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2012, 61(4): 046802.
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2011, 60(2): 028101.
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2010, 59(1): 636-642.
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2009, 58(11): 7765-7772.
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2008, 57(8): 5277-5283.
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1996, 45(4): 647-654.
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1991, 40(6): 962-968.
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1991, 40(11): 1827-1832.
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1990, 39(12): 1959-1964.
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JIANG WEI-DONG, FAN YONG-LIANG, SHENG CHI, YU MING-REN. ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE. Acta Physica Sinica,
1990, 39(9): 1429-1434.
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CHEN KE-MING, ZHOU TIE-CHENG, FAN YONG-LIANG, SHENG CHI, YU MING-REN. THE EFFECT OF ELECTRON DIFFRACTION CONDITIONS ON RHEED INTENSITY OSCILLATIONS DURING Si(111) MBE. Acta Physica Sinica,
1990, 39(12): 1937-1944.
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1990, 39(12): 1945-1951.
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1990, 39(3): 408-415.
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1990, 39(2): 237-244.
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. INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1989, 38(8): 1265-1270.
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(10): 1607-1612.
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