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The effects of deuteration and helium-implantation on the surface morphology and phase structure of scandium (Sc) thick film are investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) methods. The preferred orientation of (002) crystal plane is observed for both films deposited on substrates of monocrystalline-silicon and polished-molybdenum. A great number of holes appear on surface after deuteration and the grain size of ScD2 is bigger than that of Sc, whereas a few ScD0.33/Sc grains with relatively small grain size retain inside crystal. The surface morphologies of scandium and scandium deuteride films are slightly affected by helium-implantation. The formation of helium bubbles with a preferred orientation in the crystal lattice of scandium and scandium deuteride, generated by the aggregation of ion-implanted helium, causes the corresponding diffraction peaks of scandium and scandium deuteride phase to shift towards smaller angles.
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Keywords:
- scandium film /
- deuteration /
- helium-implantation /
- surface morphology
[1] Dow P A, Briers G W, Dewey M A P, Stark D S 1968 Nucl. Instrum. Methods 60 293
[2] Ohmura A, Machida A, Watanuki T, Aoki K, Nakano S, Takemura K 2007 J. Alloys Compd. 446-447 598
[3] Snow C S, Mattsson T 2008 Sandia National Laboratories Report USA
[4] Bing W Z, Long X G, Zhu Z L, Hao W L, Luo S Z, Peng S M 2010 Chin. J. Inorg. Chem. 26 1008 (in Chinese) [邴文增, 龙兴贵, 朱祖良, 郝万立, 罗顺忠, 彭述明 2010 无机化学学报 26 1008]
[5] Kass W J 1977 J. Vac. Sci. Technol. A 14 518
[6] Blewer R S, Maurin J K 1972 J. Nucl. Mater. 44 260
[7] Barnes R B 1965 Nature 206 1307
[8] Mcguire J C, Kempter C P 1960 J. Chem. Phys: Letters to the Editor 33 1584
[9] Prem M, Krexner G, Pleschiutschnig J 2003 J. Alloys Compd. 356-357 683
[10] Miyamoto M, Nishijima D, Ueda Y, Doerner R P, Kurishita H, Baldwin M J, Morito S, Ono K, Hanna J 2009 Nucl. Fusion 49 065035
[11] Azarkh Z M, Funin V N 1965 Sov. Phys. Crystallogr. 10 21
[12] Saitoh H, Machida A, Katayama Y, Aoki K 2010 J. Appl. Phys. 108 063516
[13] Parish C M, Snow C S, Kammler D R, Brewer L N 2010 J. Nucl. Mater. 403 191
[14] Zhou X S, Long X G, Zhang L, Peng S M, Luo S Z 2010 J. Nucl. Mater. 396 223
[15] Snow C S, Brewer L N, Gelles D S 2008 J. Nucl. Mater. 374 147
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[1] Dow P A, Briers G W, Dewey M A P, Stark D S 1968 Nucl. Instrum. Methods 60 293
[2] Ohmura A, Machida A, Watanuki T, Aoki K, Nakano S, Takemura K 2007 J. Alloys Compd. 446-447 598
[3] Snow C S, Mattsson T 2008 Sandia National Laboratories Report USA
[4] Bing W Z, Long X G, Zhu Z L, Hao W L, Luo S Z, Peng S M 2010 Chin. J. Inorg. Chem. 26 1008 (in Chinese) [邴文增, 龙兴贵, 朱祖良, 郝万立, 罗顺忠, 彭述明 2010 无机化学学报 26 1008]
[5] Kass W J 1977 J. Vac. Sci. Technol. A 14 518
[6] Blewer R S, Maurin J K 1972 J. Nucl. Mater. 44 260
[7] Barnes R B 1965 Nature 206 1307
[8] Mcguire J C, Kempter C P 1960 J. Chem. Phys: Letters to the Editor 33 1584
[9] Prem M, Krexner G, Pleschiutschnig J 2003 J. Alloys Compd. 356-357 683
[10] Miyamoto M, Nishijima D, Ueda Y, Doerner R P, Kurishita H, Baldwin M J, Morito S, Ono K, Hanna J 2009 Nucl. Fusion 49 065035
[11] Azarkh Z M, Funin V N 1965 Sov. Phys. Crystallogr. 10 21
[12] Saitoh H, Machida A, Katayama Y, Aoki K 2010 J. Appl. Phys. 108 063516
[13] Parish C M, Snow C S, Kammler D R, Brewer L N 2010 J. Nucl. Mater. 403 191
[14] Zhou X S, Long X G, Zhang L, Peng S M, Luo S Z 2010 J. Nucl. Mater. 396 223
[15] Snow C S, Brewer L N, Gelles D S 2008 J. Nucl. Mater. 374 147
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