InAlAs/GaSbAs/InP DHBT与InP/GaSbAs/InP DHBT性能比较分析

周守利; 杨万春; 任宏亮; 李伽

doi:10.7498/aps.61.128501

摘要

双异质结双极晶体管(DHBT)的性能与发射区-基区(E-B) 异质结和基区-集电区(B-C)异质结的能带突变类型关系密切, 本文基于热场发射-扩散模型, 对两类不同能带结构类型的新型DHBT的性能做了比较分析. 结论表明: 与作为当今研究热点的E-B和B-C异质结构均为全交错II型能带结构的InP/GaSbAs/InP DHBT的性能相比, E-B异质结采用传统I型、B-C异质结采用交错II型的一类新型能带结构的InAlAs/GaSbAs/InP DHBT虽然在开启电压上更高, 但具有更好的电流驱动能力、直流增益和高频性能.

关键词:

Abstract

The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-field-diffusion model, the comparisons are made of the DC and the RF characteristics between two novel HBTs, that is, InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT, of which the former has a type-I E-B junction and a type-II B-C junction and the later has a type-II E-B junction and a type-II B-C junction. The simulation results show that DHBT with a type-I E-B junction and a type-II B-C junction has much better current driving capability, DC gain and RF performance, although it has a slightly high turn-on voltage.

Keywords:

作者及机构信息

1.
浙江工业大学信息工程学院, 杭州 310032;

2.
中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050;

3.
湘潭大学信息工程学院, 湘潭 411105

基金项目: 信息功能材料国家重点实验室2009开放基金项目(批准号: FMI2009-08), 湖南省教育厅项目(批准号: 09C959)和湖南省科技厅项目(批准号: 2010TY2003)资助的课题.

Authors and contacts

1.
College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China;

2.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

3.
College of Information Engineering, Xiangtan University, Xiangtan 411105, China

Funds: Project supported by the Open Fund of State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (Grant No. FMI2009-08), the Hunan Province Education Department (Grant No. 09C959), and the Hunan Provincial Science and Technology Department (Grant No. 2010TY2003).

参考文献

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施引文献

[1]	Qin Z H, Li X J 2009 Semiconductor Technology 34 721 (in Chinese) [齐志华, 李献杰 2009 半导体技术 34 721]
[2]	Bolognesi C R, Dvorak M M W, Yeo P, Xu X G, Watkins S P 2001 IEEE Transactions on Electron Devices 48 2631
[3]	Lye B C, Houlston P A, Yow H K, Button C C 1998 IEEE Trans Electron Devices 45 2417
[4]	Lovblom R, Fluckiger R, Zeng Yuping, Ostinelli O, Alt A R, Benedickter H, Bolognesi C R 2011 IEEE Electron Device Letters 32 629
[5]	Teppati V, Zeng Yuping, Ostinelli O, Bolognesi C R 2011 IEEE Electron Device Letters 32 886
[6]	Chang Y H, Syu R H 2010 Microelectronics Reliability 50 70
[7]	Zeng Y P, Ostinelli O, Liu H G, Bolognesi C R 2008 Solid-State Electronics 52 1202
[8]	Tao N G, Liu H G, Bolognesi C R 2007 Solid-State Electronics 51 995
[9]	Pana C T, Wanga C M, Hsina Y M, Zhub H J, Kuob J M, Kaob Y C 2009 Solid-State Electronics 53 574
[10]	Garcia-Loureiro A J, Lopez-Gonzalez J M 2004 International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17 29
[11]	Yang K, East J R, Haddad H I 1993 Solid-State Electron 36 321
[12]	Zhou S L, Ren X M 2008 Chinese Journal of Semiconductors 29 741 (in Chinese) [周守利, 任晓敏 2008 半导体学报 29 741]
[13]	J M Lopez 1997 IEEE Trans. Electron Devices 44 1046
[14]	Zhou S L, Cui H L, Huang Y Q, Ren X M 2006 Chinese Journal of Semiconductors 27 110 (in Chinese) [周守利, 崔海林, 黄永清, 任晓敏 2006 半导体学报 27 110]
[15]	Zhou S L, Huang H, Huang Y Q, Ren X M 2007 Acta Physica Sinica 56 2890 (in Chinese) [周守利, 黄辉, 黄永清, 任晓敏 2007 56 2890]
[16]	Lee J M, Lee T W, Park S H, Minb B G, Parkb M P, Leeb KH, Choia I H 2001 Mater. Sci. Engineering B 79 63
[17]	Yi C G, Kim T H, Brown A S 2002 Journal of Electronic Materials 31 95
[18]	Oon Sim Ang 1990 MS Thesis (Vancouver of Canada: The University of British Columbia)
[19]	Yi C H 2002 Ph. D. Dissertation (Atlanta of USA: Georgia Institute of Technology)
[20]	Gao G B, Fan Z F, Morkoc H 1992 Appl. Phys. Lett. 61 198

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