4,4,4-三(N-3-甲基苯基-N-苯基氨基)三苯胺掺杂MoOx作为空穴传输层对有机太阳电池性能的影响

赵理; 刘东洋; 刘东梅; 陈平; 赵毅; 刘式墉

doi:10.7498/aps.61.088802

摘要

通过采用4,4,4-三(N-3-甲基苯基-N-苯基氨基)三苯胺(m-MTDATA)掺入MoOx作为器件的空穴传输层来提高酞菁铜(CuPc)/C60小分子有机太阳电池的效率. 采用真空蒸镀的方法制备了一系列器件, 其中结构为铟锡氧化物(ITO)/m-MTDATA:MoOx(3:1)(30 nm)/CuPc(20 nm)/C60(40 nm)/4,7-二苯基-1,10-菲罗啉(Bphen)(8 nm)/LiF(0.8 nm)/Al(100 nm)的器件, 在AM1.5 (100 mW/cm2)模拟太阳光的照射条件下, 开路电压Voc=0.40 V, 短路电流Jsc=6.59 mA/cm2, 填充因子为0.55, 光电转换效率达1.46%, 比没有空穴传输层的器件ITO/CuPc(20 nm)/C60(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm)光电转换效率提高了38%. 研究表明, 加入m-MTDATA:MoOx(3:1)(30 nm)空穴传输层减小了有机层和ITO电极之间的接触电阻, 从而减小了整个器件的串联电阻, 提高了器件的光电转换效率.

关键词:

Abstract

MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N-phenylamin) triphenylamine (m-MTDATA) is used as a hole transport layer to improve the efficiency of CuPc/C60 small molecular organic photovoltaics. A series of devices is fabricated in a high vacuum system. One of the devices with the structure of indum tin oxides (ITO)/m-MTDATA:MoOx(3:1)(30 nm)/CuPc(20 nm)/C60(40 nm)/Bphen (8 nm)/LiF(0.8 nm)/Al(100 nm) shows that the following parameters are achieved: the open circuit voltage Voc = 0.40 V, short-circuit current Jsc=6.59 mA/cm2, fill factor of 0.55, and power conversion efficiency p=1.46% under AM1.5 solar illumination. The efficiency of the device is improved by 38% compared with that of the device without hole transport layer ITO/CuPc(20 nm)/C60(40 nm)/Bphen(8 nm)/LiF(0.8 nm)/Al(100 nm). The improvement of the device performance may be attributed to the addition of m-MTDATA:MoOx (3:1) (30 nm) hole transport layer that reduces the contact resistance between the ITO electrode and the organic layer, thus reducing the overall device series resistance and improving the efficiency of the device.

Keywords:

作者及机构信息

1.
吉林大学电子科学与工程学院, 集成光电子学国家重点实验室, 长春 130012

基金项目: 国家重点基础研究发展计划 (批准号: 2010CB327701)、国家高技术研究发展计划(批准号: 2011AA03A110)、国家自然科学基金(批准号: 60907013, 60906021, 60977024, 60876032, 60706018)和吉林省自然科学基金(批准号: 20090136)资助的课题.

Authors and contacts

1.
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB327701), the National High Technology Research and Development Program of China (Grant No. 2011AA03A110), the National Natural Science Foundation of China (Grant Nos. 60907013, 60906021, 60977024, 60876032, 60706018), and the Natural Science Foundation of Jilin Province, China (Grant No. 20090136).

参考文献

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施引文献

[1]	Tang C W 1986 Appl. Phys. Lett. 48 183
[2]
[3]
[4]	Feng W, Gao Z K 2008 Acta Phys. Sin. 57 2567 (in Chinese) [封伟, 高中扩 2008 57 2567]
[5]
[6]	Xing H W, Peng Y Q, Yang Q S, Ma C Z, Wang R S, Li X S 2008 Acta Phys. Sin. 57 7374 (in Chinese) [邢宏伟, 彭应全, 杨青森, 马朝柱, 汪润生, 李训栓 2008 57 7374]
[7]
[8]	Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143
[9]	Wang N N, Yu J S, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602
[10]
[11]
[12]	Peumans P, Bulovic V, Forrest S R 2000 Appl. Phys. Lett. 76 2650
[13]
[14]	Peumans P, Forrest S R 2001 Appl. Phys. Lett. 79 126
[15]
[16]	Xue J, Uchida S, Rand B P, Forrest S R 2004 Appl. Phys. Lett. 84 3013
[17]
[18]	Chan M Y, Lai S L, Fung M K, Lee C S, Lee S T 2007 Appl. Phys. Lett. 90 023504
[19]	Liang Y, Xu Z, Xia J, Tsai S, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 1
[20]
[21]
[22]	Service R F 2011 Science 332 293
[23]	Forrest S R 2005 MRS Bull. 30 28
[24]
[25]
[26]	Zhou X, Pfeiffer M, Blochwitz J, Werner A, Nollau A, Fritz T, Leo K 2001 Appl. Phys. Lett. 78 410
[27]
[28]	Zhou X, Qin D S, Pfeiffer M, Blochwitz-Nimoth J, Werner A, Drechsel J, Maennig B, Leo K, Bold M, Erk K, Hartmann H 2002 Appl. Phys. Lett. 81 4070
[29]	Huang J, Pfeiffer M, Werner A, Blochwitz J, Liu S 2002 Appl. Phys. Lett. 80 139
[30]
[31]	Pfeiffer M, Forrest S R, Leo K, Thompson M E 2002 Adv. Mater. 14 1633
[32]
[33]
[34]	Pfeiffer M, Forrest S R, Zhou X, Leo K 2003 Org. Electron. 4 21
[35]
[36]	Maennig B, Drechsel J, Gebeyehu D, Simon P, Kozlowski F, Werner A, Li F, Leo K 2004 Appl. Phys. A 79 1
[37]	Xie G H, Meng Y L, Wu F M, Tao C, Zhang D D, Liu M J, Xue Q, Chen W, Zhao Y 2008 Appl. Phys. Lett. 92 093305
[38]
[39]	Wang J C, Ren X C, Shi S Q, Leung C W, Chan P K L 2011 Org. Electron. 12 880
[40]
[41]	Shirota Y 2000 J. Mater. Chem. 10 1
[42]
[43]
[44]	Terao Y, Sasabe H, Adachi C 2007 Appl. Phys. Lett. 90 103515
[45]	Peumans P, Yakimov A, Forrest S R 2003 J. Appl. Phys. 93 3693

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