| [1] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica,
2016, 65(12): 127401.
doi: 10.7498/aps.65.127401
|
| [2] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
| [3] |
Yu Cui, Li Jia, Liu Qing-Bin, Cai Shu-Jun, Feng Zhi-Hong. Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001). Acta Physica Sinica,
2014, 63(3): 038102.
doi: 10.7498/aps.63.038102
|
| [4] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2013, 62(5): 058101.
doi: 10.7498/aps.62.058101
|
| [5] |
Weng Yong-Chao, Kuang Long-Yu, Gao Nan, Cao Lei-Feng, Zhu Xiao-Li, Wang Xiao-Hua, Xie Chang-Qing. Reflection type single-order diffraction grating. Acta Physica Sinica,
2012, 61(15): 154203.
doi: 10.7498/aps.61.154203
|
| [6] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
| [7] |
Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong. Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica,
2011, 60(1): 016109.
doi: 10.7498/aps.60.016109
|
| [8] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
| [9] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin. Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica,
2008, 57(2): 1236-1240.
doi: 10.7498/aps.57.1236
|
| [10] |
Wei Xian-Hua, Zhang Ying, Li Jin-Long, Deng Xin-Wu, Liu Xing-Zhao, Jiang Shu-Wen, Zhu Jun, Li Yan-Rong. Analysis of reflection high-energy electron diffraction pattern during SrTiO3 homoepitaxy. Acta Physica Sinica,
2005, 54(1): 217-220.
doi: 10.7498/aps.54.217
|
| [11] |
Chen Ying-Fei, Peng Wei, Li Jie, Chen Ke, Zhu Xiao-Hong, Wang Ping, Zeng Guang, Zheng Dong-Ning, Li Lin. In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction. Acta Physica Sinica,
2003, 52(10): 2601-2606.
doi: 10.7498/aps.52.2601
|
| [12] |
KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA. THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND Si. Acta Physica Sinica,
1999, 48(11): 2104-2109.
doi: 10.7498/aps.48.2104
|
| [13] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING. Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica,
1996, 45(4): 647-654.
doi: 10.7498/aps.45.647
|
| [14] |
HU FU-YI, LI AI-ZHEN. RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica,
1991, 40(6): 962-968.
doi: 10.7498/aps.40.962
|
| [15] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng. MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica,
1991, 40(7): 1121-1128.
doi: 10.7498/aps.40.1121
|
| [16] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU, YU MING-REN. PHASE-LOCKED EPITAXY OF Ge/Si SUPERLATTICES BY USING RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica,
1990, 39(3): 408-415.
doi: 10.7498/aps.39.408
|
| [17] |
JIANG WEI-DONG, FAN YONG-LIANG, SHENG CHI, YU MING-REN. ELIMINATION OF P SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si ON GaP (111) SUBSTRATE. Acta Physica Sinica,
1990, 39(9): 1429-1434.
doi: 10.7498/aps.39.1429
|
| [18] |
CHEN KE-MING, ZHOU TIE-CHENG, FAN YONG-LIANG, SHENG CHI, YU MING-REN. THE EFFECT OF ELECTRON DIFFRACTION CONDITIONS ON RHEED INTENSITY OSCILLATIONS DURING Si(111) MBE. Acta Physica Sinica,
1990, 39(12): 1937-1944.
doi: 10.7498/aps.39.1937
|
| [19] |
JIN GAO-LONG, CHEN KE-MING, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU. OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH. Acta Physica Sinica,
1989, 38(3): 394-398.
doi: 10.7498/aps.38.394
|
| [20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG. LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica,
1988, 37(10): 1607-1612.
doi: 10.7498/aps.37.1607
|
下载:
