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Zhang Cai-Xia, Ma Xiang-Chao, Zhang Jian-Qi. Theoretical study on surface plasmon and hot carrier transport properties of Au(111) films. Acta Physica Sinica,
2022, 71(22): 227801.
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Jiang Cheng-Xin, Chen Ling-Xiu, Wang Hui-Shan, Wang Xiu-Jun, Chen Chen, Wang Hao-Min, Xie Xiao-Ming. Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer. Acta Physica Sinica,
2021, 70(6): 069801.
doi: 10.7498/aps.70.20201482
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Chen Xing-Yuan, Huang Yao, Peng Yi-Tian. Tribological properties of suspended hexagonal boron nitride under electric field. Acta Physica Sinica,
2021, 70(16): 166801.
doi: 10.7498/aps.70.20210386
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Zhang Song-Ran, He Dai-Hua, Tu Hua-Yao, Sun yan, Kang Ting-Ting, Dai Ning, Chu Jun-Hao, Yu Guo-Lin. Magnetotransport properties and stress control of HgCdTe thin film. Acta Physica Sinica,
2020, 69(5): 057301.
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Chen Ling-Xiu, Wang Hui-Shan, Jiang Cheng-Xin, Chen Chen, Wang Hao-Min. Synthesis and characterization of graphene nanoribbons on hexagonal boron nitride. Acta Physica Sinica,
2019, 68(16): 168102.
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Liu Meng-Xi, Zhang Yan-Feng, Liu Zhong-Fan. Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures. Acta Physica Sinica,
2015, 64(7): 078101.
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Tian Wen, Yuan Peng-Fei, Yu Zhuo-Liang, Tao Bin-Kai, Hou Sen-Yao, Ye Cong, Zhang Zhen-Hua. Electronic properties of doped hexagonal graphene. Acta Physica Sinica,
2015, 64(4): 046102.
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Yan Qian, Lu Cui-Min, Feng Dian-Wen, Yang Wei-Wei, Zhao Jie, Liu Qing-Suo, Ma Yong-Chang. Investigation of carrier transport properties along the c-axis in K0.8Fe2Se2 superconducting crystals. Acta Physica Sinica,
2014, 63(3): 037401.
doi: 10.7498/aps.63.037401
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Xue Zhen-Jie, Li Kui-Ying, Sun Zhen-Ping. Carrier transport characteristics in CdSe/CdS/Thioglycolic acid ligand quantum dots with a core-shell structure. Acta Physica Sinica,
2013, 62(6): 066801.
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Wang Jian, Xie Zi-Li, Zhang Rong, Zhang Yun, Liu Bin, Chen Peng, Han Ping. Study on the photoluminescence properties of InN films. Acta Physica Sinica,
2013, 62(11): 117802.
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Luo Bing-Cheng, Chen Chang-Le, Xie Lian. Electrical transport and photo-induced properties in Fe3O4 film. Acta Physica Sinica,
2011, 60(2): 027306.
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Wang Li-Hong, You Jing-Lin, Wang Yuan-Yuan, Zheng Shao-Bo, Simon Patrick, Hou Min, Ji Zi-Fang. Temperature dependent Raman spectra and micro-structure study of hexagonal MgTiO3 crystal. Acta Physica Sinica,
2011, 60(10): 104209.
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Lü Hui-Min, Shi Zhen-Hai, Chen Guang-De. Synthesis of pure hexagonal phase aluminium nitride foam. Acta Physica Sinica,
2009, 58(9): 6403-6407.
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Zhang Zeng, Zhang Rong, Xie Zi-Li, Liu Bin, Xiu Xiang-Qian, Li Yi, Fu De-Yi, Lu Hai, Chen Peng, Han Ping, Zheng You-Dou, Tang Chen-Guang, Chen Yong-Hai, Wang Zhan-Guo. Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD. Acta Physica Sinica,
2009, 58(5): 3416-3420.
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Ye Hong-Gang, Chen Guang-De, Zhu You-Zhang, Zhang Jun-Wu. First principle study of the native defects in hexagonal aluminum nitride. Acta Physica Sinica,
2007, 56(9): 5376-5381.
doi: 10.7498/aps.56.5376
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Ye Fan, Cai Xing-Min, Wang Xiao-Ming, Zhao Jian-Guo, Xie Er-Qing. Low pressure chemical vapor deposition synthesis of InN nanowires and their field electron emission. Acta Physica Sinica,
2007, 56(4): 2342-2346.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Liu Bin, Zhu Shun-Ming, Zhao Hong, Pu Lin, Han Ping, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. The oxidation characteristics of InN films. Acta Physica Sinica,
2007, 56(2): 1032-1035.
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Wang Rui-Min, Chen Guang-De, Zhu You-Zhang. Micro-Raman scattering study of hexagonal InGaN epitaxial layer. Acta Physica Sinica,
2006, 55(2): 914-919.
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WANG ZHEN-XIA, YU GUO-QING, RUAN MEI-LING, ZHU FU-YING, ZHU DE-ZHANG, PAN HAO-CHANG, XU HONG-JIE. STUDIES OF HEXAGONAL DIAMOND OF NANO-GRAIN IN GRAPHITE SURFACE PRODUCED BY Ar+ ION BOMBARDMENT. Acta Physica Sinica,
2000, 49(8): 1524-1527.
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN. EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica,
2000, 49(6): 1132-1135.
doi: 10.7498/aps.49.1132
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