| [1] |
Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
doi: 10.7498/aps.66.158501
|
| [2] |
Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
doi: 10.7498/aps.63.207304
|
| [3] |
Liao Wu-Gang, Zeng Xiang-Bin, Wen Guo-Zhi, Cao Chen-Chen, Ma Kun-Peng, Zheng Ya-Juan. Photoluminescences and structrue performances of Si-rich silicon nitride thin films containing Si quantum dots. Acta Physica Sinica,
2013, 62(12): 126801.
doi: 10.7498/aps.62.126801
|
| [4] |
Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate. Acta Physica Sinica,
2013, 62(7): 076108.
doi: 10.7498/aps.62.076108
|
| [5] |
Sun Yun, Wang Sheng-Lai, Gu Qing-Tian, Xu Xin-Guang, Ding Jian-Xu, Liu Wen-Jie, Liu Guang-Xia, Zhu Sheng-Jun. Study of KDP crystal lattice strain and stress by high resolution X-ray diffraction. Acta Physica Sinica,
2012, 61(21): 210203.
doi: 10.7498/aps.61.210203
|
| [6] |
Li Su-Mei, Song Shu-Mei, Lü Ying-Bo, Wang Ai-Fang, Wu Ai-Ling, Zheng Wei-Min. Photoluminescence study of quantum confined acceptors. Acta Physica Sinica,
2009, 58(7): 4936-4940.
doi: 10.7498/aps.58.4936
|
| [7] |
Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di. Improving the quantum well properties with n-type InGaN/GaN superlattices layer. Acta Physica Sinica,
2009, 58(1): 590-595.
doi: 10.7498/aps.58.590
|
| [8] |
Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing. Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica,
2008, 57(6): 3786-3790.
doi: 10.7498/aps.57.3786
|
| [9] |
Ji Zi-Wu, Mino Hirofumi, Kojima Eiji, Akimoto Ryoichi, Takeyama Shojiro. Optical property of modulated n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica,
2008, 57(5): 3260-3266.
doi: 10.7498/aps.57.3260
|
| [10] |
Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De. Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica,
2008, 57(4): 2445-2449.
doi: 10.7498/aps.57.2445
|
| [11] |
. Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriers. Acta Physica Sinica,
2007, 56(12): 7295-7299.
doi: 10.7498/aps.56.7295
|
| [12] |
Wang Huan, Yao Shu-De, Pan Yao-Bo, Zhang Guo-Yi. Strain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction. Acta Physica Sinica,
2007, 56(6): 3350-3354.
doi: 10.7498/aps.56.3350
|
| [13] |
Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
doi: 10.7498/aps.55.2476
|
| [14] |
Wang Kun, Yao Shu-De, Hou Li-Na, Ding Zhi-Bo, Yuan Hong-Tao, Du Xiao-Long, Xue Qi-Kun. Depth-dependent elastic strain in ZnO/Zn0.9Mg0.1O/ZnO heterostructure studied by Rutherford backscattering/channeling. Acta Physica Sinica,
2006, 55(6): 2892-2896.
doi: 10.7498/aps.55.2892
|
| [15] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai. Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica,
2006, 55(6): 2977-2981.
doi: 10.7498/aps.55.2977
|
| [16] |
Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
doi: 10.7498/aps.54.5344
|
| [17] |
Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica,
2004, 53(1): 204-209.
doi: 10.7498/aps.53.204
|
| [18] |
Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2004, 53(8): 2467-2471.
doi: 10.7498/aps.53.2467
|
| [19] |
Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica,
2003, 52(10): 2558-2562.
doi: 10.7498/aps.52.2558
|
| [20] |
LI CHAO-RONG, WU LI-JUN, CHEN WAN-CHUN. STUDIES OF THE IMPURITY EFFECTS ON CRYSTALLINE QUALITY BY HIGH-RESOLUTION X-RAY DIFFRACTION. Acta Physica Sinica,
2001, 50(11): 2185-2191.
doi: 10.7498/aps.50.2185
|
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