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Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction

Wang Huan Yao Shu-De Pan Yao-Bo Zhang Guo-Yi

Citation:

Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction

Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi
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  • Abstract views:  9456
  • PDF Downloads:  1522
  • Cited By: 0
Publishing process
  • Received Date:  12 July 2006
  • Accepted Date:  13 November 2006
  • Published Online:  05 March 2007

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