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(1)烟台大学应用化学系,烟台264005; (2)烟台师范学院物理系,烟台264025; (3)中国科学院微电子研究和发展中心,北京100010; (4)中国科学院物理研究所,北京100080
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[1] Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai. Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103. doi: 10.7498/aps.64.148103 [2] Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei. Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701. doi: 10.7498/aps.61.247701 [3] Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming. Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101. doi: 10.7498/aps.61.198101 [4] Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637. doi: 10.7498/aps.59.1632 [5] Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong. Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study. Acta Physica Sinica, 2009, 58(12): 8612-8616. doi: 10.7498/aps.58.8612 [6] Wei Wei, Liu Ming, Qu Sheng-Wei, Zhang Qing-Yu. Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates. Acta Physica Sinica, 2009, 58(8): 5736-5743. doi: 10.7498/aps.58.5736 [7] Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua. Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178. doi: 10.7498/aps.57.2174 [8] Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica, 2008, 57(4): 2562-2566. doi: 10.7498/aps.57.2562 [9] Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493. doi: 10.7498/aps.55.5487 [10] Fu Shi-Liu, Dai Jun, Ding Qiu-Ke, Zhao Wei-Ren. Investigation of the spectra of Sr2CeO4 due to charge transfer transition. Acta Physica Sinica, 2005, 54(5): 2369-2373. doi: 10.7498/aps.54.2369 [11] Li Shan-Feng, Zhang Qing-Yu. Absorption and photoluminescence properties Er/Yb co-doped soda-silicate glasses. Acta Physica Sinica, 2005, 54(11): 5462-5467. doi: 10.7498/aps.54.5462 [12] Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang. Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica, 2004, 53(9): 2910-2914. doi: 10.7498/aps.53.2910 [13] Zhou Jian-Ping, Chen Nuo-Fu, Song Shu-Lin, Chai Chun-Lin, Yang Shao-Yan, Liu Zhi-Kai, Lin Lan-Ying. Magnetic properties and rectifying behaviour of silicon doped with gadolinium. Acta Physica Sinica, 2003, 52(6): 1469-1473. doi: 10.7498/aps.52.1469 [14] . . Acta Physica Sinica, 2000, 49(2): 383-388. doi: 10.7498/aps.49.383 [15] TONG SONG, LIU XIANG-NA, GAO TING, YIN HAO, CHEN YI-JUN, BAO XI-MAO. INTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS. Acta Physica Sinica, 1999, 48(2): 378-384. doi: 10.7498/aps.48.378 [16] MA ZHI-XUN, LIAO XIAN-BO, HE JIE, CHENG WEN-CHAO, YUE GUO-ZHEN, WANG YONG-QIAN, DIAO HONG-WEI, KONG GUANG-LIN. ANNEALING BEHAVIORS OF PHOTOLUMINESCENCE FROM SiOx∶H FILMS. Acta Physica Sinica, 1998, 47(6): 1033-1040. doi: 10.7498/aps.47.1033 [17] ZHANG BAI-XIN, ZHANG LI-ZHU, SONG HAI-ZHI, YAO GUANG-QING, DUAN JIA-DI, TAO GUO-QIANG. PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION. Acta Physica Sinica, 1995, 44(11): 1825-1830. doi: 10.7498/aps.44.1825 [18] . X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED W-Si FILMS ON S10_2_. Acta Physica Sinica, 1989, 38(8): 1379-1383. doi: 10.7498/aps.38.1379 [19] FAN YONG-NIAN, YE HENG-QIANG. ORDERED STRUCTURE FORMED ON Mo(lll) SURFACE BY BOMBARDMENT OF NITROGEN IONS AND ANNEALING. Acta Physica Sinica, 1986, 35(5): 672-676. doi: 10.7498/aps.35.672 [20] XIA RI-YUAN. IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576. doi: 10.7498/aps.29.566
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Publishing process
- Received Date:
21 March 1994
- Published Online:
05 March 1995
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