, Schwarz J A 1983 Solid State Electron. 26 445
[8] ［8］Li Z G, Song Z C, Cheng Y H 2003 IEEE International Reliability Physics Symposium Proceedings Dallas, USA, March 4, 2003, p576
[9] ［9］Li Z G, Song Z C, Sun D P 2003 Chin. J. Semicond. 24 856 ［李志国、宋增超、孙大鹏 2003 半导体学报 24 856］
[10] ］Zhang W R, Li Z G, Mu F C 2001 Proceedings of 8 IPFA the International Symposium on Physical and Failure Analysis of Intergated Circuits Singapore, July 13, 2001, p134
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[1] ［1］Hu J, Du L, Zhuang Y Q, Bao J L, Zhou J 2006 Acta Phys. Sin. 55 1384 (in Chinese) ［胡瑾、杜磊、庄奕琪、包军林、周江 2006 55 1384 ］
[2] ［2］Luan S Z, Liu H X, Jia R X 2008 Acta Phys. Sin. 57 2524 (in Chinese) ［栾苏珍、刘红侠、贾仁需2008 57 2524 ］
[3] ［3］Hu J M, Barker D, Dasgupta A 1993 J. lnst. Eng. Singapore 36 39
[4] ［4］Redhead P A 1962 Vacuum 12 203
[5] ［5］Xing X S 1986 Acta Phys. Sin. 35 741 (in Chinese) ［邢修三 1986 35 741 ］
[6] ［6］Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta 2 Phys. Sin. 57 472 (in Chinese) ［沈光地、张剑铭、邹德恕、徐晨、顾晓玲 2008 57 472 ］
[7] ［7］Pasco R W, Schwarz J A 1983 Solid State Electron. 26 445
[8] ［8］Li Z G, Song Z C, Cheng Y H 2003 IEEE International Reliability Physics Symposium Proceedings Dallas, USA, March 4, 2003, p576
[9] ［9］Li Z G, Song Z C, Sun D P 2003 Chin. J. Semicond. 24 856 ［李志国、宋增超、孙大鹏 2003 半导体学报 24 856］
[10] ］Zhang W R, Li Z G, Mu F C 2001 Proceedings of 8 IPFA the International Symposium on Physical and Failure Analysis of Intergated Circuits Singapore, July 13, 2001, p134
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