Fe3O4薄膜的电输运及光诱导特性研究

罗炳成; 陈长乐; 谢廉

doi:10.7498/aps.60.027306

摘要

用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe3O4薄膜.电阻-温度关系表明Fe3O4薄膜的Verwey转变(TV)约在122 K,低温段(TTV)输运特征满足Mott变程跳跃模型,高温段(T>TV)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe3O4薄膜的光致电阻率变化主要与激光激发t2g电子的转移有关.

关键词:

Abstract

Highly oriented Fe3O4 film was fabricated on Si (111) substrate by pulsed laser deposition. The resistivity-temperature curve shows that the Verwey transition point is about 122 K, and the electrical transport mechanism agrees with Mott varial-range hopping model and the small polaron model for temperatures below TV and above TV, repectively. The laser irradiation results in the decrease of the resistivity of the film in the whole temperature range were measured, which is attributed to the intersite transitions of Fe 3d t2g electrons.

Keywords:

作者及机构信息

1.
西北工业大学凝聚态物质与结构陕西省重点实验室,西安 710029

基金项目: 国家自然科学基金(批准号:60171034,61078057)和西北工业大学基础研究基金(批准号:NPU-FFR-JC200821,JC201048)资助的课题.

Authors and contacts

1.
Key Laboratory of Condensed Matter Structural and Properties of Shaanxi Province, Northwestern Polytechnical University, Xi' an 710029, China

参考文献

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施引文献

[1]	Zutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[2]	Dowben P A, Skomski R 2004 J. Appl. Phys. 95 7453
[3]	Ren S K, Zhang F M, Du Y W 2004 Progress in Physics 24 381 [任尚坤、张凤鸣、都有为2004物理学进展24 381]
[4]	Li D F, Shi J R 2009 Chin. Phys. B 18 282
[5]	Zheng K H, Liu Z, Liu J, Hu L J, Wang D W, Chen C Y, Sun L F 2010 Chin. Phys. B 19 026101
[6]	Fonin M, Pentcheva R, Dadkov Yu S, Sperlich M, Vyalikh D V, Scheffler M, Rudiger U, Guntherodt G 2005 Phys. Rev. B 72 104436
[7]	Alexe M, Ziese M, Hesse D, Esquinazi P, Yamauchi K, Fukushima T, Picozzi S, Gosele U 2009 Adv. Mater. 21 4452
[8]	Cheng Y H, Liu H, Li H B, Zheng R K, Ringer S P 2009 J. Phys. D: Appl.Phys. 42 215004
[9]	Eerenstein W, Palstra T T M, Saxena S S, Hibma T 2002 Phys. Rev. Lett. 88 247204
[10]	Kim-Ngan N T H, Balogh A G, Meyer J D, Brotz J, Zajac M, Slezak T, Korecki J 2009 Surf. Sci. 603 1175
[11]	Arora S K, Wu H C, Choudhary R J, Shvets I V, Mryasov O N, Yao H Z, Ching W Y 2008 Phys. Rev. B 77 134443
[12]	Margulies D T, Parker F T, Spada F E, Goldman R S, Li J, Sinclair R, Berkowitz A E 1996 Phys. Rev. B 53 9175
[13]	Tang J K, Wang K Y, Zhou W L 2001 J. Appl. Phys. 89 7690
[14]	Jain S, Adeyeyea A O, Boothroyd C B 2005 J. Appl. Phys. 97 093713
[15]	Tiwari S, Choudhary R J, Ran P, Phase D M 2007 J. Phys.: Condens. Matter 19 176002; Shailja T, Ram P, Choudhary R J, Phase D M 2007 J. Phys.D: Appl.Phys. 40 4943
[16]	Wang S L, Chen C L, Wang Y L, Jin K X, Wang Y C, Ren R, Song Z M, Yuan X 2004 Acta Phys. Sin. 53 587 (in Chinese)[汪世林、陈长乐、王跃龙、金克新、王永仓、任韧、宋宙模、袁孝2004 53 587]
[17]	Yan Z J, Yuan X, Gao G M, Luo B C, Jin K X, Chen C L 2007 Chin. Phys. Lett. 24 1397
[18]	Yamashita T, Hayes P 2008 Appl. Surf. Sci. 254 2441
[19]	Liu H, Jiang E Y, Zheng R K, Bai H L 2003 J. Phys.:Condens. Matter 15 8003
[20]	Bollero A, Ziese M, Hohne R, Semmelhack H C, Kohler U, Seter A, Esquinazi P 2005 J. Magn. Magn. Mater. 285 279
[21]	Ziese M, Srinitiwarawong C 1998 Phys. Rev. B 58 11519
[22]	Gong G Q, Gupta A, Xiao G, Qian W, Dravid V P 1997 Phys. Rev. B 56 5096
[23]	Ihle D, Lorenz B 1986 J. Phys.C: Solid State Phys. 19 5239
[24]	Ramos R, Arora S K, Shvets I V 2008 Phys. Rev. B 78 214402
[25]	Tang J, Chen C L, Jin K X, Zhao S G 2008 Acta Phys. Sin. 57 1166 (in Chinese)[唐晶、陈长乐、金克新、赵省贵 2008 57 1166]
[26]	Fontijn W F J, van der Zaag P J, Devillers M A C, Brabers V A M, Metselaar R 1997 Phys. Rev. B 56 5432
[27]	Park S K, Ishikawa T, Tokura Y 1998 Phys. Rev. B 58 3717

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