| [1] |
Zhao Yu, Wei Ai-Xiang, Liu Jun. Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance. Acta Physica Sinica,
2015, 64(11): 118501.
doi: 10.7498/aps.64.118501
|
| [2] |
Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
doi: 10.7498/aps.64.107801
|
| [3] |
Wang Tian-Shu, Zhang Rui-De, Guan Zhe, Ba Ke, Zu Yun-Xiao. Properties of memristor in RLC circuit and diode circuit. Acta Physica Sinica,
2014, 63(17): 178101.
doi: 10.7498/aps.63.178101
|
| [4] |
Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou. Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica,
2014, 63(12): 127201.
doi: 10.7498/aps.63.127201
|
| [5] |
Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu. Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica,
2011, 60(8): 087206.
doi: 10.7498/aps.60.087206
|
| [6] |
Liu Jing-Wang, Du Zhen-Hui, Li Jin-Yi, Qi Ru-Bin, Xu Ke-Xin. Analytical model for the tuning characteristics of static, dynamic, and transient behaviors in temperature and injection current of DFB laser diodes. Acta Physica Sinica,
2011, 60(7): 074213.
doi: 10.7498/aps.60.074213
|
| [7] |
Fan Guo-Li, Jiang Yue-Song, Liu Li, Li Fang. Analysis on high frequency performance of THz GaAs Schottky mixer diode. Acta Physica Sinica,
2010, 59(8): 5374-5381.
doi: 10.7498/aps.59.5374
|
| [8] |
Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
2010, 59(2): 1233-1236.
doi: 10.7498/aps.59.1233
|
| [9] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
doi: 10.7498/aps.58.7189
|
| [10] |
Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica,
2008, 57(2): 1220-1223.
doi: 10.7498/aps.57.1220
|
| [11] |
Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei. Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica,
2008, 57(2): 1141-1144.
doi: 10.7498/aps.57.1141
|
| [12] |
Sun Ke-Xu, Jiang Shao-En, Yi Rong-Qing, Cui Yan-Li, Ding Yong-Kun, Liu Shen-Ye. Research on time characteristics of soft X-ray diode. Acta Physica Sinica,
2006, 55(1): 68-75.
doi: 10.7498/aps.55.68
|
| [13] |
Liu Ming, Liu Hong, He Yu-Ｌiang. The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica,
2003, 52(11): 2875-2878.
doi: 10.7498/aps.52.2875
|
| [14] |
LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
2001, 50(2): 262-267.
doi: 10.7498/aps.50.262
|
| [15] |
LI HONG-WEI, WANG TAI-HONG. THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica,
2001, 50(12): 2501-2505.
doi: 10.7498/aps.50.2501
|
| [16] |
YI MING-GUANG. TRIGGERED OSCILLATION IN TUNNEL DIODE CIRCUITS WITH NON-LINEAR BIAS. Acta Physica Sinica,
1974, 23(5): 23-42.
doi: 10.7498/aps.23.23
|
| [17] |
. . Acta Physica Sinica,
1965, 21(9): 1697-1699.
doi: 10.7498/aps.21.1697
|
| [18] |
WU SHIH-CHIU. A GRAPHICAL ANALYSIS FOR NONLINEAR SYSTEMS WITH APPLICATIONS IN TUNNEL-DIODE CIRCUITS. Acta Physica Sinica,
1964, 20(8): 731-752.
doi: 10.7498/aps.20.731
|
| [19] |
HSU YUAN-HUA. HARMONIC ANALYSER FOR MEASURING THE FIRST AND SECOND DERIVATIVES OF I-V CHARACTERISTICS OF TUNNEL DIODES AND POINT CONTACT DIODES. Acta Physica Sinica,
1964, 20(9): 919-927.
doi: 10.7498/aps.20.919
|
| [20] |
SEN HSUEH-CHU, CHEN NING-CHIANG. PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF GERMANIUM ESAKI DIODES. Acta Physica Sinica,
1964, 20(10): 1019-1026.
doi: 10.7498/aps.20.1019
|
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