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NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY

PENG CHENG SHENG CHI SUN HENG-HUI

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NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY

PENG CHENG, SHENG CHI, SUN HENG-HUI
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(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

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  • Abstract views:  6555
  • PDF Downloads:  455
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Publishing process
  • Received Date:  20 July 1987
  • Published Online:  05 March 1988

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