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Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing. Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica,
2017, 66(22): 227801.
doi: 10.7498/aps.66.227801
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Xu Ling-Mao, Gao Chao, Dong Peng, Zhao Jian-Jiang, Ma Xiang-Yang, Yang De-Ren. Dislocation motion during rapid thermal processing of single-crystalline silicon wafers. Acta Physica Sinica,
2013, 62(16): 168101.
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Gao Wang, Hu Ming, Hou Shun-Bao, Lü Zhi-Jun, Wu Bin. Preparation of vanadium oxide thin films by oxidation with rapid thermal processing. Acta Physica Sinica,
2013, 62(1): 018104.
doi: 10.7498/aps.62.018104
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Hou Qing-Yu, Ma Wen, Ying Chun. First principles study of effects of the concentration of Ga/N highly doped p-type ZnO on electric conductivity performance and red shift. Acta Physica Sinica,
2012, 61(1): 017103.
doi: 10.7498/aps.61.017103
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Zhang Zhen-Duo, Hou Qing-Yu, Li Cong, Zhao Chun-Wang. First-principles study of the electronic structure and absorption spectrum of heavily Nd-doped anatase TiO2. Acta Physica Sinica,
2012, 61(11): 117102.
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Wu Bin, Hu Ming, Hou Shun-Bao, Lü Zhi-Jun, Gao Wang, Liang Ji-Ran. Preparation and characteristic of phase transition vanadium oxide thin films by rapid thermal process. Acta Physica Sinica,
2012, 61(18): 188101.
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Wang Li-Hong, You Jing-Lin, Wang Yuan-Yuan, Zheng Shao-Bo, Simon Patrick, Hou Min, Ji Zi-Fang. Temperature dependent Raman spectra and micro-structure study of hexagonal MgTiO3 crystal. Acta Physica Sinica,
2011, 60(10): 104209.
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Hou Qing-Yu, Zhao Chun-Wang, Jin Yong-Jun, Guan Yu-Qin, Lin Lin, Li Ji-Jun. Effects of the concentration of Ga high doping on electric conductivity and red shift of ZnO from frist-principles. Acta Physica Sinica,
2010, 59(6): 4156-4161.
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Peng Wen-Bo, Liu Shi-Yong, Xiao Hai-Bo, Zhang Chang-Sha, Shi Ming-Ji, Zeng Xiang-Bo, Xu Yan-Yue, Kong Guang-Lin, Yu Yu-De. Gap states and microstructure of microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(8): 5716-5720.
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Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(2): 1293-1297.
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Zhang Yong, Liu Yan, Lü Bin, Tang Nai-Yun, Wang Ji-Qing, Zhang Hong-Ying. Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells. Acta Physica Sinica,
2009, 58(4): 2829-2835.
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Duan Bao-Xing, Yang Yin-Tang. Calculation of Raman shifts of Si（1-x）Gex and amorphous silicon using Keating model. Acta Physica Sinica,
2009, 58(10): 7114-7118.
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Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon films. Acta Physica Sinica,
2007, 56(5): 2790-2795.
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Wang Xiao, Pan An-Lian, Liu Dan, Bai Yong-Qiang, Zhang Zhao-Hui, Zou Bing-Suo, Zhu Xing. Near-field detected photoluminescence spectra of CdS0.65Se0.35 nanoribbon at room temperature. Acta Physica Sinica,
2007, 56(11): 6352-6357.
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Bai Ying, Lan Yan-Na, Mo Yu-Jun. Temperature measurement from the Raman spectra of porous silicon. Acta Physica Sinica,
2005, 54(10): 4654-4658.
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Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang. Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica,
2005, 54(10): 4633-4637.
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Zhang Yong, Tang Chao-Qun, Dai Jun. Anatase TiO2 and red-shift introduced by doping with Fe:pseudopotential calculations and ultraviolet spectroscropy. Acta Physica Sinica,
2005, 54(1): 323-327.
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Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Wu Chun-Ya, Gao Yan-Tao, Hou Guo-Fu, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD. Acta Physica Sinica,
2005, 54(1): 445-449.
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Zhang Qiu-Ju, Sheng Zheng-Ming, Zhang Jie. Redshift of harmonics by laser interaction with solid target. Acta Physica Sinica,
2004, 53(7): 2180-2183.
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2002, 51(2): 367-371.
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